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US5382822A
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Metal-insulator semiconductor field-effect transistor
Assignee: Siemens AG
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Filing: 1993-09-27
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Granted: 1995-01-17
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Expires: 2013-09-27
Abstract
Abstract A MISFET (metal-insulator semiconductor field-effect transistor) may be used for application at temperatures above 200° C. In particular, leakage currents between the gate electrode (6) and the drain (8) are kept at a low level, and a considerable rate of rise in its control characteristic is achieved. An insulating layer (4) of diamond is arranged between the gate electrode (6) and a semiconductor (2) having a larger energy gap than silicon (Si).
Inventors
- 👤 Rene Stein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:40
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
63 words
A metal-insulator semiconductor field-effect transistor comprising: a gate electrode; a semiconductor; and an insulating layer of diamond arranged between the gate electrode and the semiconductor; wherein a material from the group of the following materials is provided as the semiconductor: gallium phosphide (GaP), gallium arsenide (GaAs), gallium nitride (GaN), aluminum nitride (AlN), an aluminum phosphide (AlP), boron nitride (BN), and silicon carbide (SiC).
Claim 2
Dependent Claim
63 words
A metal-insulator semiconductor field-effect transistor comprising: a gate electrode; a semiconductor; and an insulating layer of diamond arranged between the gate electrode and the semiconductor; wherein a material from the group of the following materials is provided as the semiconductor: gallium phosphide (GaP), gallium arsenide (GaAs), gallium nitride (GaN), aluminum nitride (AlN), an aluminum phosphide (AlP), boron nitride (BN), and silicon carbide (SiC).
Claim 3
Dependent Claim
28 words
The metal-insulator semiconductor field-effect transistor according to claim 1, wherein a thickness of the insulating layer of diamond is selected to be between 0.001 μm and 10 μm.
Claim 4
Dependent Claim
28 words
The metal-insulator semiconductor field-effect transistor according to claim 1, wherein a thickness of the insulating layer of diamond is selected to be between 0.01 μm and 2 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-16 | 1998-07-18 | 1999-01-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-16 | 2002-07-18 | 2003-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-16 | 2006-07-18 | 2007-01-17 | $7700.00 | Window Closed / Lapsed |