US5383213A
Expired / Lapsed
US
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Semiconductor device with current confinement structure
Assignee: Furukawa Electric Co Ltd
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Filing: 1993-05-07
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Granted: 1995-01-17
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Expires: 2013-05-07
Abstract
Abstract There is provided a semiconductor device comprising a current confinement structure capable of reducing leakage currents. The semiconductor device comprising a current confinement structure and a multiquantum barrier structure 10 disposed in said current confinement structure and having an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.
Inventors
- 👤 Michinori Irikawa
- 👤 Masayuki Iwase
- 👤 Kenichi Iga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 01:13
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2004; H01S5/2009; H01S5/2013; H01S5/2205; H01S5/2275; H01S5/30; H01S5/32; H01S5/323; H01S5/3235; H01S5/32391
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
40 words
A semiconductor device consisting of a substrate, active region and semiconductor current blocking layers to confine current to said active region and electrodes to inject current or to apply voltage, wherein said current blocking layers include a multiquantum barrier structure.
Claim 2
Dependent Claim
40 words
A semiconductor device consisting of a substrate, active region and semiconductor current blocking layers to confine current to said active region and electrodes to inject current or to apply voltage, wherein said current blocking layers include a multiquantum barrier structure.
Claim 3
Dependent Claim
33 words
A semiconductor device claimed in claim 1, wherein said current blocking structure constitutes BH structure and includes pn junction, and wherein said multiquantum barrier structure consists of superlattice of GaInAsP or AlGaInAs materials.
Claim 4
Dependent Claim
33 words
A semiconductor device claimed in claim 1, wherein said current blocking structure constitutes BH structure and includes semi-insulating layer, and wherein said multiquantum barrier structure consists of superlattice of GaInAsP or AlGaInAs materials.
Claim 5
Dependent Claim
30 words
A fabrication method of the device claimed in claim 1, comprising utilizing atomic multiquantum barrier layer epitaxy method to form NQB structure at the side wall of said active region.
References Cited (Backward Citations)
US5214662A
Cited
US5253265A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-16 | 1998-07-18 | 1999-01-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-16 | 2002-07-18 | 2003-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-16 | 2006-07-18 | 2007-01-17 | $7700.00 | Window Closed / Lapsed |