EP0085777A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Fabrication of devices including selective formation of titanium disilicide by direct reaction
Assignee: Texas Instruments Inc
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Filing: 1982-12-17
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Granted: —
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Expires: 2002-12-17
Abstract
Abstract Titanium 3 is deposited on a silicon substrate 1 and on a patterned layer of silicon dioxide 2 or polysilicon, and the structure is heated so that the titanium 3 in contact with silicon 1 or polysilicon reacts to form titanium disilicide 4 (TiSi2), while the titanium in contact with silicon dioxide 2 does not interact. The TiSi2 exhibits a much lower resistivity than silicon or polysilicon. This lower resistivity makes possible further advances in the performance of VLSI devices.
Inventors
- 👤 Chi K. Lau
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 10:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
115 words
A method for selectively forming areas of titanium disilicide on a silicon substrate and on patterned polysilicon , comprising the steps of: forming and patterning a layer of silicon dioxide on a silicon substrate; forming and patterning a layer of polysilicon on said layer of silicon dioxide; depositing a layer of titanium over said patterned layer of oxide and on the exposed areas of said silicon or polysilicon substrate; heating said structure to cause a reaction in those areas where titanium is in contact with silicon which produces titanium disilicide; selectively etching said structure to remove titanium from areas where reaction did not occur; annealing said structure to lower the resistivity of said titanium disilicide.
Claim 2
Independent Claim
115 words
A method for selectively forming areas of titanium disilicide on a silicon substrate and on patterned polysilicon , comprising the steps of: forming and patterning a layer of silicon dioxide on a silicon substrate; forming and patterning a layer of polysilicon on said layer of silicon dioxide; depositing a layer of titanium over said patterned layer of oxide and on the exposed areas of said silicon or polysilicon substrate; heating said structure to cause a reaction in those areas where titanium is in contact with silicon which produces titanium disilicide; selectively etching said structure to remove titanium from areas where reaction did not occur; annealing said structure to lower the resistivity of said titanium disilicide.
Claim 3
Dependent Claim
21 words
A method as in Claim 1 wherein said forming of silicon dioxide layer comprises depositing silicon dioxide on said silicon substrate.
Claim 4
Dependent Claim
25 words
A method as in claim 1 wherein said forming of silicon dioxide layer comprises growing silicon dioxide on said silicon substrate by an oxidation process.
Claim 5
Dependent Claim
32 words
A method as in Claim 1, wherein said etching selectively comprises immersion of said structure in a solution of approximately 70% H 2 S0 4 and 30% H 2 0 2 .
Claim 6
Dependent Claim
24 words
A method for fabricating a semiconductor integrated circuit device having a patterned layer of titanium disilicide, including the steps as recited in Claim 1.
Claim 7
Dependent Claim
15 words
A method as in Claim 1, wherein said substrate is an integrated circuit composite substrate.
References Cited (Backward Citations)
No citation records indexed.
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