Abstract A dielectrics dividing wafer is disclosed in which embedded dielectric films are provided in the interior of the wafer in a predetermined pattern extending laterally parallel to a face surface of the wafer, and partition dielectric films, in the form of vertical walls extending from the face surface and the rear surface of the wafer, to the embedded dielectric films, are provided to define semiconductor areas extending continuously from the face surface of the wafer to the rear surface of the wafer. The semiconductor areas can be used for vertical circuit elements. The partition dielectric films in conjunction with the embedded dielectric films and the face surface of the wafer also define additional planar semiconductor areas that can be used for planar structure circuit elements.
A dielectrics dividing wafer comprising: dielectric films embedded in the wafer in a predetermined pattern extending laterally parallel to a face surface of the wafer; and partition dielectric films disposed in the form of a vertical wall in the wafer, and extending between a rear surface of the wafer and the embedded dielectric films and between the embedded dielectric films and the face surface of the wafer; wherein first semiconductor regions, surrounded by the partition dielectric films, are formed continuously from the face surface of the wafer to the rear surface of the wafer and second semiconductor regions are formed that are bounded by the partition dielectric films, the embedded dielectric films, and the face surface of the wafer surface; and wherein the first and second semiconductor regions are electrically isolated from each other.
Claim 2
Dependent Claim
134 words
A dielectrics dividing wafer comprising: dielectric films embedded in the wafer in a predetermined pattern extending laterally parallel to a face surface of the wafer; and partition dielectric films disposed in the form of a vertical wall in the wafer, and extending between a rear surface of the wafer and the embedded dielectric films and between the embedded dielectric films and the face surface of the wafer; wherein first semiconductor regions, surrounded by the partition dielectric films, are formed continuously from the face surface of the wafer to the rear surface of the wafer and second semiconductor regions are formed that are bounded by the partition dielectric films, the embedded dielectric films, and the face surface of the wafer surface; and wherein the first and second semiconductor regions are electrically isolated from each other.
Claim 3
Dependent Claim
43 words
A dielectrics dividing wafer as claimed in claim 1, wherein the partition dielectric films are attached to either side of grooves cut in the wafer in the form of a vertical wall, and both sides of the grooves are filled with polycrystalline silicon.