Patent US4625288A successfully refreshed from Google Patents.
Patent US5366920A successfully refreshed from Google Patents.
US5366920A
Expired / Lapsed
US
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Method for fabricating a thin film capacitor
Assignee: NEC Corp
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Filing: 1994-04-12
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Granted: 1994-11-22
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Expires: 2014-04-12
Abstract
Abstract A thin film capacitor which comprises a lower electrode, a dielectric film and an upper electrode is fabricated on a substrate. The lower electrode is not provided by etching process using a photoresist mask, but it is provided by providing an aperture thorough an insulating layer deposited on the substrate, and depositing a conductive film on the bottom of the aperture and connected to a lower interconnection provided on the bottom of the aperture. Consequently, no convex protrusion is found at the processed edge of the lower electrode.
Inventors
- 👤 Shintaro Yamamichi
- 👤 Hirohito Watanabe
- 👤 Toshiki Hashimoto
- 👤 Toshiyuki Sakuma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:57
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
222 words
A method for fabricating a thin film capacitor, comprising the steps of: forming a first insulating layer on a substrate; providing a first aperture through said first insulating layer on a region for defining said thin film capacitor; filling said first aperture with a conductive material for a lower interconnection to be connected to said substrate; forming a second insulating layer on said first insulating layer and said conductive material in said first aperture, said second insulating layer being made flat on a surface thereof; providing a second aperture through said second insulating layer to expose said conductive material for said lower interconnection; depositing a conductive film for a lower electrode on a bottom of said second aperture and on said second insulating layer; covering said conductive film on said bottom of said second aperture and said second insulating layer with a third insulating layer, removing said third insulating layer, said conductive film on said second insulating layer, and said second insulating layer to expose said conductive film on said bottom of said second aperture, an exposed surface of said conductive film for said lower electrode being coplanar with a removed surface of said second insulating layer; depositing a dielectric film on said conductive film for said lower electrode; and depositing a conductive film for an upper electrode on said dielectric film.
Claim 2
Independent Claim
222 words
A method for fabricating a thin film capacitor, comprising the steps of: forming a first insulating layer on a substrate; providing a first aperture through said first insulating layer on a region for defining said thin film capacitor; filling said first aperture with a conductive material for a lower interconnection to be connected to said substrate; forming a second insulating layer on said first insulating layer and said conductive material in said first aperture, said second insulating layer being made flat on a surface thereof; providing a second aperture through said second insulating layer to expose said conductive material for said lower interconnection; depositing a conductive film for a lower electrode on a bottom of said second aperture and on said second insulating layer; covering said conductive film on said bottom of said second aperture and said second insulating layer with a third insulating layer, removing said third insulating layer, said conductive film on said second insulating layer, and said second insulating layer to expose said conductive film on said bottom of said second aperture, an exposed surface of said conductive film for said lower electrode being coplanar with a removed surface of said second insulating layer; depositing a dielectric film on said conductive film for said lower electrode; and depositing a conductive film for an upper electrode on said dielectric film.
Claim 3
Dependent Claim
82 words
A method for fabricating a thin film capacitor, according to claim 1, wherein: said step of removing comprises, the steps of: removing said third insulating layer to expose said conductive film not deposited on said bottom of said second aperture but on said second insulating layer; removing said conductive film on said second insulating layer; and removing said third insulating layer in said second aperture, and said second insulating layer to expose said conductive film on said bottom of said second aperture.
Claim 4
Dependent Claim
80 words
A method for fabricating a thin film capacitor, according to claim 1, wherein: said substrate is a silicon substrate; said first insulating layer is SiO 2 ; said second and third insulating layers are SOG; said conductive material for lower interconnection is polysilicon; said conductive film for said lower electrode is of Pt and Ta films; said dielectric film is (Ba 0 .5, Sr 0 .5)TiO 3 ; and said conductive film for upper electrode is of Al and TiN.
Claim 5
Dependent Claim
52 words
A method for fabricating a thin film capacitor, according to claim 1, wherein: said second insulating layer comprises a fourth insulating layer deposited on said first insulating layer to be equal in thickness to said conductive film for said lower electrode, and a fifth insulating layer deposited on said fourth insulating layer.
Claim 6
Dependent Claim
30 words
A method for fabricating a thin film capacitor, according to claim 4, wherein: said fourth insulating layer is Si 3 N 4 ; and said fifth insulating layer is SOG.
Claim 7
Independent Claim
242 words
A method for fabricating a thin film capacitor, comprising the steps of: forming a first insulating layer on a substrate; providing a first aperture through said first insulating layer on a region for defining said thin film capacitor; filling said first aperture with a conductive material for a lower interconnection to be connected to said substrate; forming a second insulating layer on said first insulating layer and said conductive material in said first aperture, said second insulating layer being made flat on a surface thereof; providing a second aperture through said second insulating layer to expose said conductive material for said lower interconnection; depositing a conductive film for a lower electrode on a bottom of said second aperture and on said second insulating layer; depositing a dielectric film on said conductive film for said lower electrode; covering said dielectric film on said conductive film for said lower electrode on said bottom of said second aperture and said second insulating layer with a third insulating layer, removing said third insulating layer, said dielectric film on said conductive film on said second insulating layer, and said second insulating layer to expose said dielectric film on said conductive film for said lower electrode on said bottom of said second aperture, an exposed surface of said dielectric film for said lower electrode being coplanar with a removed surface of said second insulating layer; and depositing a conductive film for an upper electrode on said dielectric film.
Claim 8
Independent Claim
242 words
A method for fabricating a thin film capacitor, comprising the steps of: forming a first insulating layer on a substrate; providing a first aperture through said first insulating layer on a region for defining said thin film capacitor; filling said first aperture with a conductive material for a lower interconnection to be connected to said substrate; forming a second insulating layer on said first insulating layer and said conductive material in said first aperture, said second insulating layer being made flat on a surface thereof; providing a second aperture through said second insulating layer to expose said conductive material for said lower interconnection; depositing a conductive film for a lower electrode on a bottom of said second aperture and on said second insulating layer; depositing a dielectric film on said conductive film for said lower electrode; covering said dielectric film on said conductive film for said lower electrode on said bottom of said second aperture and said second insulating layer with a third insulating layer, removing said third insulating layer, said dielectric film on said conductive film on said second insulating layer, and said second insulating layer to expose said dielectric film on said conductive film for said lower electrode on said bottom of said second aperture, an exposed surface of said dielectric film for said lower electrode being coplanar with a removed surface of said second insulating layer; and depositing a conductive film for an upper electrode on said dielectric film.
Claim 9
Dependent Claim
48 words
A method for fabricating a thin film capacitor, according to claim 6, wherein: said second insulating layer comprises a fourth insulating layer deposited on said first insulating layer to be equal in thickness to a combination of said conductive film for said lower electrode and said dielectric film.
Claim 10
Independent Claim
288 words
A method for fabricating a thin film capacitor, comprising the steps of: forming a first insulating layer on a substrate; providing a first aperture through said first insulating layer on a region for defining said thin film capacitor; filling said first aperture with a conductive material for a lower interconnection to be connected to said substrate; forming a second insulating layer on said first insulating layer and said conductive material in said first aperture, said second insulating layer being made flat on a surface thereof; providing a second aperture through said second insulating layer to expose said conductive material for said lower interconnection; depositing a conductive film for a lower electrode on a bottom of said second aperture and on said second insulating layer; depositing a dielectric film on said conductive film for said lower electrode; depositing a conductive film for an upper electrode on said dielectric film: covering said conductive film for said upper electrode on said dielectric film and said conductive film for said lower electrode on said bottom of said second aperture and said second insulating layer with a third insulating layer, removing said third insulating layer, said conductive film for said upper electrode, said dielectric film and said conductive film for said lower electrode successively deposited on said second insulating layer, and said second insulating layer to expose said conductive film for said upper electrode deposited on said dielectric film on said conductive film for said lower electrode on said bottom of said second aperture, an exposed surface of said conductive film for said upper electrode being coplanar with a removed surface of said second insulating layer; and depositing a conductive film for an upper interconnection on said conductive film for said upper electrode.
Claim 11
Independent Claim
288 words
A method for fabricating a thin film capacitor, comprising the steps of: forming a first insulating layer on a substrate; providing a first aperture through said first insulating layer on a region for defining said thin film capacitor; filling said first aperture with a conductive material for a lower interconnection to be connected to said substrate; forming a second insulating layer on said first insulating layer and said conductive material in said first aperture, said second insulating layer being made flat on a surface thereof; providing a second aperture through said second insulating layer to expose said conductive material for said lower interconnection; depositing a conductive film for a lower electrode on a bottom of said second aperture and on said second insulating layer; depositing a dielectric film on said conductive film for said lower electrode; depositing a conductive film for an upper electrode on said dielectric film: covering said conductive film for said upper electrode on said dielectric film and said conductive film for said lower electrode on said bottom of said second aperture and said second insulating layer with a third insulating layer, removing said third insulating layer, said conductive film for said upper electrode, said dielectric film and said conductive film for said lower electrode successively deposited on said second insulating layer, and said second insulating layer to expose said conductive film for said upper electrode deposited on said dielectric film on said conductive film for said lower electrode on said bottom of said second aperture, an exposed surface of said conductive film for said upper electrode being coplanar with a removed surface of said second insulating layer; and depositing a conductive film for an upper interconnection on said conductive film for said upper electrode.
Claim 12
Dependent Claim
61 words
A method for fabricating a thin film capacitor, according to claim 8, wherein: said second insulating layer comprises a fourth insulating layer deposited on said first insulating layer to be equal in thickness to a combination of said conductive films for said upper and lower electrodes and said dielectric film, and a fifth insulating layer deposited on said fourth insulating layer.
Claim 13
Independent Claim
233 words
A method for fabricating a thin film capacitor, comprising the steps of: forming a first insulating layer on a substrate; providing a first aperture through said first insulating layer on a region for defining said thin film capacitor; filling said first aperture with a conductive material for a lower interconnection to be connected to said substrate; forming a second insulating layer on said first insulating layer and said conductive material in said first aperture, said second insulating layer being made flat on a surface thereof; providing a second aperture through said second insulating layer to expose said conductive material for said lower interconnection; depositing a conductive film for a lower electrode on a bottom of said second aperture and said second insulating layer; depositing a dielectric film on said conductive film for said lower electrode; depositing a conductive film for an upper electrode on said dielectric film; covering said conductive film for said upper electrode on said dielectric film and said conductive film for said lower electrode on said bottom of said second aperture and said second insulating layer with a third insulating layer, providing a third aperture through said third insulating layer to expose said conductive film for said upper electrode deposited in said second aperture; and depositing a conductive film for an upper interconnection to be filled into said third aperture and connected to said conductive film for said upper electrode.
Claim 14
Independent Claim
233 words
A method for fabricating a thin film capacitor, comprising the steps of: forming a first insulating layer on a substrate; providing a first aperture through said first insulating layer on a region for defining said thin film capacitor; filling said first aperture with a conductive material for a lower interconnection to be connected to said substrate; forming a second insulating layer on said first insulating layer and said conductive material in said first aperture, said second insulating layer being made flat on a surface thereof; providing a second aperture through said second insulating layer to expose said conductive material for said lower interconnection; depositing a conductive film for a lower electrode on a bottom of said second aperture and said second insulating layer; depositing a dielectric film on said conductive film for said lower electrode; depositing a conductive film for an upper electrode on said dielectric film; covering said conductive film for said upper electrode on said dielectric film and said conductive film for said lower electrode on said bottom of said second aperture and said second insulating layer with a third insulating layer, providing a third aperture through said third insulating layer to expose said conductive film for said upper electrode deposited in said second aperture; and depositing a conductive film for an upper interconnection to be filled into said third aperture and connected to said conductive film for said upper electrode.
Claim 15
Dependent Claim
85 words
A method for fabricating a thin film capacitor, according to claim 10, further comprising the steps of: removing said third insulating layer, said conductive film for said upper electrode, said dielectric film and said conductive film for said conductive film for said lower electrode successively deposited on said second insulating layer, and said second insulating layer to make removed surfaces of said second and third insulating layers flat; and providing said third aperture through said third insulating layer thus made flat on said removed surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-11-21 | 1998-05-23 | 1998-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-21 | 2002-05-23 | 2002-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-21 | 2006-05-23 | 2006-11-22 | $7700.00 | Window Closed / Lapsed |