US5260959A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Narrow beam divergence laser diode
Assignee: Eastman Kodak Co
•
Filing: 1992-06-22
•
Granted: 1993-11-09
•
Expires: 2012-06-22
Abstract
Abstract A high efficiency laser diode that has a narrow beam divergence in a direction perpendicular with respect to the substrate, and a low threshold current.
Inventors
- 👤 Toshiro Hayakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:39
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H01S2301/00; H01S2301/18; H01S5/3421
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
149 words
A multilayer laser diode comprising: an optical waveguide region having a quantum well layer and at least one high refractive index layer on each side of the quantum well layer, upper and lower cladding regions respectively on each side of the optical waveguide region, each such region having a first low refractive index layer adjacent to the high refractive index layer and a second refractive index layer formed adjacent to a first low refractive index layer and having an even lower refractive index than such first low refractive index layer; a lower buffer layer adjacent to the lower cladding region; a cap layer for providing an electrode and positioned adjacent to the cladding region; and the energy of the lasing light of the laser diode being selected tob e lower than the energy gap of the cap layer and lower buffer layer that are adjacent to the cladding regions.
Claim 2
Dependent Claim
149 words
A multilayer laser diode comprising: an optical waveguide region having a quantum well layer and at least one high refractive index layer on each side of the quantum well layer, upper and lower cladding regions respectively on each side of the optical waveguide region, each such region having a first low refractive index layer adjacent to the high refractive index layer and a second refractive index layer formed adjacent to a first low refractive index layer and having an even lower refractive index than such first low refractive index layer; a lower buffer layer adjacent to the lower cladding region; a cap layer for providing an electrode and positioned adjacent to the cladding region; and the energy of the lasing light of the laser diode being selected tob e lower than the energy gap of the cap layer and lower buffer layer that are adjacent to the cladding regions.
Claim 3
Dependent Claim
23 words
The laser diode of claim 1 wherein the buffer and cap layers are made from GaAs and the quantum well layer is InGaAs.
Claim 4
Dependent Claim
23 words
The laser diode of claim 1 wherein the buffer and cap layers are made from InGaP and the quantum well layer is GaAs.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-08 | 1997-05-10 | 1997-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-08 | 2001-05-10 | 2001-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-08 | 2005-05-10 | 2005-11-09 | $7700.00 | Window Closed / Lapsed |