US5362683A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making epitaxial wafers
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1994-03-04
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Granted: 1994-11-08
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Expires: 2014-03-04
Abstract
Abstract To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures on both sides of a GaAs substrate wafer with the crystal plane orientation of {100}. The epitaxial wafer is then divided in the GaAs substrate wafer portion into two pieces to obtain two epitaxial wafers. To perform the epitaxial growth process, a plurality of GaAs substrate wafers are held at their edges and then the GaAs substrate wafers are placed in a Ga solution at prescribed spatial intervals. To divide the epitaxial wafer in the GaAs substrate portion into two pieces, the substrate wafer portion is cut parallel to the main surface. Or, the GaAs substrate wafer can also be removed by means of etching while the epitaxial wafer is rotated at a high speed in the etching solution.
Inventors
- 👤 Takao Takenaka
- 👤 Masahisa Endo
- 👤 Masato Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:30
CPC Classifications
H; H10; H10P; H10P52/00; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S117/00; Y10S117/915
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
54 words
A method of manufacturing epitaxial wafers wherein epitaxial growth layers with identical structures are formed on both sides of semiconductor single crystal substrates and then the epitaxial wafer is divided, with the dividing plane in said semiconductor single crystal substrate portion parallel to the main surface, into two pieces to obtain two epitaxial wafers.
Claim 2
Independent Claim
54 words
A method of manufacturing epitaxial wafers wherein epitaxial growth layers with identical structures are formed on both sides of semiconductor single crystal substrates and then the epitaxial wafer is divided, with the dividing plane in said semiconductor single crystal substrate portion parallel to the main surface, into two pieces to obtain two epitaxial wafers.
Claim 3
Dependent Claim
47 words
A method of manufacturing epitaxial wafers as described in claim 1, wherein said epitaxial growth layers are formed in a process in which a plurality of semiconductor single crystal substrates are held at their edges and then placed in an epitaxial growth solution at prescribed spatial intervals.
Claim 4
Dependent Claim
58 words
A method of manufacturing epitaxial wafers as described in claim 1, wherein said dividing is a cutting process in which said semiconductor single crystal substrate portion is cut along a plane parallel to the main surface, or a process which includes said cutting process followed by a process of removing the rest of the semiconductor single crystal substrate.
Claim 5
Dependent Claim
64 words
A method of manufacturing epitaxial wafers as described in claim 3, wherein said process of cutting the semiconductor single crystal substrate portion is a process in which said epitaxial wafers which epitaxial growth layers with identical structures have been formed on both sides of said substrates are sliced one by one, or sliced after a plurality of them are laminated to form an ingot.
Claim 6
Dependent Claim
62 words
A method of manufacturing epitaxial wafers as described in claim 1, wherein said dividing process is a process in which said epitaxial wafer(s) which epitaxial growth layers with identical structures have been formed on both sides of semiconductor single crystal substrate is rotated at a high speed in an etching solution to remove said semiconductor single crystal substrate by means of etching.
Claim 7
Dependent Claim
34 words
A method of manufacturing epitaxial wafers as described in claim 1, wherein said semiconductor single crystal substrate is composed of GaAs compound semiconductor and said epitaxial growth layers are composed of GaAlAs compound semiconductor.
Claim 8
Dependent Claim
24 words
A method of manufacturing epitaxial wafers as described in claim 1, wherein the crystal plane orientation of said semiconductor single crystal substrate is {100}.
Claim 9
Dependent Claim
59 words
A method of manufacturing epitaxial wafers as described in claim 1, wherein after a photolithographic process is performed to form a prescribed electrode pattern on said epitaxial wafer which epitaxial growth layers with identical structures have been formed on both sides of the semiconductor single crystal substrate, said epitaxial wafer is divided in half to obtain two epitaxial wafers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-07 | 1998-05-09 | 1998-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-07 | 2002-05-09 | 2002-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-07 | 2006-05-09 | 2006-11-08 | $7700.00 | Window Closed / Lapsed |