US5253265A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Fujifilm Business Innovation Corp
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Filing: 1992-02-06
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Granted: 1993-10-12
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Expires: 2012-02-06
Abstract
Abstract A semiconductor laser device having an active layer which is comprised of a quantum well layer formed of a mixed crystal material, and barrier layers provided on both sides of the quantum well layer in such a manner as to sandwich the same, is characterized in that Ge is thermally diffused in a portion of the active layer to disorder the quantum well layer and the barrier layers at that portion so as to form a non-light-emitting area with a low refractive index, while the quantum well layer and the barrier layers at a portion where Ge is not diffused is formed as a refractive index waveguide which is a light-emitting area.
Inventors
- 👤 Yasuji Seko
- 👤 Kiichi Ueyanagi
- 👤 Hideo Nakayama
- 👤 Hideki Fukunaga
- 👤 Nobuaki Ueki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:23
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; B; B82; B82Y; B82Y20/00; H01S5/20; H01S5/2054; H01S5/2059; H01S5/3432
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
74 words
A semiconductor laser device, comprising: an active layer including a quantum well layer made of a mixed crystal material and barrier layers provided on both sides of said quantum well layer; and cladding layers provided on both sides of said active layer so as to sandwich said active layer; said active layer having a region containing Ge, and said quantum well layer and said barrier layers in said region being disordered by said Ge.
Claim 2
Dependent Claim
74 words
A semiconductor laser device, comprising: an active layer including a quantum well layer made of a mixed crystal material and barrier layers provided on both sides of said quantum well layer; and cladding layers provided on both sides of said active layer so as to sandwich said active layer; said active layer having a region containing Ge, and said quantum well layer and said barrier layers in said region being disordered by said Ge.
Claim 3
Dependent Claim
24 words
A semiconductor laser device as claimed in claim 1, wherein said cladding layers have portions thereof containing e and contacting said active layer region.
Claim 4
Dependent Claim
33 words
A semiconductor laser device as claimed in claim 1, further comprising a substrate provided on one of said cladding layers, and an oxidation preventing layer provided on the other of said cladding layers.
Claim 5
Dependent Claim
28 words
A semiconductor laser device as claimed in claim 3, further comprising a first electrode provided on said substrate, and a second electrode provided on said oxidation preventing layer.
Claim 6
Dependent Claim
78 words
A semiconductor laser device, comprising: an active layer including a quantum well layer made of a mixed crystal material and barrier layers provided on both sides of said quantum well layer; and cladding layers provided on both sides of said active layer so as to sandwich said active layer; said active layer having a plurality of regions containing Ge, and said quantum well layer and said barrier layers in said plurality of regions being disordered by said Ge.
Claim 7
Dependent Claim
78 words
A semiconductor laser device, comprising: an active layer including a quantum well layer made of a mixed crystal material and barrier layers provided on both sides of said quantum well layer; and cladding layers provided on both sides of said active layer so as to sandwich said active layer; said active layer having a plurality of regions containing Ge, and said quantum well layer and said barrier layers in said plurality of regions being disordered by said Ge.
Claim 8
Dependent Claim
24 words
A semiconductor laser device as claimed in claim 5, wherein said cladding layers have portions thereof containing Ge and contacting said active layer regions.
Claim 9
Dependent Claim
33 words
A semiconductor laser device as claimed in claim 5, further comprising a substrate provided on one of said cladding layers, and an oxidation preventing layer provided on the other of said cladding layers.
Claim 10
Dependent Claim
31 words
A semiconductor laser device as claimed in claim 7, further comprising a first electrode provided on said substrate, and a plurality of second individual electrodes provided on said oxidation preventing layer.
References Cited (Backward Citations)
US4727556A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-11 | 1997-04-12 | 1997-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-11 | 2001-04-12 | 2001-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-11 | 2005-04-12 | 2005-10-12 | $7700.00 | Window Closed / Lapsed |