Patent US5364716A successfully refreshed from Google Patents.
US5364716A
Expired / Lapsed
US
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Pattern exposing method using phase shift and mask used therefor
Assignee: Fujitsu Ltd
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Filing: 1992-09-03
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Granted: 1994-11-15
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Expires: 2012-09-03
Abstract
Abstract A pattern exposing method forms a predetermined resist pattern on a substrate by exposing a first resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the first resist layer by use of a phase shift of light transmitted through the first reticle, developing the exposed first resist layer, exposing a second resist layer which is formed on the entire surface of the substrate, including a top of the first resist layer, using a second reticle which has a second pattern for exposing a second corresponding pattern on the second resist layer by use of light transmitted through the second reticle, where the second corresponding pattern overlaps at least a part of the first corresponding pattern, and developing the second resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.
Inventors
- 👤 Kenji Nakagawa
- 👤 Masao Kanazawa
- 👤 Tamae Haruki
- 👤 Yasuko Tabata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:25
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/34; G03F1/68; G03F1/70; G03F7/00; G03F7/0035; G03F7/20; G03F7/2022; G03F7/70; G03F7/70216; G03F7/70283; G03F7/70425; G03F7/70466
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
140 words
A pattern exposing method for forming a predetermined resist pattern on a substrate, said pattern exposing method comprising the steps of: (a) exposing a resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the resist layer by use of a phase shift of light transmitted through the first reticle; (b) exposing the resist layer using a second reticle which has a second pattern for exposing a second corresponding pattern on the resist layer by use of light transmitted through the second reticle, said second corresponding pattern overlapping at least a part of said first corresponding pattern; and (c) developing the resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.
Claim 2
Dependent Claim
140 words
A pattern exposing method for forming a predetermined resist pattern on a substrate, said pattern exposing method comprising the steps of: (a) exposing a resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the resist layer by use of a phase shift of light transmitted through the first reticle; (b) exposing the resist layer using a second reticle which has a second pattern for exposing a second corresponding pattern on the resist layer by use of light transmitted through the second reticle, said second corresponding pattern overlapping at least a part of said first corresponding pattern; and (c) developing the resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.
Claim 3
Dependent Claim
55 words
The pattern exposing method as claimed in claim 1, wherein said step (a) uses a first reticle which has the first pattern which is defined by a phase shift layer formed on a transparent reticle substrate, and exposes the first corresponding pattern on the resist layer using an edge part of the phase shift layer.
Claim 4
Dependent Claim
67 words
The pattern exposing method as claimed in claim 1, wherein said step (b) uses a second reticle which has the second pattern which is defined by a light blocking layer formed on a transparent reticle substrate and an opening formed in the light blocking layer, and exposes the second corresponding pattern on the resist layer using the opening in the light blocking layer of the second reticle.
Claim 5
Dependent Claim
21 words
The pattern exposing method as claimed in claim 3, wherein said step (a) uses a positive resist as the resist layer.
Claim 6
Dependent Claim
174 words
A pattern exposing method for forming a predetermined resist pattern on a substrate, said pattern exposing method comprising the steps of: (a) exposing a first resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the first resist layer by use of a phase shift of light transmitted through the first reticle; (b) developing the exposed first resist layer; (c) forming a second resist layer on the entire surface of the substrate including a top of the first resist layer; (d) exposing the second resist layer using a second reticle which has a second pattern for exposing a second corresponding pattern on the second resist layer by use of light transmitted through the second reticle, said second corresponding pattern overlapping at least a part of said first corresponding pattern; and (e) developing the exposed second resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.
Claim 7
Dependent Claim
174 words
A pattern exposing method for forming a predetermined resist pattern on a substrate, said pattern exposing method comprising the steps of: (a) exposing a first resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the first resist layer by use of a phase shift of light transmitted through the first reticle; (b) developing the exposed first resist layer; (c) forming a second resist layer on the entire surface of the substrate including a top of the first resist layer; (d) exposing the second resist layer using a second reticle which has a second pattern for exposing a second corresponding pattern on the second resist layer by use of light transmitted through the second reticle, said second corresponding pattern overlapping at least a part of said first corresponding pattern; and (e) developing the exposed second resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.
Claim 8
Dependent Claim
41 words
The pattern exposing method as claimed in claim 5, wherein said step (d) uses a second reticle which exposes the second corresponding pattern on the second resist layer by use of a phase shift of light transmitted through the second reticle.
Claim 9
Dependent Claim
56 words
The pattern exposing method as claimed in claim 6, wherein said step (a) uses a first reticle which has the first pattern which is defined by a phase shift layer formed on a transparent reticle substrate, and exposes the first corresponding pattern on the first resist layer using an edge part of the phase shift layer.
Claim 10
Dependent Claim
56 words
The pattern exposing method as claimed in claim 7, wherein said step (d) uses a second reticle which has the second pattern which is defined by a phase shift layer formed on a transparent reticle substrate, and exposes the second corresponding pattern on the second resist layer using an edge part of the phase shift layer.
Claim 11
Dependent Claim
35 words
The pattern exposing method as claimed in claim 6, wherein said first corresponding pattern at least includes a first part which intersects perpendicularly to a second part of said second corresponding pattern on the substrate.
Claim 12
Dependent Claim
26 words
The pattern exposing method as claimed in claim 9, wherein the first and second parts of the first and second corresponding patterns have an oblong shape.
Claim 13
Dependent Claim
18 words
The pattern exposing method as claimed in claim 10, wherein the first and second parts have zigzag contours.
Claim 14
Dependent Claim
26 words
The pattern exposing method as claimed in claim 6, wherein said steps (a) and (c) use a negative resist as the first and second resist layers.
Claim 15
Dependent Claim
23 words
The pattern exposing method as claimed in claim 12, wherein the predetermined resist pattern formed by said step (e) corresponds to a hole.
Claim 16
Dependent Claim
56 words
The pattern exposing method as claimed in claim 6, wherein the first and second reticles used by said steps (a) and (d) are identical, and one of the first and second reticles is used at a position which is shifted relative to the other between the two independent exposures made in said steps (a) and (d).
Claim 17
Dependent Claim
122 words
The pattern exposing method as claimed in claim 5, wherein said step (a) uses a first reticle which has the first pattern which is defined by a phase shift layer formed on a transparent reticle substrate and having first and second phase shift parts, and exposes the first corresponding pattern on the first resist layer using edge parts of the first and second phase shift parts, said first phase shift part having a width such that a closed ring pattern is exposed by the edge parts thereof, said second phase shift part having a width narrower than that of the first phase shift part so that patterns exposed by the edge parts thereof overlap in the form of a single line pattern.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-14 | 1998-05-16 | 1998-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-14 | 2002-05-16 | 2002-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-14 | 2006-05-16 | 2006-11-15 | $7700.00 | Window Closed / Lapsed |