Patent US5376581A successfully refreshed from Google Patents.
US5376581A
Expired / Lapsed
US
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Fabrication of semiconductor laser elements
Assignee: Mitsubishi Chemical Corp
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Filing: 1993-09-10
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Granted: 1994-12-27
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Expires: 2013-09-10
Abstract
Abstract In a process for fabricating a semiconductor laser by forming a double-heterostructure made up of a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate at the first growth step, forming protecting films for selective growth on both sides of a striped region for current injection, without etching the second cladding layer, and growing a third cladding layer and a contact layer for current injection at a second growth step, the second cladding layer formed at the first growth step is grown to the thickness required for achieving laser characteristics.
Inventors
- 👤 Kenji Shimoyama
- 👤 Yuichi Inoue
- 👤 Hideki Gotoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 16:35
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/227; H01S5/2272; H01S5/40; H01S5/4025; H01S5/4031; Y; Y10; Y10S; Y10S148/00; Y10S148/095
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
96 words
A process for fabricating a semiconductor laser by forming a double-heterostructure made up of a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate at the first growth step, forming protecting films for selective growth on both sides of a striped region for current injection, without etching the second cladding layer, and growing a third cladding layer and a contact layer for current injection at a second growth step, wherein the second cladding layer formed at the first growth step is grown to the thickness required for achieving laser characteristics.
Claim 2
Dependent Claim
96 words
A process for fabricating a semiconductor laser by forming a double-heterostructure made up of a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate at the first growth step, forming protecting films for selective growth on both sides of a striped region for current injection, without etching the second cladding layer, and growing a third cladding layer and a contact layer for current injection at a second growth step, wherein the second cladding layer formed at the first growth step is grown to the thickness required for achieving laser characteristics.
Claim 3
Dependent Claim
17 words
A process as claimed in claim 1, wherein the semiconductor laser element is a twin-striped laser element.
Claim 4
Dependent Claim
25 words
A process as claimed in claim 2, wherein the distance between one set of ridges of the twin-striped laser element is 3 to 5 μm.
Claim 5
Dependent Claim
57 words
A process as claimed in claim 1, wherein the selective growth is carried out by a vapor-phase growth technique using an organic metal and, at the same time, halide or halogen gas is introduced in a growth chamber during the selective growth so as to prevent the deposition of polycrystals on the protecting films for selective growth.
Claim 6
Dependent Claim
16 words
A process as claimed in claim 4, wherein the halide or halogen gas is HCl gas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-26 | 1998-06-27 | 1998-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-26 | 2002-06-27 | 2002-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-26 | 2006-06-27 | 2006-12-27 | $7700.00 | Window Closed / Lapsed |