US5214662A
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Semiconductor optical devices with pn current blocking layers of wide-band gap materials
Assignee: Furukawa Electric Co Ltd
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Filing: 1991-11-15
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Granted: 1993-05-25
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Expires: 2011-11-15
Abstract
Abstract A semiconductor optical device comprising a mesa shaped double heterostructure having an active layer on an InP substrate, and pn junction current blocking layers embedded at all sides of the said double heterostructure, wherein at least portion of said current blocking layers consists of a semiconductor layer lattice-matched to InP and having a band gap larger than that of the InP at a room temperature. Therefore, the current blocking characteristics of the current blocking layer is improved so that the increase of leakage current under operating condition of high temperature and high output power is well suppressed, and the nonlinearity in the optical output-current characteristic is drastically reduced even under such operating conditions.
Inventors
- 👤 Michinori Irikawa
- 👤 Masayuki Iwase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:11
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
132 words
A semiconductor optical device including a mesa, current blocking and confining layers embedded at all sides of said mesa and a pair of ohmic contact metals, a base semiconductor region of said mesa being an InP layer of a first conductivity type, said mesa including a double-heterostructure comprising an active layer including (Al)GaInAs(P) and a pair of cladding layers consisting of both p and n conductivity type layer, wherein materials of said cladding layers include either InP or (AlGa) x In 1-x As(x=0.48), and said current blocking and confining layers includes a pn junction, and wherein at least a portion of said current blocking and confining layers consists of either (Al y Ga x In 1-x-y As(y>0.4, x+y=0.48) or AlAs y Sb 1-Y (Y=0.56), in either case of a second conductivity type.
Claim 2
Dependent Claim
132 words
A semiconductor optical device including a mesa, current blocking and confining layers embedded at all sides of said mesa and a pair of ohmic contact metals, a base semiconductor region of said mesa being an InP layer of a first conductivity type, said mesa including a double-heterostructure comprising an active layer including (Al)GaInAs(P) and a pair of cladding layers consisting of both p and n conductivity type layer, wherein materials of said cladding layers include either InP or (AlGa) x In 1-x As(x=0.48), and said current blocking and confining layers includes a pn junction, and wherein at least a portion of said current blocking and confining layers consists of either (Al y Ga x In 1-x-y As(y>0.4, x+y=0.48) or AlAs y Sb 1-Y (Y=0.56), in either case of a second conductivity type.
Claim 3
Dependent Claim
21 words
A semiconductor optical device according to claim 1, wherein said Inp layer is n-type and is formed on an n-InP substrate.
Claim 4
Dependent Claim
20 words
A semiconductor optical device according to claim 1, wherein said current blocking layer is formed by a liquid-phase epitaxial method.
Claim 5
Dependent Claim
20 words
A semiconductor optical device according to claim 1, wherein said current blocking layer is formed by a vapor-phase epitaxial method.
Claim 6
Dependent Claim
19 words
A semiconductor optical device according to claim 1, wherein said double heterostructure is formed in a striped mesa shape.
Claim 7
Dependent Claim
19 words
A semiconductor optical device according to claim 1, wherein said double heterostructure is formed in a cylindrical mesa shape.
Claim 8
Dependent Claim
188 words
A semiconductor optical device including a mesa, current blocking and confining layers embedded at all sides of said mesa and a pair of ohmic contact metals, a base semiconductor region of said mesa being an InP layer of p-type conductivity, and said mesa including a double-heterostructure comprising an active layer including (Al)GaInAs(P) and a pair of cladding layers consisting of both p and n conductivity type layer, wherein materials of said cladding layers include either InP or (AlGa) x In 1-x As(x=0.48), and where said current blocking and confining layers comprise four layers consisting of a first p-type layer, a first n-type layer, a second p-type layer and a second n-type layer, respectively, which are embedded in that order from said base semiconductor layer side to the top layer, except at said mesa region, wherein at least a portion of the first p-type, first n-type and second p-type layers of said current blocking and confining layers, consists of either (Al y Ga x In 1-x-y As(y>0.4, x+y=0.48) or AlAs Y Sb 1-Y (Y=0.56) and the second n-type layer of said current blocking and confining layers consists of InP.
Claim 9
Dependent Claim
188 words
A semiconductor optical device including a mesa, current blocking and confining layers embedded at all sides of said mesa and a pair of ohmic contact metals, a base semiconductor region of said mesa being an InP layer of p-type conductivity, and said mesa including a double-heterostructure comprising an active layer including (Al)GaInAs(P) and a pair of cladding layers consisting of both p and n conductivity type layer, wherein materials of said cladding layers include either InP or (AlGa) x In 1-x As(x=0.48), and where said current blocking and confining layers comprise four layers consisting of a first p-type layer, a first n-type layer, a second p-type layer and a second n-type layer, respectively, which are embedded in that order from said base semiconductor layer side to the top layer, except at said mesa region, wherein at least a portion of the first p-type, first n-type and second p-type layers of said current blocking and confining layers, consists of either (Al y Ga x In 1-x-y As(y>0.4, x+y=0.48) or AlAs Y Sb 1-Y (Y=0.56) and the second n-type layer of said current blocking and confining layers consists of InP.
Claim 10
Dependent Claim
21 words
A semiconductor optical device according to claim 7, wherein said InP layer is p-type and is formed on an n-InP substrate.
Claim 11
Dependent Claim
20 words
A semiconductor optical device according to claim 7, wherein said current blocking layer is formed by a liquid-phase epitaxial method.
Claim 12
Dependent Claim
20 words
A semiconductor optical device according to claim 7, wherein said current blocking layer is formed by a vapor-phase epitaxial method.
Claim 13
Dependent Claim
19 words
A semiconductor optical device according to claim 7, wherein said double heterostructure is formed in a striped mesa shape.
Claim 14
Dependent Claim
19 words
A semiconductor optical device according to claim 7, wherein said double heterostructure is formed in a cylindrical mesa shape.
References Cited (Backward Citations)
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