Abstract A semiconductor integrated circuit fabrication method for designing and fabricating semiconductor circuit elements on a semiconductor substrate for a LSI, which comprises the steps of: drawing a semiconductor circuit diagram by arranging standard cells for the semiconductor circuit elements and wiring among the standard cells by using a standard cell design method; describing circuit description net statements based on the semiconductor circuit diagram; arranging and wiring the standard cells to one another; converting the standard cells into symbolic cells with a one-to-one correspondence to generate a symbolic cell layout; generating a stick diagram in accordance with the symbolic cell layout; changing the dimensions of each transistor in the symbolic cell, overlapping contact areas, vias among them, and wires between adjacent transistors in the symbolic cells as a common area, where possible, shortening the length of wire in the transistor, and changing the sliding of the contact area, the vias, and the wire of the transistor to obtain the minimum area for the transistor; forming a mask pattern in accordance with the arranging and wiring of the symbolic cells obtained by the above steps; and forming the semiconductor circuit elements and wiring among the semiconductor circuit elements on the semiconductor substrate by using the mask pattern.
Inventors
👤 Takeji Tokumaru
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-28 00:04
CPC Classifications
G; G06; G06F; G06F30/00; G06F30/30; G06F30/39
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
202 words
A semiconductor integrated circuit fabrication method for designing and fabricating semiconductor circuit elements on a semiconductor substrate for a LSI circuit, comprising the steps of: drawing a semiconductor circuit diagram by arranging standard cells for the semiconductor circuit elements and wiring among the standard cells by using a standard cell design method; describing circuit description net statements based on the semiconductor circuit diagram; arranging and wiring the standard cells to one another; converting the standard cells into symbolic cells with a one-to-one correspondence to generate a symbolic cell layout; generating a stick diagram in accordance with the symbolic cell layout; changing the dimensions of each transistor in the symbolic cell, overlapping common areas of contact areas, vias among them, and wires between adjacent transistors in the symbolic cells, shortening the length of wire in a transistor, and changing a position of the contact area, the vias, and the wire of the transistor to obtain the minimum area for the transistor; forming a mask pattern in accordance with the arranging and wiring of the symbolic cells obtained by the above steps; and forming the semiconductor circuit elements and wiring among the semiconductor circuit elements on the semiconductor substrate by using the mask pattern.
Claim 2
Dependent Claim
202 words
A semiconductor integrated circuit fabrication method for designing and fabricating semiconductor circuit elements on a semiconductor substrate for a LSI circuit, comprising the steps of: drawing a semiconductor circuit diagram by arranging standard cells for the semiconductor circuit elements and wiring among the standard cells by using a standard cell design method; describing circuit description net statements based on the semiconductor circuit diagram; arranging and wiring the standard cells to one another; converting the standard cells into symbolic cells with a one-to-one correspondence to generate a symbolic cell layout; generating a stick diagram in accordance with the symbolic cell layout; changing the dimensions of each transistor in the symbolic cell, overlapping common areas of contact areas, vias among them, and wires between adjacent transistors in the symbolic cells, shortening the length of wire in a transistor, and changing a position of the contact area, the vias, and the wire of the transistor to obtain the minimum area for the transistor; forming a mask pattern in accordance with the arranging and wiring of the symbolic cells obtained by the above steps; and forming the semiconductor circuit elements and wiring among the semiconductor circuit elements on the semiconductor substrate by using the mask pattern.