US4675207A
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Process and apparatus for the deposition on a substrate of a thin film of a compound containing at least one cationic constituent and at least one anionic constituent
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1985-08-13
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Granted: 1987-06-23
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Expires: 2005-08-13
Abstract
Abstract The invention relates to a process for the depositing on a substrate a thin film or layer of a compound having at least one cationic constituent C and at least one anionic constituent A, such as zinc sulphide. On the substrate are formed at least two superimposed ionic layers respectively incorporating the said cationic constituent or constituents C and the said anionic constituent or constituents A by successively immersing the substrate in a first solution e.g. containing a salt of C, such as zinc sulphate and in a second solution eg containing a salt of A, such as sodium sulphide, while rinsing the substrate between two immersion operations.
Inventors
- 👤 Yann F. Nicolau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:43
CPC Classifications
C; C23; C23C; C23C18/00; C30; C30B; C30B7/00; C30B7/005; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/265; H10P14/29; H10P14/2901; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
141 words
A process for the deposition on a substrate of a thin film of a compound containing at least one cationic constituent C and at least one anionic constituent A, wherein it comprises forming on said substrate at least two superimposed ionic layers respectively containing the cationic constituent or constituents C and the anionic constituent or constituents A by successive immersions of the substrate in at least one first solution containing at least one salt, a complex or an ionized compound of said cationic constituent or constituents C or a precursor of said cationic constituent or constituents C, and at least one second solution containing at least one salt, a complex or an ionized compound of said anionic constituent or constituents A or a precursor of said anionic constituent or constituents A, said substrate undergoing rinsing by a solvent between two immersions.
Claim 2
Dependent Claim
141 words
A process for the deposition on a substrate of a thin film of a compound containing at least one cationic constituent C and at least one anionic constituent A, wherein it comprises forming on said substrate at least two superimposed ionic layers respectively containing the cationic constituent or constituents C and the anionic constituent or constituents A by successive immersions of the substrate in at least one first solution containing at least one salt, a complex or an ionized compound of said cationic constituent or constituents C or a precursor of said cationic constituent or constituents C, and at least one second solution containing at least one salt, a complex or an ionized compound of said anionic constituent or constituents A or a precursor of said anionic constituent or constituents A, said substrate undergoing rinsing by a solvent between two immersions.
Claim 3
Dependent Claim
71 words
A process according to claim 1, wherein it comprises at least one cycle incorporating the following successive stages: immersion of said substrate in a first solution of a salt, a complex or an ionized compound of said cationic constituent, rinsing said substrate with a solvent, immersion of said substrate in a second solution of a salt, compound or an ionized complex of said anionic constituent, rinsing said substrate in a solvent.
Claim 4
Dependent Claim
76 words
A process according to claim 1, wherein the ionic layer containing said cationic constituent is formed by immersions of the substrate in a first solution of a salt, a compound or an ionized complex of a precursor of said cationic constituent, followed by the rinsing of said substrate with a solvent and an immersion of the rinsed substrate in a solution containing an oxydizing or reducing agent able to convert the precursor into said cationic constituent.
Claim 5
Dependent Claim
71 words
A process according to claim 1, wherein the ionic layer of said anionic constituent is formed by immersing the substrate in a second solution of a salt, a complex or an ionized compound of a precursor of said anionic constituent, followed by rinsing the substrate with a solvent and immersing the rinsed substrate in a solution containing a oxydizing or reducing agent able to convert said precursor into said anionic constituent.
Claim 6
Dependent Claim
21 words
A process according to claim 1, wherein the first solution contains a cationic dopant or a precursor of a cationic dopant.
Claim 7
Dependent Claim
21 words
A process according to claim 1, wherein the second solution contains an anionic dopant or a precursor of an anionic dopant.
Claim 8
Dependent Claim
48 words
A process according to claim 1, wherein on the substrate is also formed an ionic layer having an anionic or cationic dopant by immersing the substrate in a third solution of a salt, a complex or an ionized compound of said dopant or a precursor of said dopant.
Claim 9
Dependent Claim
47 words
A process according to claim 2, wherein it comprises at least one further cycle having the stages of immersing the substrate in a third solution of a salt, a complex or an ionized compound of a cationic or anionic dopant and rinsing said substrate with a solvent.
Claim 10
Dependent Claim
22 words
A process according to claim 1, wherein the substrate is negatively polarized during the immersion of the substrate in a first solution.
Claim 11
Dependent Claim
36 words
A process according to claim 8, wherein the substrate is negatively polarized during the immersion of the substrate in the third solution when the latter contains a cationic dopant or a precursor of a cationic dopant.
Claim 12
Dependent Claim
22 words
A process according to claim 1, wherein the substrate is positively polarized during the immersion of said substrate in the second solution.
Claim 13
Dependent Claim
36 words
A process according to claim 8, wherein the substrate is positively polarized during the immersion of the substrate in the third solution, when the latter contains an anionic dopant or a precursor of an anionic dopant.
Claim 14
Dependent Claim
16 words
Process according to either of the claims 1 and 8, wherein the rinsing solvent is water.
Claim 15
Dependent Claim
17 words
A process according to either of the claims 1 and 8, wherein said solutions are aqueous solutions.
Claim 16
Dependent Claim
25 words
A process according to claim 14, wherein the concentrations of said solutions in salt, compound or complex are 10 -3 to 1 mol.l -1 .
Claim 17
Dependent Claim
26 words
A process according to either of the claims 1 and 8, wherein the substrate immersion time in each of the solutions is 5 to 120 s.
Claim 18
Dependent Claim
22 words
A process according to either of the claims 1 and 8, wherein the duration of each rinsing is 60 to 120 s.
Claim 19
Dependent Claim
34 words
A process according to claim 1, wherein the compound to be deposited is chosen from among the chalcogenides, oxides, hydroxides, phosphates, chromates, molybdates, titanates, vanadadates, tungstates, silicates, carbonates and oxalates of a metallic nature.
Claim 20
Dependent Claim
17 words
A process according to claim 1, wherein the substrate is made from metal or a plastic material.
Claim 21
Dependent Claim
28 words
A process according to claim 1 for depositing epitaxial layers on a substrate, wherein a moncrystalline substrate made from said compound and having a given orientation is used.
Claim 22
Dependent Claim
42 words
A process according to claim 1 for depositing epitaxial layers on a substrate, wherein a monocrystalline substrate made from a material differing from the compound to be deposited is used, but has the same crystal mesh as the compound to be deposited.
Claim 23
Dependent Claim
21 words
A process according to claim 21, wherein the monocrystalline substrate is made from metal, a semiconductor material or a dielectric material.
References Cited (Backward Citations)
US3466190A
Cited
US4061930A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-22 | 1990-12-22 | 1991-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-22 | 1994-12-22 | 1995-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-22 | 1998-12-22 | 1999-06-23 | $7700.00 | Window Closed / Lapsed |