Abstract A method of forming crystals is adapted to grow a single-crystal by subjecting a substrate having a free surface with mutually adjacent non-nucleation and nucleation surfaces to a crystal forming process. Each nucleation surface consists of an amorphous material, having a greater nucleation density than the non-nucleation surface, with respect to a material with which the single-crystal will be formed, and having an area sufficiently small to permit only one nucleus to be generated, which will grow into the single crystal. The non-nucleation surfaces are made of a material having a higher etching rate than the material of which the nucleation surfaces are made. After a process of implanting ions in the entire surface of the substrate, the resultant substrate is subjected to an etching process whereby the non-nucleation surface material alone is selectively etched to remove the unnecessarily ion-implanted portions of the material. Thus, in the ion implantation, which is performed without employing a resist and followed by selective etching, a great amount of ions can be implanted without involving the conventional problems and without complicating the method. Therefore, it is possible to achieve a sufficiently great difference in nucleation density between the nucleation and non-nucleation surfaces, thereby increasing the yield of crystal growth.
A method for forming a single crystal on a substrate comprising: (a) providing a substrate having an amorphous nucleation surface and a non-nucleation surface arranged adjacent to each other wherein said amorphous nucleation surface has an area of 10 μm or less in maximum diameter and a nucleation density sufficiently larger than the nucleation density of said non-nucleation surface to selectively form a single nucleus; and said non-nucleation surface is composed of a material of greater etching rate than that of said nucleation surface; (b) implanting ions over the entire surface of said substrate so as to implant ions in said amorphous nucleation surface and said non-nucleation surface, said ions being capable of increasing the nucleation density of said nucleation surface; (c) etching said substrate such that only the non-nucleation surface implanted with ions is selectively etched to remove the ion-implanted portions on said non-nucleation surface, thereby preventing the nucleation density of said non-nucleation surface from increasing; (d) growing by vapor deposition a single crystal from a single nucleus deposited on said nucleation surface, said single crystal being overgrown on said non-nucleation surface.
Claim 2
Independent Claim
183 words
A method for forming a single crystal on a substrate comprising: (a) providing a substrate having an amorphous nucleation surface and a non-nucleation surface arranged adjacent to each other wherein said amorphous nucleation surface has an area of 10 μm or less in maximum diameter and a nucleation density sufficiently larger than the nucleation density of said non-nucleation surface to selectively form a single nucleus; and said non-nucleation surface is composed of a material of greater etching rate than that of said nucleation surface; (b) implanting ions over the entire surface of said substrate so as to implant ions in said amorphous nucleation surface and said non-nucleation surface, said ions being capable of increasing the nucleation density of said nucleation surface; (c) etching said substrate such that only the non-nucleation surface implanted with ions is selectively etched to remove the ion-implanted portions on said non-nucleation surface, thereby preventing the nucleation density of said non-nucleation surface from increasing; (d) growing by vapor deposition a single crystal from a single nucleus deposited on said nucleation surface, said single crystal being overgrown on said non-nucleation surface.
Claim 3
Dependent Claim
20 words
A method of forming a single crystal according to claim 1, wherein said non-nucleation surface is constituted of silicon oxide.
Claim 4
Dependent Claim
20 words
A method of forming a single crystal according to claim 1, wherein said nucleation surface is constituted of silicon nitride.
Claim 5
Dependent Claim
23 words
A method of forming a single crystal according to claim 1, comprising implanting silicon ions as the ion in said ion implantation process.
Claim 6
Dependent Claim
33 words
A method of forming a single crystal according to claim 1, comprising etching the non-nucleation surface to a depth at least two times the depth at which have maximum concentration of implanted ions.