US5378923A
Expired / Lapsed
US
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Semiconductor device including a field effect transistor
Assignee: Mitsubishi Electric Corp
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Filing: 1992-07-06
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Granted: 1995-01-03
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Expires: 2012-07-06
Abstract
Abstract Holes generated by impact ionization in a SOI-MOS transistor is removed from the channel region to improve the breakdown voltage between the source and drain. A channel region of the SOI-MOS transistor is formed of a p type silicon layer. A drain region is formed of an n type silicon layer. A source region adjacent to the channel region includes an n type germanium layer. The forbidden energy band gap width of the germanium is smaller than that of the silicon. The n type germanium layer is formed in at least a portion of the source region. This layer is formed by ion-implanting germanium into a portion of the silicon layer, or removing a portion of the silicon layer, followed by growing a germanium layer in an epitaxial manner thereabove.
Inventors
- 👤 Katsuyoshi Mitsui
- 👤 Masahiro Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:26
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
186 words
A semiconductor device including a field effect transistor, comprising: a semiconductor layer having a main surface and including a first semiconductor portion of a first conductivity type and having a first forbidden energy band gap width, first and second impurity regions of a second conductivity type formed within said semiconductor layer with a distance therebetween to define a channel region, and a gate electrode formed on said channel region with an insulation film therebetween, wherein at least said first impurity region comprises a second semiconductor portion having a second forbidden energy band gap width that is smaller than said first forbidden energy band gap width, said first semiconductor portion comprises silicon, and said second semiconductor portion comprises germanium; wherein said first impurity region comprises a first semiconductor layer including said first semiconductor portion, and a second semiconductor layer including said second semiconductor portion; and wherein said second semiconductor layer extends within said first semiconductor layer and is sandwiched by said first semiconductor layer so as to be enclosed by said first semiconductor layer in a geometrical plane parallel to said main surface of said semiconductor layer.
Claim 2
Dependent Claim
186 words
A semiconductor device including a field effect transistor, comprising: a semiconductor layer having a main surface and including a first semiconductor portion of a first conductivity type and having a first forbidden energy band gap width, first and second impurity regions of a second conductivity type formed within said semiconductor layer with a distance therebetween to define a channel region, and a gate electrode formed on said channel region with an insulation film therebetween, wherein at least said first impurity region comprises a second semiconductor portion having a second forbidden energy band gap width that is smaller than said first forbidden energy band gap width, said first semiconductor portion comprises silicon, and said second semiconductor portion comprises germanium; wherein said first impurity region comprises a first semiconductor layer including said first semiconductor portion, and a second semiconductor layer including said second semiconductor portion; and wherein said second semiconductor layer extends within said first semiconductor layer and is sandwiched by said first semiconductor layer so as to be enclosed by said first semiconductor layer in a geometrical plane parallel to said main surface of said semiconductor layer.
Claim 3
Dependent Claim
21 words
The semiconductor device according to claim 1, wherein said first impurity region is a source region of said field effect transistor.
Claim 4
Dependent Claim
31 words
The semiconductor device according to claim 1, wherein said second semiconductor layer extends in a direction parallel to a line defining a shortest distance between said first and second impurity regions.
References Cited (Backward Citations)
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