Abstract A semiconductor device without erroneous operation and deterioration of characteristics in a transistor even when an impurity region is formed in self-alignment by ion implantation using a gate electrode as a mask, and a method of manufacturing thereof are disclosed. This semiconductor device includes a gate electrode formed of a polycrystal silicon layer 4b having the crystal orientation of the crystal grains arranged in a definite orientation. By implanting ions at a predetermined angle with respect to the crystallographic axis of the crystal grains of the polycrystal silicon layer 4b in forming a p + impurity region 5 by ion implantation using the gate electrode as a mask, the channeling phenomenon where ions pass through the gate electrode is prevented. Therefore, generation of erroneous operation and deterioration of characteristics in a transistor are prevented in forming an impurity region in self-alignment by ion implantation using the gate electrode as a mask.
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a pair of impurity regions of a second conductivity type formed with a predetermined distance therebetween on said semiconductor substrate; and a gate electrode formed on said semiconductor substrate between said pair of impurity regions, with an insulating film thereunder; wherein said gate electrode includes a first layer of polycrystalline material having crystal orientations of (110) and (111) on said insulating layer, and a second layer of polycrystalline material formed of a plurality of crystal grains which generally having planar orientation (110) on said first polycrystalline layer.
Claim 2
Dependent Claim
99 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a pair of impurity regions of a second conductivity type formed with a predetermined distance therebetween on said semiconductor substrate; and a gate electrode formed on said semiconductor substrate between said pair of impurity regions, with an insulating film thereunder; wherein said gate electrode includes a first layer of polycrystalline material having crystal orientations of (110) and (111) on said insulating layer, and a second layer of polycrystalline material formed of a plurality of crystal grains which generally having planar orientation (110) on said first polycrystalline layer.