US5364802A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a semiconductor device with buried electrode
Assignee: Canon Inc
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Filing: 1993-10-01
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Granted: 1994-11-15
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Expires: 2013-10-01
Abstract
Abstract A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first conductivity type and a second semiconductor region of the first conductivity type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second conductivity type, and an emitter region including a semiconductor region of the first conductivity type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region.
Inventors
- 👤 Yuzo Kataoka
- 👤 Toshihiko Ichise
- 👤 Keiji Ishizuka
- 👤 Tetsuo Asaba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 05:04
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/012; H10D84/00; H10D84/40; H10D84/401; H10D10/00; H10D10/01; H10D10/051; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10D84/01; H10D84/0107; H10D84/0109; H10P; H10P14/00; H10P14/20; H10P14/24; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
201 words
A method for producing a semiconductor device including a bipolar transistor, comprising the steps of: forming a first semiconductor region of a first conductivity type; forming a second semiconductor region of the first conductivity type on the first region so that the first and second regions form a collector region, the second region having a higher resistivity than that of the first region; forming a third semiconductor region of a second conductivity type, for defining a base region, on the second region; forming a fourth region of a first conductivity type semiconductor, for defining an emitter region, on the third region; forming a groove in the second region so as to expose a surface portion of the first region; forming contact holes in the third and fourth regions, the contact holes having depths smaller than a depth of the groove; forming collector, base and emitter electrodes in the groove and in the contact holes in the third and fourth regions, respectively, by means of a selective deposition process having a first process step in which only the groove is filled with a metal material, and a separate and subsequent step in which the contact holes are filled with a metal material.
Claim 2
Independent Claim
201 words
A method for producing a semiconductor device including a bipolar transistor, comprising the steps of: forming a first semiconductor region of a first conductivity type; forming a second semiconductor region of the first conductivity type on the first region so that the first and second regions form a collector region, the second region having a higher resistivity than that of the first region; forming a third semiconductor region of a second conductivity type, for defining a base region, on the second region; forming a fourth region of a first conductivity type semiconductor, for defining an emitter region, on the third region; forming a groove in the second region so as to expose a surface portion of the first region; forming contact holes in the third and fourth regions, the contact holes having depths smaller than a depth of the groove; forming collector, base and emitter electrodes in the groove and in the contact holes in the third and fourth regions, respectively, by means of a selective deposition process having a first process step in which only the groove is filled with a metal material, and a separate and subsequent step in which the contact holes are filled with a metal material.
Claim 3
Dependent Claim
12 words
A method according to claim 1, wherein the metal material is alkylaluminumhydride.
Claim 4
Dependent Claim
35 words
A method according to claim 1, wherein the base and emitter electrodes are formed in a first chamber, and a wiring connected to the base and the emitter electrodes is formed in a second chamber.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-14 | 1998-05-16 | 1998-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-14 | 2002-05-16 | 2002-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-14 | 2006-05-16 | 2006-11-15 | $7700.00 | Window Closed / Lapsed |