US5298765A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diamond Schottky gate type field-effect transistor
Assignee: Kobe Steel Ltd
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Filing: 1992-03-27
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Granted: 1994-03-29
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Expires: 2012-03-27
Abstract
Abstract Disclosed herein is a diamond Schottky gate type field effect transistor (FET) comprising: an insulating diamond under layer; a doped semiconducting diamond layer as an active layer, which has electrode areas formed by ion implantation such that the interface level is formed near the surface thereof; an insulating diamond layer formed on a portion of the semiconducting diamond layer; a source electrode made of a degenerate diamond film provided in one of the electrode areas of the semiconducting diamond layer, to form an ohmic contact between the same and the semiconducting diamond layer; a drain electrode made of a degenerate diamond film provided in the other of the electrode areas of the semiconducting diamond layer, to form an ohmic contact between the same and the semiconducting diamond layer; and a gate electrode made of a degenerate diamond film formed on the insulating diamond layer, to form a Schottky junction between the same and the semiconducting diamond layer through the diamond insulating layer.
Inventors
- 👤 Kozo Nishimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:25
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; H10D30/00; H10D30/80; H10D30/87
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
169 words
A diamond Schottky gate type field effect transistor (FET) comprising: an insulating diamond under-layer; a doped semiconducting diamond active layer above said insulating diamond underlayer, which has electrode areas formed by ion implantation such that an interface level is formed near the surface of said active layer in each of said electrode areas; an insulating diamond layer formed on a portion of said semiconducting diamond layer; a source electrode comprising a degenerate diamond film disposed on a first one of said electrode areas of said semiconducting diamond layer, wherein an ohmic contact is formed between the source electrode and said semiconducting diamond layer; a drain electrode comprising a degenerate diamond film disposed on a second one of said electrode areas of said semiconducting diamond layer, to form an ohmic contact between the drain electrode and said semiconducting diamond layer; and a gate electrode comprising a degenerate diamond film formed on said insulating diamond layer, wherein a Schottky junction is formed between the gate electrode and said semiconducting diamond layer.
Claim 2
Dependent Claim
169 words
A diamond Schottky gate type field effect transistor (FET) comprising: an insulating diamond under-layer; a doped semiconducting diamond active layer above said insulating diamond underlayer, which has electrode areas formed by ion implantation such that an interface level is formed near the surface of said active layer in each of said electrode areas; an insulating diamond layer formed on a portion of said semiconducting diamond layer; a source electrode comprising a degenerate diamond film disposed on a first one of said electrode areas of said semiconducting diamond layer, wherein an ohmic contact is formed between the source electrode and said semiconducting diamond layer; a drain electrode comprising a degenerate diamond film disposed on a second one of said electrode areas of said semiconducting diamond layer, to form an ohmic contact between the drain electrode and said semiconducting diamond layer; and a gate electrode comprising a degenerate diamond film formed on said insulating diamond layer, wherein a Schottky junction is formed between the gate electrode and said semiconducting diamond layer.
Claim 3
Dependent Claim
68 words
A diamond Schottky gate type transistor, comprising: a doped semiconducting diamond active layer having a first doping density, said active layer having first and second electrode areas doped to a higher second doping density; a drain electrode comprising a degenerate diamond film provided on said second electrode area of said semiconducting diamond layer, wherein an ohmic contact is formed between the drain electrode and the semiconducting diamond layer.
Claim 4
Dependent Claim
68 words
A diamond Schottky gate type transistor, comprising: a doped semiconducting diamond active layer having a first doping density, said active layer having first and second electrode areas doped to a higher second doping density; a drain electrode comprising a degenerate diamond film provided on said second electrode area of said semiconducting diamond layer, wherein an ohmic contact is formed between the drain electrode and the semiconducting diamond layer.
Claim 5
Dependent Claim
21 words
A transistor according to claim 2, further comprising an insulating diamond layer formed on a portion of said semiconducting diamond layer.
Claim 6
Dependent Claim
42 words
A transistor according to claim 3, further comprising: a gate electrode comprising a degenerate diamond film formed on said insulating diamond layer, wherein a Schottky junction is formed between the gate electrode and the semiconducting diamond layer through said insulating diamond layer.
Claim 7
Dependent Claim
45 words
A transistor according to claim 2, wherein: said first and second electrode areas are in a first surface of said active layer; and further comprising an insulating diamond under-layer attached to that side of said doped semiconducting diamond layer which is opposite said first surface.
Claim 8
Dependent Claim
39 words
A diamond Schottky gate type transistor according to claim 2, comprising: a source electrode comprising a degenerate diamond film provided on said first electrode area, wherein an ohmic contact is formed between the source electrode and said active layer.
Claim 9
Dependent Claim
36 words
A transistor according to claim 2, further comprising: a source electrode comprising a degenerate diamond film provided on said first electrode area, wherein an ohmic contact is formed between the source electrode and said active layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-03-28 | 1997-09-27 | 1998-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-28 | 2001-09-27 | 2002-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-28 | 2005-09-27 | 2006-03-29 | $7700.00 | Window Closed / Lapsed |