US5384683A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Intelligent power device module
Assignee: Toshiba Corp
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Filing: 1992-11-05
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Granted: 1995-01-24
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Expires: 2012-11-05
Abstract
Abstract In a semiconductor device module of this invention, on a metal base is formed a metal layer, on which an insulating substrate is formed. On the insulating substrate is formed conducting film patterns, to which a power device and a control device for controlling the power device are electrically connected. The metal layer exists only between the insulating substrate and the base under the power device, whereas a space is provided between the insulating substrate and the base under the control device, and is filled with air.
Inventors
- 👤 Tetsujiro Tsunoda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:54
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/601; H10W70/00; H10W70/60; H10W70/611; H10W70/62; H10W70/65; H10W76/00; H10W76/40; H10W76/42; H10W90/00
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
135 words
A semiconductor device module comprising: an electrically conductive base having a main surface; an electrically insulative substrate provided on said main surface of said base; electric wiring patterns formed on said substrate; a power device electrically connected to said electric wiring patterns; a control device electrically connected to said electric wiring patterns, for controlling said power device; and capacitance-reducing means for reducing a capactiance between said control device and said base; wherein said control device and base constitute a first coupling capacitor having a first dielectric layer which has a first dielectric constant and a second capacitor having a second dielectric layer which has a second dielectric constant, and said capacitance-reducing means includes said first dielectric constant being less than said second dielectric constant to reduce the capacitance between said control device and said base.
Claim 2
Dependent Claim
135 words
A semiconductor device module comprising: an electrically conductive base having a main surface; an electrically insulative substrate provided on said main surface of said base; electric wiring patterns formed on said substrate; a power device electrically connected to said electric wiring patterns; a control device electrically connected to said electric wiring patterns, for controlling said power device; and capacitance-reducing means for reducing a capactiance between said control device and said base; wherein said control device and base constitute a first coupling capacitor having a first dielectric layer which has a first dielectric constant and a second capacitor having a second dielectric layer which has a second dielectric constant, and said capacitance-reducing means includes said first dielectric constant being less than said second dielectric constant to reduce the capacitance between said control device and said base.
Claim 3
Dependent Claim
34 words
A semiconductor device module according to claim 1, wherein said capacitance-reducing means makes said first dielectric layer thicker than said second dielectric layer, to reduce the capacitance between said control device-means and said base.
Claim 4
Dependent Claim
32 words
A semiconductor device module according to claim 2, wherein said first dielectric layer comprises part of said substrate and a space, and said second dielectric layer comprises another part of said substrate.
Claim 5
Dependent Claim
20 words
A semiconductor device module according to claim 3, further comprising: a bonding layer for bonding said substrate to said base.
Claim 6
Dependent Claim
15 words
A semiconductor device module according to claim 4, wherein said bonding layer is electrically conductive.
Claim 7
Dependent Claim
29 words
A semiconductor device module according to claim 5, wherein said bonding layer is provided between said substrate and said base under a portion where said power device is formed.
Claim 8
Dependent Claim
15 words
A semiconductor device module according to claim 6, wherein said substrate comprises a ceramic board.
Claim 9
Dependent Claim
22 words
A semiconductor device module according to claim 7, wherein said ceramic board is formed of one of alumina, aluminum nitride and beryllia.
Claim 10
Dependent Claim
17 words
A semiconductor device module according to claim 1, wherein said electric wiring patterns comprise electrically conductive films.
Claim 11
Dependent Claim
17 words
A semiconductor device module according to claim 9, wherein said electrically conductive films are formed of copper.
Claim 12
Dependent Claim
21 words
A semiconductor device module according to claim 1, wherein said base is formed of metal and is electrically and thermally conductive.
Claim 13
Dependent Claim
26 words
A semiconductor device module according to claim 1, wherein said power device comprises a plurality of semiconductor chips and said control device comprises a semiconductor chip.
Claim 14
Dependent Claim
15 words
A semiconductor device module according to claim 3, wherein said space is filled with gas.
Claim 15
Dependent Claim
13 words
A semiconductor device module according to claim 13, wherein said gas is air.
Claim 16
Dependent Claim
21 words
A semiconductor device module according to claim 5, wherein said bonding layer is formed of an electrically and thermally conductive metal.
Claim 17
Dependent Claim
13 words
A semiconductor device module according to claim 15, wherein said metal is copper.
Claim 18
Dependent Claim
29 words
A semiconductor device module according to claim 16, wherein said bonding layer is divided into a plurality of portions, and provided between said insulating substrate and said metal base.
Claim 19
Dependent Claim
19 words
A semiconductor device module according to claim 16, wherein said base has a recessed portion under said control device.
Claim 20
Dependent Claim
21 words
A semiconductor device module according to claim 16, wherein said base has a cutaway portion in it under said control device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-23 | 1998-07-25 | 1999-01-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-23 | 2002-07-25 | 2003-01-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-23 | 2006-07-25 | 2007-01-24 | $7700.00 | Window Closed / Lapsed |