Patent US5372842A successfully refreshed from Google Patents.
US5372842A
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Method for the formation of a silicon oxide film
Assignee: Dow Silicones Corp
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Filing: 1993-10-29
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Granted: 1994-12-13
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Expires: 2013-10-29
Abstract
Abstract Disclosed is a method for the formation of a thick silicon oxide film which is insoluble in organic solvents and free of cracks and pinholes on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate, converting the hydrogen silsesquioxane resin into preceramic silicon oxide by heating in an inert gas atmosphere, and converting the preceramic silicon oxide into silicon oxide ceramic by heating in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas.
Inventors
- 👤 Katsutoshi Mine
- 👤 Takashi Nakamura
- 👤 Motoshi Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 05:15
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/80; C04B41/81; C04B41/85; C04B41/87; H; H10; H10P; H10P14/00; H10P14/60; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/27; C04B41/009; C04B41/45; C04B41/50; C04B41/5025; C04B41/5035; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1212; C23C18/122; C23C18/125; C23C18/1275; C23C18/1279; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/213; C03C2218/00; C03C2218/30; C03C2218/32; C03C2218/322; C04B2111/00; C04B2111/00474; C04B2111/00844
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
104 words
A method for the formation of a silicon oxide film comprising: forming a hydrogen silsesquioxane resin film on the surface of a substrate; converting the hydrogen silsesquioxane resin into preceramic silicon oxide by heating the resin film-bearing substrate in an inert gas atmosphere; and converting the preceramic silicon oxide into silicon oxide ceramic by heating the substrate bearing the preceramic silicon oxide in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 2
Independent Claim
104 words
A method for the formation of a silicon oxide film comprising: forming a hydrogen silsesquioxane resin film on the surface of a substrate; converting the hydrogen silsesquioxane resin into preceramic silicon oxide by heating the resin film-bearing substrate in an inert gas atmosphere; and converting the preceramic silicon oxide into silicon oxide ceramic by heating the substrate bearing the preceramic silicon oxide in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein the heating temperature for converting the hydrogen silsesquioxane resin into preceramic silicon oxide under inert gas is at least 250° C.
Claim 4
Dependent Claim
24 words
The method of claim 1 wherein the heating temperature for converting the preceramic silicon oxide into silicon oxide ceramic is at least 250° C.
Claim 5
Dependent Claim
50 words
The method of claim 1 wherein the hydrogen silsesquioxane resin film is formed on the surface of the substrate by preparing an organic solvent solution of the hydrogen silsesquioxane resin, applying this solution by a method selected from the group consisting of spin-coating, spraying, or immersion, and removing the solvent.
Claim 6
Dependent Claim
27 words
The method of claim 4 wherein the organic solvent is selected from the group consisting of aromatic solvents, aliphatic solvents, ketone solvents, ester solvents, and silicone solvents.
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein the substrates is selected from the group consisting of glass substrates, ceramic substrates, metal substrates, and semiconductor devices.
Claim 8
Dependent Claim
21 words
The method of claim 1 wherein the inert gas is selected from the group consisting of nitrogen, argon, helium, and neon.
Claim 9
Dependent Claim
32 words
The method of claim 1 wherein the heating temperature for converting the hydrogen silsesquioxane resin into preceramic silicon oxide under inert gas is in the range of 250° C. to 500° C.
Claim 10
Dependent Claim
29 words
The method of claim 1 wherein the heating temperature for converting tile preceramic silicon oxide into silicon oxide ceramic is in the range of 250° C. to 500° C.
Claim 11
Independent Claim
118 words
A method for the formation of a silicon oxide film wherein said method is characterized by the formation of a hydrogen silsesquioxane resin film on the surface of a semiconductor device, the conversion of said hydrogen silsesquioxane resin into preceramic silicon oxide by heating the resin film-bearing semiconductor device in an inert gas atmosphere, and the subsequent conversion of the preceramic silicon oxide into silicon oxide ceramic by heating said substrate bearing the preceramic silicon oxide in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 12
Independent Claim
118 words
A method for the formation of a silicon oxide film wherein said method is characterized by the formation of a hydrogen silsesquioxane resin film on the surface of a semiconductor device, the conversion of said hydrogen silsesquioxane resin into preceramic silicon oxide by heating the resin film-bearing semiconductor device in an inert gas atmosphere, and the subsequent conversion of the preceramic silicon oxide into silicon oxide ceramic by heating said substrate bearing the preceramic silicon oxide in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 13
Independent Claim
124 words
A method for the formation of a silicon oxide film wherein said method is characterized by planarization of the topographical variations on the surface of a semiconductor device by the formation thereon of a hydrogen silsesquioxane resin film, conversion of said hydrogen silsesquioxane resin into preceramic silicon oxide by heating the resin film-bearing semiconductor device in an inert gas atmosphere, and subsequent conversion of the preceramic silicon oxide into silicon oxide ceramic by heating said substrate bearing the preceramic silicon oxide in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the aforesaid hydrogen silsesquioxane resin.
Claim 14
Independent Claim
124 words
A method for the formation of a silicon oxide film wherein said method is characterized by planarization of the topographical variations on the surface of a semiconductor device by the formation thereon of a hydrogen silsesquioxane resin film, conversion of said hydrogen silsesquioxane resin into preceramic silicon oxide by heating the resin film-bearing semiconductor device in an inert gas atmosphere, and subsequent conversion of the preceramic silicon oxide into silicon oxide ceramic by heating said substrate bearing the preceramic silicon oxide in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the aforesaid hydrogen silsesquioxane resin.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-12 | 1998-06-13 | 1998-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-12 | 2002-06-13 | 2002-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-12 | 2006-06-13 | 2006-12-13 | $7700.00 | Window Closed / Lapsed |