Quantum well semiconductor laser

Claim 2

A quantum well semiconductor laser, comprising: two first semiconductor layers; at least two second semiconductor layers provided between said fist layers and forming one quantum well; at least one third ultrafine semiconductor layer provided between said second semiconductor layers and having a thickness of no greater than a few atomic monolayers; a resonant cavity including the first, second and third semiconductor layers; and a power source connected to said first layers.

Claim 3

A laser according to claim 1, wherein the ultrafine third layers are preferably made of a material that is isoelectronic with the material of the second layers.

Claim 4

A laser according to claim 1, wherein the thickness of the ultrafine third layers is smaller than the critical thickness above which numerous dislocations exist at the interface between the second and third layers.

Claim 5

A laser according to claim 3, wherein the material of the ultrafine third layers is of the III-V group.

Claim 6

A laser according to claim 1, wherein dopant atoms chosen from among Si, Zn, Mg, Be are added to the ultrafine third layers.

Claim 7

A laser according to claim 1, with one ultrafine third layer, and two second layers of equal thickness.

Claim 8

A laser according to claim 1, with two ultrafine third layers, wherein the layers are positioned approximately at the position of the maximum values of the wave functions of the level n=2.

Claim 9

A laser according to claim 1, with three ultrafine third layers, wherein the central third layer is made of InAs and the other two are made of AlAs.

Claim 10

A laser according to claim 1, having a single quantum well structure with separate confinement.

Claim 11

A laser according to claim 1, having a single quantum well structure with separate optical confinement with index gradient through variable composition of the material of the optical cavity.

Claim 12

A laser according to claim 1, having a multiple quantum well structure with separate confinement.

Claim 13

A laser according to claim 1, having a multiple quantum well structure with separate optical confinement with index gradient through variable composition of the material of the optical cavity.

Claim 14

The laser according to claim 1, wherein said first layer is between 1000 and 2000 Å.

Claim 15

The laser according to claim 1, wherein said second layers have a thickness of 30 to 200 Å.

Claim 16

A laser according to claim 1, wherein a first one of the ultrafine layers is at a symmetrical center of the laser structure and has a thickness of 3Å, and two other ultrafine layers are at symmetrically opposite sides of the symmetrical center and have a thickness of 1.5Å.

Claim 17

A quantum well semiconductor laser, comprising: first layers composed of a first semiconductor material with a first band gap; second layers composed of a second semiconductor material, which is isoelectronic to said first material, with a second band gap which is larger than said first band gap, said first layers being between said second layers, thereby defining one quantum well having localized wave functions, each wave function characterized by an energy level of said one quantum well and a quantum number n of said one quantum well, wherein at least n=1 and n=2 energy levels exist in said well; at least one third ultrafine layer having a thickness which is less than the thickness of the quantum well and a position within said quantum well, whereby said third layer perturbs at least one of said localized wave functions more strongly than at least one other localized wave function; means to populate optically radiative states in said quantum well; and resonant cavity means positioned to provide optical gain from said radiative states.

Claim 18

A quantum well semiconductor laser, comprising: first layers composed of a first semiconductor material with a first band gap; second layers composed of a second semiconductor material, which is isoelectronic to said first material, with a second band gap which is larger than said first band gap, said first layers being between said second layers, thereby defining one quantum well having localized wave functions, each wave function characterized by an energy level of said one quantum well and a quantum number n of said one quantum well, wherein at least n=1 and n=2 energy levels exist in said well; at least one third ultrafine layer having a thickness which is less than the thickness of the quantum well and a position within said quantum well, whereby said third layer perturbs at least one of said localized wave functions more strongly than at least one other localized wave function; means to populate optically radiative states in said quantum well; and resonant cavity means positioned to provide optical gain from said radiative states.