Optoelectronic semiconductor having a groove-shaped waveguide

Abstract

Abstract Optoelectronic semiconductor devices which have a groove-shaped waveguide in an oxide layer provided on a silicon substrate are compact, easy to manufacture, and--when the waveguide comprises a non-linear optical material--applicable inter alia for frequency doubling of laser radiation. In known devices, scattering losses occur in the waveguide owing to the roughness of the groove which arises during etching of the groove. Here, the groove and a portion of the oxide layer are formed by local, preferably thermal, oxidation of the silicon substrate. The groove formed at the area of the oxidation mask has a smoother surface and as a result the waveguide has lower losses. When the device includes a GaAs/AlGaAs diode laser, it forms an efficient, compact, inexpensive and blue-emitting laser source which is suitable for use in an optical disc system. Preferably, the diode laser is situated in a deeper and wider further groove in the oxide layer. The devices may be made by a method in which, a layer of silicon oxide and a groove therein are formed simultaneously through the use of local oxidation. Grooves of different widths and depths are obtained by using masks of various widths.

Inventors

• 👤 Antonius H. J. Venhuizen

Bibliographic Details