Patent US5361720A successfully refreshed from Google Patents.
US5361720A
Expired / Lapsed
US
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Epitaxial deposition
Assignee: BTG International Ltd
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Filing: 1992-12-11
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Granted: 1994-11-08
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Expires: 2012-12-11
Abstract
Abstract A method of manufacture of thin film devices involves the sputtering of an epitaxial barrier layer (11) of a metallic oxide such as magnesia on to which a further epitaxial thin film (12) is deposited. The substrate is preferably alumina and the thin film may be a high temperature superconductive compound of yttrium, barium, copper and oxygen.
Inventors
- 👤 Jan E. Evetts
- 👤 Robert E. Somekh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:14
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/729
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
58 words
A method of manufacture of solid state devices characterised in that it consists essentially of the formation of an epitaxial layer of magnesia by sputtering of material from a magnesium-containing target on to an alumina-containing substrate and the subsequent formation of an epitaxial layer of a compound including yttrium, barium, copper and oxygen on said layer of magnesia.
Claim 2
Independent Claim
58 words
A method of manufacture of solid state devices characterised in that it consists essentially of the formation of an epitaxial layer of magnesia by sputtering of material from a magnesium-containing target on to an alumina-containing substrate and the subsequent formation of an epitaxial layer of a compound including yttrium, barium, copper and oxygen on said layer of magnesia.
Claim 3
Dependent Claim
40 words
A method of manufacture of solid state devices as claimed in claim 1 characterised in that said substrate is heated to a temperature of between 750° C. and 900° C. whilst the material is sputtered from said magnesium containing target.
Claim 4
Dependent Claim
32 words
A method of manufacture of solid state devices as claimed in claim 2 characterised in that an oxidising ambient atmosphere is maintained whilst the material is sputtered from said magnesium containing target.
Claim 5
Dependent Claim
22 words
A method of manufacture of solid state devices as claimed in claim 3 characterised in that the oxidising ambient atmosphere includes oxygen.
Claim 6
Dependent Claim
23 words
A method of manufacture of solid state devices as claimed in claim 3 characterised in that the oxidising ambient atmosphere includes nitrous oxide.
Claim 7
Dependent Claim
26 words
A method of manufacture of solid state devices as claimed in either claim 4 or claim 5 characterised in that the oxidising ambient atmosphere includes argon.
Claim 8
Independent Claim
57 words
A method of forming a barrier layer in a solid state device characterised in that it comprises depositing an epitaxial layer of a superconductor material on a substrate, depositing a monolayer of a second material including a metal and oxygen on said epitaxial layer and depositing a further epitaxial layer of said superconductor material on said monolayer.
Claim 9
Independent Claim
57 words
A method of forming a barrier layer in a solid state device characterised in that it comprises depositing an epitaxial layer of a superconductor material on a substrate, depositing a monolayer of a second material including a metal and oxygen on said epitaxial layer and depositing a further epitaxial layer of said superconductor material on said monolayer.
Claim 10
Dependent Claim
30 words
A method of forming a barrier layer in a solid state device as claimed in claim 7 characterised in that said monolayer is deposited simultaneously with said further epitaxial layer.
Claim 11
Dependent Claim
47 words
A method of forming a barrier layer in a solid state device as claimed in either claim 7 or claim 8 characterised in that a plurality of monolayers of said second material and corresponding further epitaxial layers of said superconductor material are successively deposited on said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-07 | 1998-05-09 | 1998-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-07 | 2002-05-09 | 2002-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-07 | 2006-05-09 | 2006-11-08 | $7700.00 | Window Closed / Lapsed |