US5372860A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon device production
Assignee: Corning Inc
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Filing: 1993-07-06
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Granted: 1994-12-13
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Expires: 2013-07-06
Abstract
Abstract A method for producing a glass panel for silicon device fabrication, which method comprises forming a noncrystalline, or mixed-phase, silicon film on a glass substrate, the glass having a strain point greater than 560 DEG C., and subjecting the filmed glass to a heat treatment comprising heating at a temperature of at least 550 DEG C. for a period of time sufficient to convert the silicon film to polycrystalline silicon and to compact the glass.
Inventors
- 👤 Francis P. Fehlner
- 👤 Paul A. Sachenik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:28
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/36; H10P14/38; H10P14/3802
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
101 words
A method of producing a glass panel for a LCD device consisting of a polycrystalline silicon film on a compacted glass substrate, said glass having a strain point of at least 560° C., comprising the steps of: (a) heating said glass substrate to a temperature of at least 550° C. for a period of time sufficient to compact the glass; (b) applying a noncrystalline, or mixed-phase, silicon film on said glass substrate; and thereafter (c) heating said glass substrate to a temperature of at least 550° C. for a period of time sufficient to convert the silicon film to polycrystalline silicon.
Claim 2
Independent Claim
101 words
A method of producing a glass panel for a LCD device consisting of a polycrystalline silicon film on a compacted glass substrate, said glass having a strain point of at least 560° C., comprising the steps of: (a) heating said glass substrate to a temperature of at least 550° C. for a period of time sufficient to compact the glass; (b) applying a noncrystalline, or mixed-phase, silicon film on said glass substrate; and thereafter (c) heating said glass substrate to a temperature of at least 550° C. for a period of time sufficient to convert the silicon film to polycrystalline silicon.
Claim 3
Dependent Claim
23 words
A method in accordance with claim 1 wherein the noncrystalline, or mixed-phase, silicon film is applied in the temperature range of 300°-560° C.
Claim 4
Dependent Claim
22 words
A method in accordance with claim 1 wherein the noncrystalline, or mixed-phase, silicon film is in the range of 100-200 nm thick.
Claim 5
Dependent Claim
15 words
A method in accordance with claim 1 wherein the silicon film is doped with fluorine.
Claim 6
Dependent Claim
27 words
A method in accordance with claim 1 wherein the silicon film is subjected to a heat treatment sufficient to grow crystals in size range of 200-1000 nm.
Claim 7
Dependent Claim
37 words
A method in accordance with claim 1 wherein a barrier layer film is deposited intermediate to the silicon film and the glass to prevent migration of sodium ions and reaction of the silicon layer with the glass.
Claim 8
Dependent Claim
15 words
A method in accordance with claim 6 wherein the barrier layer is composed of silica.
Claim 9
Dependent Claim
22 words
A method in accordance with claim 1 wherein a protective layer of silica is deposited over the noncrystalline, or mixed-phase, silicon film.
Claim 10
Dependent Claim
29 words
A method in accordance with claim 1 wherein the temperature employed to compact the glass is no lower than about 10° C. below the strain point of the glass.
Claim 11
Dependent Claim
19 words
A method in accordance with claim 1 which comprises applying the noncrystalline, or mixed phase, silicon film by PECVD.
Claim 12
Dependent Claim
46 words
A method in accordance with claim 1 which comprises heating the glass substrate for a period of time sufficient to form, in the noncrystalline, or mixed-phase, silicon film crystals wherein the grain size equals the length of the gate region divided by the number of grains.
Claim 13
Independent Claim
92 words
A method of producing a glass panel for an LCD device comprising polycrystalline silicon film on a compacted glass substrate, the glass having a strain point greater than 560° C., comprising the steps of: (a) applying a noncrystalline, or mixed-phase, silicon film on the glass substrate, (b) heating the filmed glass substrate to a temperature of at least 550° C., (c) holding the filmed glass substrate at such temperature for a period of time sufficient to both convert the silicon film to a polycrystalline silicon film, and to compact the glass substrate.
Claim 14
Independent Claim
92 words
A method of producing a glass panel for an LCD device comprising polycrystalline silicon film on a compacted glass substrate, the glass having a strain point greater than 560° C., comprising the steps of: (a) applying a noncrystalline, or mixed-phase, silicon film on the glass substrate, (b) heating the filmed glass substrate to a temperature of at least 550° C., (c) holding the filmed glass substrate at such temperature for a period of time sufficient to both convert the silicon film to a polycrystalline silicon film, and to compact the glass substrate.
Claim 15
Dependent Claim
113 words
In a method of producing a glass panel for an LCD device, the glass having a strain point of at least 560° C., which comprises compacting the glass in a first heat treatment, applying a non-crystalline, or mixed-phase, silicon film to the compacted glass, and converting the silicon film to a polysilicon film in a second heat treatment, the improvement which comprises applying the non-crystalline, or mixed-phase silicon film to an uncompacted glass panel, heating the silicon-filmed glass panel to a temperature of at least 550° C., and holding the glass panel at that temperature for a time sufficient to both compact the glass and to convert the silicon to a polysilicon film.
Claim 16
Dependent Claim
113 words
In a method of producing a glass panel for an LCD device, the glass having a strain point of at least 560° C., which comprises compacting the glass in a first heat treatment, applying a non-crystalline, or mixed-phase, silicon film to the compacted glass, and converting the silicon film to a polysilicon film in a second heat treatment, the improvement which comprises applying the non-crystalline, or mixed-phase silicon film to an uncompacted glass panel, heating the silicon-filmed glass panel to a temperature of at least 550° C., and holding the glass panel at that temperature for a time sufficient to both compact the glass and to convert the silicon to a polysilicon film.
Claim 17
Dependent Claim
24 words
A method in accordance with claim 1 wherein the temperature of the heating step is less than 62° C. above the glass strain point.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-12 | 1998-06-13 | 1998-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-12 | 2002-06-13 | 2002-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-12 | 2006-06-13 | 2006-12-13 | $7700.00 | Window Closed / Lapsed |