Patent US5384284A successfully refreshed from Google Patents.
US5384284A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method to form a low resistant bond pad interconnect
Assignee: Micron Technology Inc
•
Filing: 1993-10-01
•
Granted: 1995-01-24
•
Expires: 2013-10-01
Abstract
Abstract The present invention develops a bond pad interconnect in an integrated circuit device, by forming an aluminum pad; bonding a metal layer (such as copper (Cu), nickel (Ni), tungsten (W), gold (Au), silver (Ag) or platinum (Pt)) or a metal alloy (such as titanium nitride) to the aluminum bond pad by chemical vapor deposition or by electroless deposition; and adhering a conductive epoxy film to the metal layer, thereby forming a low resistive bond pad interconnect.
Inventors
- 👤 Trung T. Doan
- 👤 Mark E. Tuttle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:26
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W72/00; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
47 words
A process to form a pad interconnect, said process comprising: a) forming a conductive supporting layer serving as said pad; b) bonding an intermediate conductive layer to said conductive supporting layer; and c) adhering an interconnecting material, comprising a conductive epoxy material, to said intermediate conductive layer.
Claim 2
Dependent Claim
47 words
A process to form a pad interconnect, said process comprising: a) forming a conductive supporting layer serving as said pad; b) bonding an intermediate conductive layer to said conductive supporting layer; and c) adhering an interconnecting material, comprising a conductive epoxy material, to said intermediate conductive layer.
Claim 3
Dependent Claim
12 words
The process of claim 1, wherein said conductive supporting layer comprises aluminum.
Claim 4
Dependent Claim
17 words
The process of claim 1, wherein step "b" comprises chemical vapor deposition of said intermediate conductive material.
Claim 5
Dependent Claim
22 words
The process of claim 1, wherein said chemical vapor deposition is selective and thereby deposits metal on said conductive supporting layer only.
Claim 6
Dependent Claim
16 words
The process of claim 1, wherein step "b" comprises electroless deposition of said intermediate conductive material.
Claim 7
Dependent Claim
21 words
The process of claim 5, wherein said electroless deposition is selective and thereby deposits metal on said conductive supporting layer only.
Claim 8
Dependent Claim
14 words
The process of claim 1, wherein said intermediate conductive layer comprises a metal compound.
Claim 9
Dependent Claim
12 words
The process of claim 7, wherein said metal compound comprises titanium nitride.
Claim 10
Dependent Claim
32 words
The process of claim 1, wherein said intermediate conductive layer comprises a metal selected from the group consisting of copper (Cu), nickel (Ni), tungsten (W), gold (Au), silver (Ag) and platinum (Pt).
Claim 11
Dependent Claim
15 words
The process of claim 1, wherein said intermediate conductive layer comprises a conductive passivating film.
Claim 12
Dependent Claim
50 words
A process for forming a bond pad interconnect, said process comprising: a) forming an aluminum supporting layer serving as said bond pad; b) bonding an intermediate conductive layer to said aluminum supporting layer; and c) adhering an interconnecting conductive material, comprising a conductive epoxy material, to said intermediate conductive layer.
Claim 13
Dependent Claim
50 words
A process for forming a bond pad interconnect, said process comprising: a) forming an aluminum supporting layer serving as said bond pad; b) bonding an intermediate conductive layer to said aluminum supporting layer; and c) adhering an interconnecting conductive material, comprising a conductive epoxy material, to said intermediate conductive layer.
Claim 14
Dependent Claim
17 words
The process of claim 11, wherein step "b" comprises chemical vapor deposition of said intermediate conductive material.
Claim 15
Dependent Claim
22 words
The process of claim 12, wherein said chemical vapor deposition is selective and thereby deposits metal on said conductive supporting layer only.
Claim 16
Dependent Claim
16 words
The process of claim 11, wherein step "b" comprises electroless deposition of said intermediate conductive material.
Claim 17
Dependent Claim
21 words
The process of claim 14, wherein said electroless deposition is selective and thereby deposits metal on said conductive supporting layer only.
Claim 18
Dependent Claim
14 words
The process of claim 11, wherein said intermediate conductive layer comprises a metal compound.
Claim 19
Dependent Claim
12 words
The process of claim 16, wherein said metal compound comprises titanium nitride.
Claim 20
Dependent Claim
32 words
The process of claim 11, wherein said intermediate conductive layer comprises a metal selected from the group consisting of copper (Cu), nickel (Ni), tungsten (W), gold (Au), silver (Ag) and platinum (Pt).
Claim 21
Dependent Claim
14 words
The process of claim 11, wherein said interconnecting material comprises a conductive passivating film.
Claim 22
Dependent Claim
55 words
A process for forming a bond pad interconnect in an integrated circuit device, said process comprising: a) forming an aluminum supporting layer serving as said bond pad; b) bonding an intermediate conductive layer to said aluminum supporting layer; and c) adhering an interconnecting conductive material, comprising a conductive epoxy material, to said intermediate conductive layer.
Claim 23
Dependent Claim
55 words
A process for forming a bond pad interconnect in an integrated circuit device, said process comprising: a) forming an aluminum supporting layer serving as said bond pad; b) bonding an intermediate conductive layer to said aluminum supporting layer; and c) adhering an interconnecting conductive material, comprising a conductive epoxy material, to said intermediate conductive layer.
Claim 24
Dependent Claim
14 words
The process of claim 20, wherein said intermediate conductive layer comprises a metal compound.
Claim 25
Dependent Claim
12 words
The process of claim 21, wherein said metal compound comprises titanium nitride.
Claim 26
Dependent Claim
32 words
The process of claim 20, wherein said intermediate conductive layer comprises a metal selected from the group consisting of copper (Cu), nickel (Ni), tungsten (W), gold (Au), silver (Ag) and platinum (Pt).
Claim 27
Dependent Claim
15 words
The process of claim 23, wherein said intermediate conductive layer comprises a conductive passivating film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-23 | 1998-07-25 | 1999-01-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-23 | 2002-07-25 | 2003-01-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-23 | 2006-07-25 | 2007-01-24 | $7700.00 | Window Closed / Lapsed |