US5371383A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Highly oriented diamond film field-effect transistor
Assignee: Kobe Steel USA Inc
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Filing: 1993-05-14
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Granted: 1994-12-06
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Expires: 2013-05-14
Abstract
Abstract A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposition, and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences { DELTA alpha , DELTA beta , DELTA gamma } of Euler angles { alpha , beta , gamma }, which represent the orientations of either (100) or (111) crystal planes, simultaneously satisfy the following relations between the adjacent crystal planes: | DELTA alpha |</=5 DEG , | DELTA beta |</=5 DEG and | DELTA gamma |</=5 DEG .
Inventors
- 👤 Koichi Miyata
- 👤 Kimitsugu Saito
- 👤 David L. Dreifus
- 👤 Brian R. Stoner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:41
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/60; H10D30/63; H10D30/635; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/80; H10D62/83; H10D62/8303; Y; Y10; Y10T; Y10T428/00; Y10T428/30
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
131 words
A diamond film field-effect transistor comprising; a gate electrode formed on a semiconducting diamond layer; a source region and a drain region formed on said semiconducting diamond layer; and said semiconducting diamond layer having a channel region adjacent said gate electrode and extending between said source and drain regions, said semiconducting diamond layer comprising a highly-oriented diamond film in which at least 80% of the surface area of said diamond film consists of a plurality of (100) crystal planes having Euler angles differences therebetween which are {Δα, Δβ, Δγ}, said crystal planes being oriented relative to one another so that the differences {Δα, Δβ, Δγ} of respective Euler angles {α, β, γ}, which represent the orientations of the (100) crystal planes simultaneously satisfy 0°<|Δα|≦5°, 0°<|Δβ|≦5° and 0°<|Δγ|≦5° between adjacent crystal planes.
Claim 2
Dependent Claim
131 words
A diamond film field-effect transistor comprising; a gate electrode formed on a semiconducting diamond layer; a source region and a drain region formed on said semiconducting diamond layer; and said semiconducting diamond layer having a channel region adjacent said gate electrode and extending between said source and drain regions, said semiconducting diamond layer comprising a highly-oriented diamond film in which at least 80% of the surface area of said diamond film consists of a plurality of (100) crystal planes having Euler angles differences therebetween which are {Δα, Δβ, Δγ}, said crystal planes being oriented relative to one another so that the differences {Δα, Δβ, Δγ} of respective Euler angles {α, β, γ}, which represent the orientations of the (100) crystal planes simultaneously satisfy 0°<|Δα|≦5°, 0°<|Δβ|≦5° and 0°<|Δγ|≦5° between adjacent crystal planes.
Claim 3
Dependent Claim
28 words
A diamond film field-effect transistor according to claim 1 further comprising an insulating diamond basal layer provided under said semiconducting diamond layer formed of said highly-oriented diamond film.
Claim 4
Dependent Claim
25 words
A diamond film field-effect transistor according to claim 1 further comprising a diamond insulating layer formed between the semiconducting diamond layer and the gate electrode.
Claim 5
Dependent Claim
25 words
A diamond film field-effect transistor according to claim 1 further comprising a non-diamond insulating layer formed between the semiconducting diamond layer and the gate electrode.
Claim 6
Dependent Claim
36 words
A diamond film field-effect transistor according to claim 4 wherein said non-diamond insulating layer is made of a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride and zirconium oxide.
Claim 7
Dependent Claim
38 words
A diamond film field-effect transistor according to claim 1 further comprising a double layer having a non-diamond insulating layer and a diamond insulating layer, the double layer being provided between the semiconducting diamond layer and the gate electrode.
Claim 8
Dependent Claim
36 words
A diamond film field-effect transistor according to claim 6 wherein said non-diamond insulating layer is made of a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride and zirconium oxide.
Claim 9
Dependent Claim
54 words
A diamond film field-effect transistor according to claim 1 further comprising respective source and drain electrodes on said source and drain regions, and wherein said source and drain regions each comprise a heavily doped semiconducting diamond layer with a lower resistance than that of the semiconducting diamond layer formed of said highly-oriented diamond film.
Claim 10
Dependent Claim
131 words
A diamond film field-effect transistor comprising; a gate electrode formed on a semiconducting diamond layer; a source region and a drain region formed on said semiconducting diamond layer; and said semiconducting diamond layer having a channel region adjacent said gate electrode and extending between said source and drain regions, said semiconducting diamond layer comprising a highly-oriented diamond film in which at least 80% of the surface area of said diamond film consists of a plurality of (111) crystal planes having Euler angles differences therebetween which are {Δα, Δβ, Δγ}, said crystal planes being oriented relative to one another so that the differences {Δα, Δβ, Δγ} of respective Euler angles {α, β, γ}, which represent the orientations of the (111) crystal planes simultaneously satisfy 0°<|Δα|≦5°, 0°<|Δβ|≦5° and 0°<|Δγ|≦5° between adjacent crystal planes.
Claim 11
Dependent Claim
131 words
A diamond film field-effect transistor comprising; a gate electrode formed on a semiconducting diamond layer; a source region and a drain region formed on said semiconducting diamond layer; and said semiconducting diamond layer having a channel region adjacent said gate electrode and extending between said source and drain regions, said semiconducting diamond layer comprising a highly-oriented diamond film in which at least 80% of the surface area of said diamond film consists of a plurality of (111) crystal planes having Euler angles differences therebetween which are {Δα, Δβ, Δγ}, said crystal planes being oriented relative to one another so that the differences {Δα, Δβ, Δγ} of respective Euler angles {α, β, γ}, which represent the orientations of the (111) crystal planes simultaneously satisfy 0°<|Δα|≦5°, 0°<|Δβ|≦5° and 0°<|Δγ|≦5° between adjacent crystal planes.
Claim 12
Dependent Claim
28 words
A diamond film field-effect transistor according to claim 9 further comprising an insulating diamond basal layer provided under said semiconducting diamond layer formed of said highly-oriented diamond film.
Claim 13
Dependent Claim
25 words
A diamond film field-effect transistor according to claim 9 further comprising a diamond insulating layer formed between the semiconducting diamond layer and the gate electrode.
Claim 14
Dependent Claim
25 words
A diamond film filed-effect transistor according to claim 9 further comprising a non-diamond insulating layer formed between the semiconducting diamond layer and the gate electrode.
Claim 15
Dependent Claim
36 words
A diamond film field-effect transistor according to claim 12 wherein said non-diamond insulating layer is made of a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride and zirconium oxide.
Claim 16
Dependent Claim
38 words
A diamond film field-effect transistor according to claim 9 further comprising a double layer having a non-diamond insulating layer and a diamond insulating layer, the double layer being provided between the semiconducting diamond layer and the gate electrode.
Claim 17
Dependent Claim
36 words
A diamond film field-effect transistor according to claim 14 wherein said non-diamond insulating layer is made of a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride and zirconium oxide.
Claim 18
Dependent Claim
54 words
A diamond film field-effect transistor according to claim 9 further comprising respective source and drain electrodes on said source and drain regions, and wherein said source and drain regions each comprise a heavily doped semiconducting diamond layer with a lower resistance than that of the semiconducting diamond layer formed of said highly-oriented diamond film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-12-05 | 1998-06-06 | 1998-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-05 | 2002-06-06 | 2002-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-05 | 2006-06-06 | 2006-12-06 | $7700.00 | Window Closed / Lapsed |