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US5382809A
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Semiconductor device including semiconductor diamond
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1993-09-09
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Granted: 1995-01-17
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Expires: 2013-09-09
Abstract
Abstract A semiconductor device having an MISFET-like structure. The semiconductor device comprises: an p-type semiconductor diamond layer disposed on an insulating diamond substrate for providing a channel region; and a drain electrode, a source electrode and a gate electrode disposed on the p-type diamond layer. An intermediate region comprising diamond doped with at least an n-type dopant such as nitrogen atoms, is formed between the channel region and the gate electrode.
Inventors
- 👤 Yoshiki Nishibayashi
- 👤 Tadashi Tomikawa
- 👤 Shinichi Shikata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 14:56
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/83; H10D30/01; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2903; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3406; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/2044; H10P30/21; H10P30/22; H10P30/28
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
64 words
A semiconductor device, comprising: a source electrode and a drain electrode disposed on a substrate; a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component; a gate electrode disposed on the channel region; and an intermediate region formed between the channel region and the gate electrode, which comprises diamond doped with at least an n-type dopant.
Claim 2
Dependent Claim
64 words
A semiconductor device, comprising: a source electrode and a drain electrode disposed on a substrate; a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component; a gate electrode disposed on the channel region; and an intermediate region formed between the channel region and the gate electrode, which comprises diamond doped with at least an n-type dopant.
Claim 3
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein the p-type dopant contained in the p-type diamond comprises boron atoms.
Claim 4
Dependent Claim
14 words
A semiconductor device according to claim 1, wherein the n-type dopant comprises nitrogen atoms.
Claim 5
Dependent Claim
36 words
A semiconductor device according to claim 3, wherein the intermediate region comprises diamond doped with nitrogen atoms in a concentration of not less than 10 5 cm -3 and less than 10 19 cm -3 .
Claim 6
Dependent Claim
27 words
A semiconductor device according to claim 3, wherein the intermediate region comprises diamond doped with nitrogen atoms in a concentration of 10 19 cm -3 or more.
Claim 7
Dependent Claim
38 words
A semiconductor device according to claim 3, wherein the intermediate region comprises diamond doped with nitrogen atoms and boron atoms respectively in a nitrogen atom concentration (CN) and a boron atom concentration (CB) satisfying a relationship of 100CB≦CN>CB.
Claim 8
Dependent Claim
24 words
A semiconductor device according to claim 6, wherein the nitrogen atom concentration (CN) and the boron atom concentration (CB) satisfy a relationship of 10CB≦CN>CB.
Claim 9
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein the intermediate region is formed by introducing an n-type dopant into p-type diamond by ion implantation.
Claim 10
Dependent Claim
71 words
A semiconductor device, comprising: a source electrode and a drain electrode disposed on a substrate; a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component; a gate electrode disposed on the channel region; and an insulating layer and a layer containing an n-type dopant which are formed between the channel region and the gate electrode in this order from the gate electrode side.
Claim 11
Dependent Claim
71 words
A semiconductor device, comprising: a source electrode and a drain electrode disposed on a substrate; a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component; a gate electrode disposed on the channel region; and an insulating layer and a layer containing an n-type dopant which are formed between the channel region and the gate electrode in this order from the gate electrode side.
Claim 12
Dependent Claim
43 words
A semiconductor device according to claim 9, wherein the n-type dopant-containing layer comprises diamond doped with nitrogen atoms as the n-type dopant in a nitrogen atom concentration of not less than 10 15 cm -3 and less than 10 19 cm -3 .
Claim 13
Dependent Claim
34 words
A semiconductor device according to claim 9, wherein the n-type dopant-containing layer comprises diamond doped with nitrogen atoms as the n-type dopant in a nitrogen atom concentration of 10 19 cm -3 or more.
Claim 14
Dependent Claim
43 words
A semiconductor device according to claim 9, wherein the n-type dopant-containing layer comprises diamond doped with nitrogen atoms as the n-type dopant and boron atoms, respectively in a nitrogen atom concentration (CN) and a boron atom concentration (CB) satisfying a relationship of 100CB≦CN>CB.
Claim 15
Dependent Claim
24 words
A semiconductor device according to claim 12, wherein the nitrogen atom concentration (CN) and the boron atom concentration (CB) satisfy a relationship of 10CB≦CN>CB.
Claim 16
Dependent Claim
29 words
A semiconductor device according to claim 9, wherein the insulating layer and the n-type dopant-containing layer are formed by introducing an n-type dopant into p-type diamond by ion implantation.
Claim 17
Dependent Claim
30 words
A semiconductor device according to claim 9, wherein the insulating layer and the n-type dopant-containing layer contain a p-type dopant and contain an n-type dopant introduced thereinto by ion implantation.
Claim 18
Dependent Claim
65 words
A semiconductor device, comprising: a source electrode and a drain electrode disposed on a substrate; a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component; a gate electrode disposed on the channel region; and an insulating region which is formed between the channel region and the gate electrode, and is formed by ion implantation into p-type diamond.
Claim 19
Dependent Claim
65 words
A semiconductor device, comprising: a source electrode and a drain electrode disposed on a substrate; a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component; a gate electrode disposed on the channel region; and an insulating region which is formed between the channel region and the gate electrode, and is formed by ion implantation into p-type diamond.
Claim 20
Dependent Claim
42 words
A semiconductor device according to claim 16, wherein the insulating region comprises diamond doped with nitrogen atoms as an n-type dopant in a nitrogen atom concentration of not less than 10 15 cm -3 and less than 10 19 Cm -3 .
Claim 21
Dependent Claim
33 words
A semiconductor device according to claim 16, wherein the insulating region comprises diamond doped with nitrogen atoms as an n-type dopant in a nitrogen atom concentration of 10 19 cm -3 or more.
Claim 22
Dependent Claim
30 words
A semiconductor device according to claim 16, wherein the insulating region is formed by introducing an n-type dopant or a Group IV element into the p-type diamond by ion implantation.
Claim 23
Dependent Claim
70 words
A semiconductor device, comprising: a source electrode and a drain electrode disposed on a substrate; a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component; a gate electrode disposed on the channel region; and an intermediate region formed between the channel region and the gate electrode, which comprises diamond doped with at least an n-type or p-type dopant in a predetermined amount.
Claim 24
Dependent Claim
70 words
A semiconductor device, comprising: a source electrode and a drain electrode disposed on a substrate; a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component; a gate electrode disposed on the channel region; and an intermediate region formed between the channel region and the gate electrode, which comprises diamond doped with at least an n-type or p-type dopant in a predetermined amount.
Claim 25
Dependent Claim
66 words
A semiconductor device, comprising: a source electrode and a drain electrode disposed on a substrate; a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component; a gate electrode disposed on the channel region; and an intermediate region formed between the channel region and the gate electrode, which comprises diamond doped with at least an n-type or p-type dopant.
Claim 26
Dependent Claim
66 words
A semiconductor device, comprising: a source electrode and a drain electrode disposed on a substrate; a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component; a gate electrode disposed on the channel region; and an intermediate region formed between the channel region and the gate electrode, which comprises diamond doped with at least an n-type or p-type dopant.
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