Patent US4375769A successfully refreshed from Google Patents.
Patent US5371383A successfully refreshed from Google Patents.
US5371383A
Expired / Lapsed
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Highly oriented diamond film field-effect transistor
Assignee: Kobe Steel USA Inc
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Filing: 1993-05-14
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Granted: 1994-12-06
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Expires: 2013-05-14
Abstract
Abstract A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposition, and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences { DELTA alpha , DELTA beta , DELTA gamma } of Euler angles { alpha , beta , gamma }, which represent the orientations of either (100) or (111) crystal planes, simultaneously satisfy the following relations between the adjacent crystal planes: | DELTA alpha |</=5 DEG , | DELTA beta |</=5 DEG and | DELTA gamma |</=5 DEG .
Inventors
- 👤 Koichi Miyata
- 👤 Kimitsugu Saito
- 👤 David L. Dreifus
- 👤 Brian R. Stoner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:53
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/60; H10D30/63; H10D30/635; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/80; H10D62/83; H10D62/8303; Y; Y10; Y10T; Y10T428/00; Y10T428/30
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
131 words
A diamond film field-effect transistor comprising; a gate electrode formed on a semiconducting diamond layer; a source region and a drain region formed on said semiconducting diamond layer; and said semiconducting diamond layer having a channel region adjacent said gate electrode and extending between said source and drain regions, said semiconducting diamond layer comprising a highly-oriented diamond film in which at least 80% of the surface area of said diamond film consists of a plurality of (100) crystal planes having Euler angles differences therebetween which are {Δα, Δβ, Δγ}, said crystal planes being oriented relative to one another so that the differences {Δα, Δβ, Δγ} of respective Euler angles {α, β, γ}, which represent the orientations of the (100) crystal planes simultaneously satisfy 0°<|Δα|≦5°, 0°<|Δβ|≦5° and 0°<|Δγ|≦5° between adjacent crystal planes.
Claim 2
Dependent Claim
131 words
A diamond film field-effect transistor comprising; a gate electrode formed on a semiconducting diamond layer; a source region and a drain region formed on said semiconducting diamond layer; and said semiconducting diamond layer having a channel region adjacent said gate electrode and extending between said source and drain regions, said semiconducting diamond layer comprising a highly-oriented diamond film in which at least 80% of the surface area of said diamond film consists of a plurality of (100) crystal planes having Euler angles differences therebetween which are {Δα, Δβ, Δγ}, said crystal planes being oriented relative to one another so that the differences {Δα, Δβ, Δγ} of respective Euler angles {α, β, γ}, which represent the orientations of the (100) crystal planes simultaneously satisfy 0°<|Δα|≦5°, 0°<|Δβ|≦5° and 0°<|Δγ|≦5° between adjacent crystal planes.
Claim 3
Dependent Claim
28 words
A diamond film field-effect transistor according to claim 1 further comprising an insulating diamond basal layer provided under said semiconducting diamond layer formed of said highly-oriented diamond film.
Claim 4
Dependent Claim
25 words
A diamond film field-effect transistor according to claim 1 further comprising a diamond insulating layer formed between the semiconducting diamond layer and the gate electrode.
Claim 5
Dependent Claim
25 words
A diamond film field-effect transistor according to claim 1 further comprising a non-diamond insulating layer formed between the semiconducting diamond layer and the gate electrode.
Claim 6
Dependent Claim
36 words
A diamond film field-effect transistor according to claim 4 wherein said non-diamond insulating layer is made of a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride and zirconium oxide.
Claim 7
Dependent Claim
38 words
A diamond film field-effect transistor according to claim 1 further comprising a double layer having a non-diamond insulating layer and a diamond insulating layer, the double layer being provided between the semiconducting diamond layer and the gate electrode.
Claim 8
Dependent Claim
36 words
A diamond film field-effect transistor according to claim 6 wherein said non-diamond insulating layer is made of a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride and zirconium oxide.
Claim 9
Dependent Claim
54 words
A diamond film field-effect transistor according to claim 1 further comprising respective source and drain electrodes on said source and drain regions, and wherein said source and drain regions each comprise a heavily doped semiconducting diamond layer with a lower resistance than that of the semiconducting diamond layer formed of said highly-oriented diamond film.
Claim 10
Dependent Claim
131 words
A diamond film field-effect transistor comprising; a gate electrode formed on a semiconducting diamond layer; a source region and a drain region formed on said semiconducting diamond layer; and said semiconducting diamond layer having a channel region adjacent said gate electrode and extending between said source and drain regions, said semiconducting diamond layer comprising a highly-oriented diamond film in which at least 80% of the surface area of said diamond film consists of a plurality of (111) crystal planes having Euler angles differences therebetween which are {Δα, Δβ, Δγ}, said crystal planes being oriented relative to one another so that the differences {Δα, Δβ, Δγ} of respective Euler angles {α, β, γ}, which represent the orientations of the (111) crystal planes simultaneously satisfy 0°<|Δα|≦5°, 0°<|Δβ|≦5° and 0°<|Δγ|≦5° between adjacent crystal planes.
Claim 11
Dependent Claim
131 words
A diamond film field-effect transistor comprising; a gate electrode formed on a semiconducting diamond layer; a source region and a drain region formed on said semiconducting diamond layer; and said semiconducting diamond layer having a channel region adjacent said gate electrode and extending between said source and drain regions, said semiconducting diamond layer comprising a highly-oriented diamond film in which at least 80% of the surface area of said diamond film consists of a plurality of (111) crystal planes having Euler angles differences therebetween which are {Δα, Δβ, Δγ}, said crystal planes being oriented relative to one another so that the differences {Δα, Δβ, Δγ} of respective Euler angles {α, β, γ}, which represent the orientations of the (111) crystal planes simultaneously satisfy 0°<|Δα|≦5°, 0°<|Δβ|≦5° and 0°<|Δγ|≦5° between adjacent crystal planes.
Claim 12
Dependent Claim
28 words
A diamond film field-effect transistor according to claim 9 further comprising an insulating diamond basal layer provided under said semiconducting diamond layer formed of said highly-oriented diamond film.
Claim 13
Dependent Claim
25 words
A diamond film field-effect transistor according to claim 9 further comprising a diamond insulating layer formed between the semiconducting diamond layer and the gate electrode.
Claim 14
Dependent Claim
25 words
A diamond film filed-effect transistor according to claim 9 further comprising a non-diamond insulating layer formed between the semiconducting diamond layer and the gate electrode.
Claim 15
Dependent Claim
36 words
A diamond film field-effect transistor according to claim 12 wherein said non-diamond insulating layer is made of a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride and zirconium oxide.
Claim 16
Dependent Claim
38 words
A diamond film field-effect transistor according to claim 9 further comprising a double layer having a non-diamond insulating layer and a diamond insulating layer, the double layer being provided between the semiconducting diamond layer and the gate electrode.
Claim 17
Dependent Claim
36 words
A diamond film field-effect transistor according to claim 14 wherein said non-diamond insulating layer is made of a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride and zirconium oxide.
Claim 18
Dependent Claim
54 words
A diamond film field-effect transistor according to claim 9 further comprising respective source and drain electrodes on said source and drain regions, and wherein said source and drain regions each comprise a heavily doped semiconducting diamond layer with a lower resistance than that of the semiconducting diamond layer formed of said highly-oriented diamond film.
References Cited (Backward Citations)
JPS59137396A
Cited
JPS6012747A
Cited
US4670968A
Cited
JPS61251158A
Cited
US4806900A
Cited
JPS6455862A
Cited
JPS6468966A
Cited
JPH01158774A
Cited
JPH02273960A
Cited
JPH0312966A
Cited
US5089802A
Cited
JPH0394429A
Cited
US5183530A
Cited
US5086014A
Cited
JPH03110866A
Cited
EP0421397A1
Cited
JPH03120865A
Cited
US5066938A
Cited
JPH03160731A
Cited
JPH03278474A
Cited
EP0445998A1
Cited
JPH03263872A
Cited
GB2243949A
Cited
US5126206A
Cited
JPH03278463A
Cited
JPH0426172A
Cited
JPH0426161A
Cited
US5124179A
Cited
GB2252202A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-05 | 1998-06-06 | 1998-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-05 | 2002-06-06 | 2002-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-05 | 2006-06-06 | 2006-12-06 | $7700.00 | Window Closed / Lapsed |