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US5370903A
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Method for the formation of a silicon oxide film
Assignee: Dow Silicones Corp
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Filing: 1993-10-29
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Granted: 1994-12-06
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Expires: 2013-10-29
Abstract
Abstract Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate followed by converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 vol % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Inventors
- 👤 Katsutoshi Mine
- 👤 Takashi Nakamura
- 👤 Motoshi Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 02:18
CPC Classifications
C; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/25; C03C17/28; C03C17/30; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/5025; C04B41/5035; C04B41/80; C04B41/81; C04B41/85; C04B41/87; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/125; C23C18/1275; H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6529; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6925; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/213; C03C2218/00; C03C2218/30; C03C2218/32; C04B2111/00; C04B2111/00474; C04B2111/00844; C23C18/1204; C23C18/1208; C23C18/1212; C23C18/122; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69215
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
95 words
A method for the formation of a silicon oxide film comprising: forming a hydrogen silsesquioxane resin film on the surface of a substrate; and converting the hydrogen silsesquioxane resin into a silicon oxide ceramic by heating the resin film-bearing substrate in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 volume % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 2
Independent Claim
95 words
A method for the formation of a silicon oxide film comprising: forming a hydrogen silsesquioxane resin film on the surface of a substrate; and converting the hydrogen silsesquioxane resin into a silicon oxide ceramic by heating the resin film-bearing substrate in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 volume % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 3
Dependent Claim
50 words
The method of claim 1 wherein the hydrogen silsesquioxane resin film is formed on the surface of the substrate by preparing an organic solvent solution of the hydrogen silsesquioxane resin, applying this solution by a method selected from the group consisting of spin-coating, spraying, and immersion, and removing the solvent.
Claim 4
Dependent Claim
26 words
The method of claim 2 wherein the solvent is selected from the group consisting of aromatic solvents, aliphatic solvents, ketone solvents, ester solvents, and silicone solvents.
Claim 5
Dependent Claim
24 words
The method of claim 1 wherein the substrate is selected from the group consisting of glass substrates, ceramic substrates, metal substrates, and semiconductor devices.
Claim 6
Dependent Claim
25 words
The method of claim 1 wherein the inert gas is selected from the group consisting of nitrogen gas, argon gas, helium gas, and neon gas.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein the oxygen content is between 1 volume % and 19 volume %.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein the heating temperature is in the range of 250° C. to 500° C.
Claim 9
Dependent Claim
36 words
The method of claim 1 wherein the heat time is sufficient to lower the content of silicon-bonded hydrogen in the silicon oxide product to 15-80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 10
Independent Claim
105 words
A method for the formation of a silicon oxide film wherein said method is characterized by the formation of a hydrogen silsesquioxane resin film on the surface of a semiconductor device and subsequent conversion of said hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing semiconductor device in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 volume % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in tile hydrogen silsesquioxane resin.
Claim 11
Independent Claim
105 words
A method for the formation of a silicon oxide film wherein said method is characterized by the formation of a hydrogen silsesquioxane resin film on the surface of a semiconductor device and subsequent conversion of said hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing semiconductor device in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 volume % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in tile hydrogen silsesquioxane resin.
Claim 12
Independent Claim
113 words
A method for the formation of a silicon oxide film wherein said method is characterized by the planarization of the topographical variations on the surface of a semiconductor device by the formation thereon of a hydrogen silsesquioxane resin film, and subsequent conversion of said hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing semiconductor device in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 volume % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 13
Independent Claim
113 words
A method for the formation of a silicon oxide film wherein said method is characterized by the planarization of the topographical variations on the surface of a semiconductor device by the formation thereon of a hydrogen silsesquioxane resin film, and subsequent conversion of said hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing semiconductor device in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 volume % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-05 | 1998-06-06 | 1998-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-05 | 2002-06-06 | 2002-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-05 | 2006-06-06 | 2006-12-06 | $7700.00 | Window Closed / Lapsed |