US5374332A
Expired / Lapsed
US
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Method for etching silicon compound film and process for forming article by utilizing the method
Assignee: Canon Inc
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Filing: 1992-02-19
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Granted: 1994-12-20
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Expires: 2012-02-19
Abstract
Abstract A method for etching a silicon compound film comprises etching the silicon compound film in a gas flow rate ratio of CHF 3 to C 2 F 6 of 1 to 6 under etching pressure of 40 to 120 Pa.
Inventors
- 👤 Shuji Koyama
- 👤 Masami Kasamoto
- 👤 Makoto Shibata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:54
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12535
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
79 words
A method for etching a silicon compound film provided on a material comprising aluminum as positioned between an anode electrode and a cathode electrode, which comprises etching the silicon compound film in a gas flow rate ratio of CHF 3 gas to C 2 F 6 gas ranging from 1:1 to 6:1 under an etching pressure of 40 to 120 Pa and applying from about 150 to 500 W of power between said anode electrode and said cathode electrode.
Claim 2
Independent Claim
79 words
A method for etching a silicon compound film provided on a material comprising aluminum as positioned between an anode electrode and a cathode electrode, which comprises etching the silicon compound film in a gas flow rate ratio of CHF 3 gas to C 2 F 6 gas ranging from 1:1 to 6:1 under an etching pressure of 40 to 120 Pa and applying from about 150 to 500 W of power between said anode electrode and said cathode electrode.
Claim 3
Dependent Claim
21 words
A method according to claim 1, wherein the distance between the anode electrode and the cathode electrode is from 4.0-7.0 mm.
Claim 4
Dependent Claim
24 words
A method according to claim 1, wherein the silicon compound film contains silicon and at least one element selected from oxygen, nitrogen and carbon.
Claim 5
Dependent Claim
25 words
A method according to claim 3, wherein the silicon compound film is a film of material selected from silicon oxide, silicon nitride and silicon carbide.
Claim 6
Independent Claim
122 words
A method for etching a silicon compound film positioned between electrodes, which comprises placing an article to be treated between electrodes positioned to be from 4.0-7.0 mm apart in a treating space, the article comprising a material containing at least aluminum and a silicon compound film, introducing CHF 3 gas and C 2 F 6 gas into the treating space in a gas flow rate ratio of the CHF 3 gas to the C 2 F 6 gas ranging from 1:1 to 6:1, etching the silicon compound film under an inner pressure of 40 to 120 Pa in the treating space during the etching and applying from about 150 to 500 W of power between said anode electrode and said cathode electrode.
Claim 7
Independent Claim
122 words
A method for etching a silicon compound film positioned between electrodes, which comprises placing an article to be treated between electrodes positioned to be from 4.0-7.0 mm apart in a treating space, the article comprising a material containing at least aluminum and a silicon compound film, introducing CHF 3 gas and C 2 F 6 gas into the treating space in a gas flow rate ratio of the CHF 3 gas to the C 2 F 6 gas ranging from 1:1 to 6:1, etching the silicon compound film under an inner pressure of 40 to 120 Pa in the treating space during the etching and applying from about 150 to 500 W of power between said anode electrode and said cathode electrode.
Claim 8
Dependent Claim
24 words
A method according to claim 5, wherein the silicon compound film contains silicon and at least one element selected from oxygen, nitrogen and carbon.
Claim 9
Dependent Claim
25 words
A method according to claim 6, wherein the silicon compound film is a film of material selected from silicon oxide, silicon nitride and silicon carbide.
Claim 10
Dependent Claim
18 words
A method according to claim 5, wherein the silicon compound film is provided on the material containing Al.
Claim 11
Dependent Claim
18 words
A method according to claim 5, wherein the material containing Al is Al metal or an Al alloy.
Claim 12
Dependent Claim
25 words
A method according to claim 5, wherein at least one of an inert gas and H 2 gas is further introduced into the treating space.
Claim 13
Dependent Claim
13 words
A method according to claim 10, wherein the inert gas is He gas.
Claim 14
Dependent Claim
39 words
A method according to claim 10, wherein said at least one of the inert gas and H 2 gas is a gas for diluting at least one of the CHF 3 gas and the C 2 F 6 gas.
Claim 15
Dependent Claim
15 words
A method according to claim 5, wherein the interelectrode distance is 4.0 to 6.0 mm.
Claim 16
Dependent Claim
16 words
A method according to claim 5, wherein the gas flow rate ratio is 3 to 6.
Claim 17
Dependent Claim
14 words
A method according to claim 5, wherein the pressure is 40 to 100 Pa.
Claim 18
Independent Claim
142 words
A method for forming a product, which comprises placing an article to be treated between electrodes as positioned at an interelectrode distance of 4.0-7.0 mm in a treating space, the article to be treated comprising a material containing at least aluminum and a silicon compound film under a resist patterned in a desired shape, introducing CHF 3 gas and C 2 F 6 gas into a treating space in a gas flow rate ratio of the CHF 3 gas to the C 2 F 6 gas ranging from 1:1 to 6:1, etching the silicon compound film under an inner pressure of 40 to 120 Pa in the treating space during the etching and applying from about 150 to 500 W of power between said anode electrode and said cathode electrode, thereby patterning at least the silicon compound film in the desired shape.
Claim 19
Independent Claim
142 words
A method for forming a product, which comprises placing an article to be treated between electrodes as positioned at an interelectrode distance of 4.0-7.0 mm in a treating space, the article to be treated comprising a material containing at least aluminum and a silicon compound film under a resist patterned in a desired shape, introducing CHF 3 gas and C 2 F 6 gas into a treating space in a gas flow rate ratio of the CHF 3 gas to the C 2 F 6 gas ranging from 1:1 to 6:1, etching the silicon compound film under an inner pressure of 40 to 120 Pa in the treating space during the etching and applying from about 150 to 500 W of power between said anode electrode and said cathode electrode, thereby patterning at least the silicon compound film in the desired shape.
Claim 20
Dependent Claim
28 words
A method according to claim 16, further comprising, after patterning of the silicon compound film, providing a conductive layer at a desired position, thereby forming a multilayered wiring.
Claim 21
Dependent Claim
26 words
A method according to claim 17, further comprising providing a member for forming a liquid path and a discharge opening, thereby forming an ink jet head.
Claim 22
Dependent Claim
62 words
A method according to claim 16, further comprising electrically connecting the material containing aluminum to a heat-generating resistor member, and after the patterning of the silicon compound film, providing a cover member on the article to be treated, thereby forming an ink jet head having a liquid path and a discharge opening through which a liquid is discharged by utilizing heat energy.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-19 | 1998-06-20 | 1998-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-19 | 2002-06-20 | 2002-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-19 | 2006-06-20 | 2006-12-20 | $7700.00 | Window Closed / Lapsed |