US5375135A
Expired / Lapsed
US
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Semiconductor laser device
Assignee: Furukawa Electric Co Ltd
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Filing: 1993-04-15
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Granted: 1994-12-20
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Expires: 2013-04-15
Abstract
Abstract A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V 0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied: L.sub.z <h/2(2m*V.sub.0).sup.1/2 (I) wherein h is Planck's constant and m* is the effective mass of electrons within the quantum well layer.
Inventors
- 👤 Toshiyuki Okumura
- 👤 Fumihiro Konushi
- 👤 Tatsuya Morioka
- 👤 Narihito Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:11
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; B; B82; B82Y; B82Y20/00; H01S2301/00; H01S2301/18; H01S5/10; H01S5/1039; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; H01S5/3415; H01S5/3421; H01S5/343; H01S5/34306; H01S5/3434
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
163 words
A semiconductor laser device having a resonator, comprising: a substrate; and a laminated structure formed on a top face of the substrate, the laminated structure including (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers, the quantum well structure serving as the resonator and including at least one quantum well layer and at least one barrier layer; and wherein the quantum well layer has a thickness L z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V 0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer; and wherein the relationship represented by formula (I) is satisfied: L.sub.z <h/2(2m*V.sub.0).sup.1/2 (I) wherein h is Planck's constant and m is the effective mass of electrons within the quantum well layer.
Claim 2
Dependent Claim
163 words
A semiconductor laser device having a resonator, comprising: a substrate; and a laminated structure formed on a top face of the substrate, the laminated structure including (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers, the quantum well structure serving as the resonator and including at least one quantum well layer and at least one barrier layer; and wherein the quantum well layer has a thickness L z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V 0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer; and wherein the relationship represented by formula (I) is satisfied: L.sub.z <h/2(2m*V.sub.0).sup.1/2 (I) wherein h is Planck's constant and m is the effective mass of electrons within the quantum well layer.
Claim 3
Dependent Claim
21 words
The device according to claim 1, wherein the first and second guide layers respectively have a Graded Index Separate Confinement Heterostructure.
Claim 4
Dependent Claim
39 words
The device according to claim 1, further comprising a current blocking layer, and wherein the laminated structure has a stripe-shaped geometry and is placed in contact with the current blocking layer on the side faces of the stripe-shaped geometry.
Claim 5
Dependent Claim
17 words
The device according to claim 1, wherein the quantum well structure has a single quantum well layer.
Claim 6
Dependent Claim
28 words
The device according to claim 1, wherein the quantum well structure has a plurality of quantum well layers and a plurality of barrier layers stacked in alternating manner.
Claim 7
Dependent Claim
22 words
The device according to claim 5, wherein the number of the quantum well layers is in the range of 6 to 10.
Claim 8
Dependent Claim
22 words
The device according to claim 6, wherein the length of the resonator is in the range of 250 μm to 700 μm.
Claim 9
Dependent Claim
42 words
The device according to claim 6, wherein the thicknesses of the first and second guide layers are selected so as to give a laser light emitted from the device a perpendicular spreading angle in the range of about 25° to about 30°.
References Cited (Backward Citations)
JPS61295685A
Cited
JPS622581A
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JPS6286782A
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US5175739A
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US5282218A
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US5287377A
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US5260959A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-19 | 1998-06-20 | 1998-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-19 | 2002-06-20 | 2002-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-19 | 2006-06-20 | 2006-12-20 | $7700.00 | Window Closed / Lapsed |