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US5369055A
Expired / Lapsed
US
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Method for fabricating titanium silicide contacts
Assignee: MagnaChip Semiconductor Ltd
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Filing: 1993-06-04
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Granted: 1994-11-29
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Expires: 2013-06-04
Abstract
Abstract A method for fabricating titanium silicide contacts wherein prior to a Ti sputtering process, ions having a conductivity opposite to the conductivity of source and drain regions on each well are implanted in the source and drain regions by using the same mask as used in the Ti sputtering process, so as to form low concentration regions at contact surfaces and high concentration regions at regions beneath the contact surfaces.
Inventors
- 👤 Ji H. Chung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0212; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/20; H10D64/23; H10D64/251; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0149; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S148/147
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
158 words
A method for fabricating titanium silicide contacts on high concentration source and drain regions, comprising the steps: depositing an insulating film over an entire exposed upper surface of a structure including the source and drain regions and then forming contact holes through which the source and drain regions are partially exposed; implanting, in surfaces of the exposed portions of the source and drain regions as high concentration active regions, impurity ions with a conductivity opposite to a conductivity of the source and drain regions, the impurity with the opposite conductivity implanted in the source and drain regions is BF 2 ; depositing a titanium film over each of the source and drain region portions implanted with the impurity ions of the opposite conductivity; and heat treating the titanium film, to form a titanium silicide film, and forming a metal contact on the titanium silicide film, the metal contact capable of enhancing a contact resistance and a delay characteristic.
Claim 2
Independent Claim
158 words
A method for fabricating titanium silicide contacts on high concentration source and drain regions, comprising the steps: depositing an insulating film over an entire exposed upper surface of a structure including the source and drain regions and then forming contact holes through which the source and drain regions are partially exposed; implanting, in surfaces of the exposed portions of the source and drain regions as high concentration active regions, impurity ions with a conductivity opposite to a conductivity of the source and drain regions, the impurity with the opposite conductivity implanted in the source and drain regions is BF 2 ; depositing a titanium film over each of the source and drain region portions implanted with the impurity ions of the opposite conductivity; and heat treating the titanium film, to form a titanium silicide film, and forming a metal contact on the titanium silicide film, the metal contact capable of enhancing a contact resistance and a delay characteristic.
Claim 3
Dependent Claim
59 words
A method in accordance with claim 1, wherein the step of heat treating the titanium film comprises the steps of primarily heat treating the titanium film, to form the titanium silicide film, etching the titanium film, to remove it, and secondarily heat treating each portion of the source and drain regions over which the titanium silicide film is disposed.
Claim 4
Dependent Claim
36 words
A method in accordance with claim 2, wherein a heat treatment temperature at the step of secondarily heat treating each portion of the source and drain regions is in a range of 800° to 900° C.
Claim 5
Dependent Claim
49 words
A method in accordance with claim 1, wherein the step of forming the metal contact on the titanium silicide film comprises the steps of depositing, over the titanium silicide film, a film of TiN as an etch barrier material , and depositing a metal layer over the TiN film.
Claim 6
Dependent Claim
19 words
A method in accordance with claim 3, wherein the TiN film has a thickness of 500 to 900 Å.
Claim 7
Dependent Claim
30 words
A method in accordance with claim 1, wherein a heat treatment temperature at the step of heat treating the titanium film is in a range of 600° to 800° C.
Claim 8
Independent Claim
20 words
A method in accordance with claim I , wherein the titanium film has a thickness of 300 to 800 Å.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-28 | 1998-05-30 | 1998-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-28 | 2002-05-30 | 2002-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-28 | 2006-05-30 | 2006-11-29 | $7700.00 | Window Closed / Lapsed |