US5363393A
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Surface emitting semiconductor laser
Assignee: Hitachi Ltd
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Filing: 1993-03-29
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Granted: 1994-11-08
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Expires: 2013-03-29
Abstract
Abstract A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a dielectric film multi-layer mirror and a p-type semiconductor multi-layer mirror on a semiconductor substrate. The energy ΔEc of conduction band discontinuity is higher than the energy ΔEv of valence band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the p-type semiconductor multi-layer mirror. On the other hand, the energy ΔEv of valence band discontinuity is higher than the energy ΔEc of conduction band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the n-type semiconductor multi-layer mirror.
Inventors
- 👤 Kazuhisa Uomi
- 👤 Misuzu Sagawa
- 👤 Atsushi Takai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:59
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18361; H01S5/30; B; B82; B82Y; B82Y20/00; H01S5/02; H01S5/0206; H01S5/0207; H01S5/18305; H01S5/18308; H01S5/18341; H01S5/18369; H01S5/20; H01S5/22; H01S5/2205; H01S5/2222; H01S5/2224; H01S5/305; H01S5/3054; H01S5/32; H01S5/3211; H01S5/34; H01S5/343; H01S5/34306
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
59 words
A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a p-type semiconductor multi-layer mirror and an n-type semiconductor multi-layer mirror on a semiconductor substrate and a pair of electrodes for injecting current into the active layer, wherein said p- and n-semiconductor multi-layer mirrors are made of different semiconductor materials.
Claim 2
Dependent Claim
59 words
A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a p-type semiconductor multi-layer mirror and an n-type semiconductor multi-layer mirror on a semiconductor substrate and a pair of electrodes for injecting current into the active layer, wherein said p- and n-semiconductor multi-layer mirrors are made of different semiconductor materials.
Claim 3
Dependent Claim
120 words
A surface emitting semiconductor layer of a laminated structure having at least a light emitting active layer sandwiched between a p-type semiconductor multi-layer mirror and an n-type semiconductor multi-layer mirror on a semiconductor substrate and a pair of electrodes for injecting current into the active layer, wherein energy ΔEc of conduction band discontinuity is higher than energy ΔEv of valence band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting said p-type semiconductor multi-layer mirror while the energy ΔEv of valence band discontinuity is higher than the energy ΔEc of conduction band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting said n-type semiconductor multi-layer mirror the n-type semiconductor multi-layer.
Claim 4
Dependent Claim
120 words
A surface emitting semiconductor layer of a laminated structure having at least a light emitting active layer sandwiched between a p-type semiconductor multi-layer mirror and an n-type semiconductor multi-layer mirror on a semiconductor substrate and a pair of electrodes for injecting current into the active layer, wherein energy ΔEc of conduction band discontinuity is higher than energy ΔEv of valence band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting said p-type semiconductor multi-layer mirror while the energy ΔEv of valence band discontinuity is higher than the energy ΔEc of conduction band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting said n-type semiconductor multi-layer mirror the n-type semiconductor multi-layer.
Claim 5
Dependent Claim
80 words
A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a dielectric film multi-layer mirror and a p-type semiconductor multi-layer mirror on a semiconductor substrate and a pair of electrodes for injecting current into the active layer, wherein energy ΔEc of conduction band discontinuity is higher than energy ΔEv of valence band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting said p-type semiconductor multi-layer mirror.
Claim 6
Dependent Claim
80 words
A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a dielectric film multi-layer mirror and a p-type semiconductor multi-layer mirror on a semiconductor substrate and a pair of electrodes for injecting current into the active layer, wherein energy ΔEc of conduction band discontinuity is higher than energy ΔEv of valence band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting said p-type semiconductor multi-layer mirror.
Claim 7
Dependent Claim
111 words
A surface emitting semiconductor laser of a laminated structure having at least light emitting active layer sandwiched between a p-type semiconductor multi-layer mirror and an n-type semiconductor multi-layer mirror on a semiconductor substrate and a pair of electrodes for injecting current into the active layer, wherein said p-type semiconductor multi-layer mirror is made of at least two kinds of III-V compound semiconductor layers with different types of group III atoms from each other and with different refractive indices, and said n-type semiconductor multi-layer mirror is made of at least two kinds of III-V compound semiconductor layers with different types of group V atoms from each other and with different refractive indices.
Claim 8
Dependent Claim
111 words
A surface emitting semiconductor laser of a laminated structure having at least light emitting active layer sandwiched between a p-type semiconductor multi-layer mirror and an n-type semiconductor multi-layer mirror on a semiconductor substrate and a pair of electrodes for injecting current into the active layer, wherein said p-type semiconductor multi-layer mirror is made of at least two kinds of III-V compound semiconductor layers with different types of group III atoms from each other and with different refractive indices, and said n-type semiconductor multi-layer mirror is made of at least two kinds of III-V compound semiconductor layers with different types of group V atoms from each other and with different refractive indices.
Claim 9
Dependent Claim
77 words
A surface emitting semiconductor laser according to claim 1, wherein the semiconductor layer having the largest energy gap among at least two kinds of semiconductor layers constituting said p-type semiconductor multi-layer mirror has a higher p-type doping concentration than other semiconductor layers have, and the semiconductor layer having the largest energy gap among at least two kinds of semiconductor layers constituting the n-type semiconductor multi-layer mirror has a higher n-type doping concentration than other semiconductor layers have.
Claim 10
Dependent Claim
129 words
A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a p-type semiconductor multi-layer mirror and an n-type semiconductor multi-layer mirror on a semiconductor substrate and a pair of electrodes for injecting current into the active layer, wherein said p-type semiconductor multi-layer mirror is made of a combination selected from a group comprising a combination of InGaAsP and InAlAs, a combination of InGaAsP and InGaAlAs, a combination of InAlAs and InGaAlAs, a combination of InGaAsP and InAlAsP, and a combination of InGaAlAs and InGaAlAs having different Al compositions, and said n-type semiconductor multi-layer mirror is made of a combination of InP and InGaAsP, or InGaAsP and InGaAsP having different composition ratios of In, Ga, As and P from each other.
Claim 11
Dependent Claim
129 words
A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a p-type semiconductor multi-layer mirror and an n-type semiconductor multi-layer mirror on a semiconductor substrate and a pair of electrodes for injecting current into the active layer, wherein said p-type semiconductor multi-layer mirror is made of a combination selected from a group comprising a combination of InGaAsP and InAlAs, a combination of InGaAsP and InGaAlAs, a combination of InAlAs and InGaAlAs, a combination of InGaAsP and InAlAsP, and a combination of InGaAlAs and InGaAlAs having different Al compositions, and said n-type semiconductor multi-layer mirror is made of a combination of InP and InGaAsP, or InGaAsP and InGaAsP having different composition ratios of In, Ga, As and P from each other.
Claim 12
Dependent Claim
17 words
A surface emitting semiconductor laser according to claim 1, wherein said semiconductor substrate is made of InP.
Claim 13
Dependent Claim
18 words
A surface emitting semiconductor laser according to claim 1, wherein said semiconductor substrate has a p conductivity type.
Claim 14
Dependent Claim
24 words
A surface emitting semiconductor laser according to claim 1, wherein said active layer is constructed by at least one quantum well type layer structure.
Claim 15
Dependent Claim
73 words
A surface emitting semiconductor laser of a laminated structure having at least a light emitting InGaAs quantum well type active layer sandwiched between a p-type semiconductor multi-layer mirror and an n-type semiconductor multi-layer mirror on a GaAs substrate and a pair of electrodes for injecting current into the active layer, wherein said p- and n-type semiconductor multi-layer mirrors are made of two kinds of semiconductor layers with no Al and different refractive indices.
Claim 16
Dependent Claim
73 words
A surface emitting semiconductor laser of a laminated structure having at least a light emitting InGaAs quantum well type active layer sandwiched between a p-type semiconductor multi-layer mirror and an n-type semiconductor multi-layer mirror on a GaAs substrate and a pair of electrodes for injecting current into the active layer, wherein said p- and n-type semiconductor multi-layer mirrors are made of two kinds of semiconductor layers with no Al and different refractive indices.
Claim 17
Dependent Claim
30 words
A surface emitting semiconductor laser according to claim 10, wherein said p- and n-type semiconductor multi-layer mirrors are made of a combination of InGaP and GaAs, or InGaAsP and GaAs.
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