Mask ROM process

Claim 2

A semiconductor ROM device comprising a first conductivity type layer on one surface of a semiconductor substrate, a gate oxide layer formed on the surface of said substrate, a first set of conductive structures consisting essentially of polysilicon formed on said gate oxide layer with a plurality of buried bit lines in said substrate beneath said gate oxide layer implanted between said polysilicon structures with channel regions between said buried bit lines, insulating structures above said buried bit lines between said first set of conductive structures and in contact therewith, a second conductive structure consisting essentially of polysilicon formed on the remaining structure on said workpiece, said second conductive structure extending down into electrical contact with said first conductive structures above said channel regions, a ROM code implant formed in said substrate in said channel below said first conductive layer beneath the space between the surfaces of said second conductive structure where said second conductive structure extends between said insulating structures.

Claim 3

The device of claim 1 wherein said first conductive structure is patterned into segments, said insulating structures formed on the surface of said gate oxide layer above said channel, and said second conductive structure formed over the top of said first conductive structure and said insulating structures in electrical contact with said first conductive structure.

Claim 4

The device of claim 1 wherein said first conductive structure is patterned into segments, sidewall spacers formed against the sidewalls of said insulating structures over said first conductive structures, and said second structure is formed over the top of said first conductive structure and said spacers.

Claim 5

The device of claim 3 with a sidewall structure formed adjacent to said insulating structure beneath said second conductive structure.

Claim 6

A device in accordance with claim 1 wherein said first conductive structure have a thickness of about 500 Å.

Claim 7

A device in accordance with claim 1 wherein said second conductive structure has a thickness between about 2000 Å about 4000 Å.

Claim 8

A device in accordance with claim 5 wherein said second conductive structure has a thickness between about 2000 Å about 4000 Å.

Claim 9

The device of claim 2 wherein said first conductive structure is patterned into segments, sidewall spacers formed against the sidewalls of said silicon dioxide structures over said first conductive structures, and said second structure is formed over the top of said first conductive structure and said spacers.

Claim 10

The device of claim 8 with a sidewall structure formed adjacent to said insulating structure beneath said second conductive structure.

Claim 11

A device in accordance with claim 9 wherein said first conductive structures have a thickness of about 500 Å.

Claim 12

A device in accordance with claim 10 wherein said second conductive structure has a thickness between about 2000 Å about 4000 Å.

Claim 13

A device in accordance with claim 10 wherein said insulating structures comprise silicon dioxide.

Claim 14

A device in accordance with claim 10 wherein said insulating structures comprise photoresist.

Claim 15

A device in accordance with claim 10 wherein said insulating structures comprise spin on glass.

Claim 16

A device in accordance with claim 10 wherein said insulating structures comprise CVD silicon dioxide.

Claim 17

A device in accordance with claim 13 with said said buried bit lines being formed of arsenic dopant implanted with a dose of between about 1×10 15 /cm 2 and about 3×10 15 /cm 2 implanted between a first set of conductive structures, with channel regions between said buried bit lines.

Claim 18

A device in accordance with claim 14 with said said buried bit lines being formed of arsenic dopant implanted with a dose of between about 1×10 15 /cm 2 and about 3×10 15 /cm 2 implanted between a first set of conductive structures, with channel regions between said buried bit lines.

Claim 19

A device in accordance with claim 15 with said said buried bit lines being formed of arsenic dopant implanted with a dose of between about 1×10 15 /cm 2 and about 3×10 15 /cm 2 implanted between a first set of conductive structures, with channel regions between said buried bit lines.

Claim 20

A semiconductor ROM device comprising a first conductivity type layer on a semiconductor substrate, a gate oxide layer on the surface of said substrate having a thickness of about 200 Å, a first conductive polysilicon structure formed on said gate oxide layer, said first conductive structure having a thickness of about 500 Å formed with parallel stripes, a plurality of buried bit lines in said substrate beneath said gate oxide layer said buried bit lines implanted between said parallel stripes of polysilicon with channel regions between said buried bit lines, an insulating structure having a thickness of about 5000 Å formed over said buried bit lines in contact with said gate oxide layer, a silicon nitride spacer structure formed over said first conductive structure adjacent to said insulating structure, a second conductive, polysilicon structure in electrical contact with said first conductive structure formed on the remaining structure on said workpiece said second conductive structure having a thickness between about 2000 Å about 4000 Å, and a ROM code implant formed in said substrate in said channel below said first conductive layer beneath the space between the surfaces of said second conductive structure where said second conductive structure extends between said spacers and said insulating structures.

Claim 21

A semiconductor ROM device comprising a first conductivity type layer on a semiconductor substrate, a gate oxide layer on the surface of said substrate having a thickness of about 200 Å, a first conductive polysilicon structure formed on said gate oxide layer, said first conductive structure having a thickness of about 500 Å formed with parallel stripes, a plurality of buried bit lines in said substrate beneath said gate oxide layer said buried bit lines implanted between said parallel stripes of polysilicon with channel regions between said buried bit lines, an insulating structure having a thickness of about 5000 Å formed over said buried bit lines in contact with said gate oxide layer, a silicon nitride spacer structure formed over said first conductive structure adjacent to said insulating structure, a second conductive, polysilicon structure in electrical contact with said first conductive structure formed on the remaining structure on said workpiece said second conductive structure having a thickness between about 2000 Å about 4000 Å, and a ROM code implant formed in said substrate in said channel below said first conductive layer beneath the space between the surfaces of said second conductive structure where said second conductive structure extends between said spacers and said insulating structures.

Claim 22

A semiconductor Mask ROM device comprising a first conductivity type layer on a semiconductor substrate, a gate oxide layer on the surface of said substrate having a thickness of about 200 Å, a first conductive polysilicon structure formed on said gate oxide layer, said first conductive structure having a thickness of about 500 Å formed with parallel stripes, a plurality of buried bit lines in said substrate beneath said gate oxide layer said buried bit lines being formed of arsenic dopant implanted with a dose of between about 1×10 15 /cm 2 and about 3×10 15 /cm 2 implanted between said parallel stripes of polysilicon with channel regions between said buried bit lines, a silicon dioxide structure having a thickness of about 5000 Å formed over said buried bit lines in contact with said gate oxide layer, a silicon nitride spacer structure formed over said first conductive structure adjacent to said silicon dioxide structures, a second conductive, polysilicon word line structure in electrical contact with said first conductive structure formed on the remaining structure on said workpiece said second conductive structure having a thickness between about 2000 Å about 4000 Å, and a ROM code implant formed in said substrate in said channel below said first conductive layer beneath the space between the surfaces of said second conductive structure where said second conductive structure extends between said spacers and said silicon dioxide structure.

Claim 23

A semiconductor Mask ROM device comprising a first conductivity type layer on a semiconductor substrate, a gate oxide layer on the surface of said substrate having a thickness of about 200 Å, a first conductive polysilicon structure formed on said gate oxide layer, said first conductive structure having a thickness of about 500 Å formed with parallel stripes, a plurality of buried bit lines in said substrate beneath said gate oxide layer said buried bit lines being formed of arsenic dopant implanted with a dose of between about 1×10 15 /cm 2 and about 3×10 15 /cm 2 implanted between said parallel stripes of polysilicon with channel regions between said buried bit lines, a silicon dioxide structure having a thickness of about 5000 Å formed over said buried bit lines in contact with said gate oxide layer, a silicon nitride spacer structure formed over said first conductive structure adjacent to said silicon dioxide structures, a second conductive, polysilicon word line structure in electrical contact with said first conductive structure formed on the remaining structure on said workpiece said second conductive structure having a thickness between about 2000 Å about 4000 Å, and a ROM code implant formed in said substrate in said channel below said first conductive layer beneath the space between the surfaces of said second conductive structure where said second conductive structure extends between said spacers and said silicon dioxide structure.