Patent US5384274A successfully refreshed from Google Patents.
US5384274A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a combined semiconductor device and inductor
Assignee: Nippon Precision Circuits Inc
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Filing: 1994-05-12
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Granted: 1995-01-24
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Expires: 2014-05-12
Abstract
Abstract A method of making a semiconductor device having formed thereon an inductor comprises a silicon substrate. A cut out region is obtained by removing a part of the silicon substrate in a hollow shape which may be a hollow cavity or a hollow cavity with an insulating material having a low complex permittivity such as silicon oxide buried therein. An insulator layer is formed on the cut out region and on the periphery thereof. A connection layer serves as one of the leads of the inductor and is formed using an electric conductive material such as a metal or doped polycrystalline silicon. A contact hole is provided in the interlayer insulation layer. A connection layer serves as an inductor and the other lead of the inductor, which is formed using an electric conductive material such as a metal. A protective insulator layer is also provided on the top of the structure.
Inventors
- 👤 Kaoru Kanehachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 16:40
CPC Classifications
H; H10; H10D; H10D84/00
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
90 words
A process for producing a semiconductor device, comprising the steps of: forming a first insulation layer in a given region on a first surface of a semiconductor substrate; simultaneously forming: a first conductor comprising an inductor extending across a part of said given region of said first insulation layer, and a second conductor on said first surface outside of said given region, said second conductor comprising an electrode of an MOS transistor; and forming a cavity in a second surface of said semiconductor substrate in alignment with said given region.
Claim 2
Dependent Claim
90 words
A process for producing a semiconductor device, comprising the steps of: forming a first insulation layer in a given region on a first surface of a semiconductor substrate; simultaneously forming: a first conductor comprising an inductor extending across a part of said given region of said first insulation layer, and a second conductor on said first surface outside of said given region, said second conductor comprising an electrode of an MOS transistor; and forming a cavity in a second surface of said semiconductor substrate in alignment with said given region.
Claim 3
Dependent Claim
19 words
A process according to claim 1, further including the step of forming a solid insulating material in said cavity.
Claim 4
Dependent Claim
17 words
A process according to claim 1, wherein said electrode comprises a gate electrode of an MOS transistor.
Claim 5
Dependent Claim
26 words
A process according to claim 1, wherein said step of forming said first conductor includes the step of forming said first conductor in a spiral pattern.
Claim 6
Dependent Claim
151 words
A process for producing a semiconductor device, comprising the steps of: forming a first insulation layer in a given region on a first surface of a semiconductor substrate; simultaneously forming: a first conductor comprising an inductor extending across a part of said given region of said first insulation layer, and a second conductor on said first surface outside of said given region, said second conductor comprising an electrode of an MOS transistor; and forming a second insulation layer over said first insulation layer, said first conductor, said second conductor and said substrate not covered by said first insulation layer, such that a contact hole is formed in said second insulation layer above said first conductor; forming a connection layer on said second insulation layer and in said contact hole for contacting said first conductor; forming a cavity in a second surface of said semiconductor substrate in alignment with said given region.
Claim 7
Dependent Claim
151 words
A process for producing a semiconductor device, comprising the steps of: forming a first insulation layer in a given region on a first surface of a semiconductor substrate; simultaneously forming: a first conductor comprising an inductor extending across a part of said given region of said first insulation layer, and a second conductor on said first surface outside of said given region, said second conductor comprising an electrode of an MOS transistor; and forming a second insulation layer over said first insulation layer, said first conductor, said second conductor and said substrate not covered by said first insulation layer, such that a contact hole is formed in said second insulation layer above said first conductor; forming a connection layer on said second insulation layer and in said contact hole for contacting said first conductor; forming a cavity in a second surface of said semiconductor substrate in alignment with said given region.
Claim 8
Dependent Claim
19 words
A process according to claim 5, further including the step of forming a solid insulating material in said cavity.
Claim 9
Dependent Claim
17 words
A process according to claim 5, wherein said electrode comprises a gate electrode of an MOS transistor.
Claim 10
Dependent Claim
26 words
A process according to claim 5, wherein said step of forming said first conductor includes the step of forming said first conductor in a spiral pattern.
Claim 11
Dependent Claim
208 words
A process for producing a semiconductor device, comprising the steps of: forming a first insulation layer in a given region on a first surface of a semiconductor substrate; simultaneously forming: a first conductor comprising an inductor extending across a part of said given region of said first insulation layer, and a second conductor on said first surface outside of said given region, said second conductor comprising an electrode of an MOS transistor; and forming a second insulation layer over said first insulation layer, said first conductor, said second conductor and said substrate not covered by said first insulation layer, such that a first contact hole is formed in said second insulation layer above said first conductor; forming a first connection layer on said second insulation layer and in said first contact hole for contacting said first conductor; forming a third insulation layer over said second insulation layer and said connection layer, such that a second contact hole is formed in said third insulation layer above said connection layer; forming a second connection layer on said third insulation layer and in said second contact hole for contacting said first connection layer; and forming a cavity in a second surface of said semiconductor substrate in alignment with said given region.
Claim 12
Dependent Claim
208 words
A process for producing a semiconductor device, comprising the steps of: forming a first insulation layer in a given region on a first surface of a semiconductor substrate; simultaneously forming: a first conductor comprising an inductor extending across a part of said given region of said first insulation layer, and a second conductor on said first surface outside of said given region, said second conductor comprising an electrode of an MOS transistor; and forming a second insulation layer over said first insulation layer, said first conductor, said second conductor and said substrate not covered by said first insulation layer, such that a first contact hole is formed in said second insulation layer above said first conductor; forming a first connection layer on said second insulation layer and in said first contact hole for contacting said first conductor; forming a third insulation layer over said second insulation layer and said connection layer, such that a second contact hole is formed in said third insulation layer above said connection layer; forming a second connection layer on said third insulation layer and in said second contact hole for contacting said first connection layer; and forming a cavity in a second surface of said semiconductor substrate in alignment with said given region.
Claim 13
Dependent Claim
19 words
A process according to claim 9, further including the step of forming a solid insulating material in said cavity.
Claim 14
Dependent Claim
17 words
A process according to claim 9, wherein said electrode comprises a gate electrode of an MOS transistor.
Claim 15
Dependent Claim
26 words
A process according to claim 9, wherein said step of forming said first conductor includes the step of forming said first conductor in a spiral pattern.
Claim 16
Dependent Claim
28 words
A process according to claim 9, wherein said step of forming said second connection layer includes the step of forming said second connection layer in a spiral pattern.
References Cited (Backward Citations)
JPS629661A
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JPS6423455A
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JPH0267752A
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US4959705A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-23 | 1998-07-25 | 1999-01-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-23 | 2002-07-25 | 2003-01-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-23 | 2006-07-25 | 2007-01-24 | $7700.00 | Window Closed / Lapsed |