Fully CMOS-type SRAM device with grounding wire having contact holes

Claim 1

A fully CMOS-type static random access memory device comprising; MOS transistors of a first conductivity type constituting driver transistors of a flip-flop type memory cell, formed on a main surface of a semiconductor substrate; MOS thin film transistors of a second conductivity type constituting load transistors of said flip-flop memory cell, formed on the main surface of said semiconductor substrate; a conductive thin film extending between said MOS transistors and said MOS thin film transistors, said conductive film being connected with a fixed potential power source and having holes opened in its contact hole portions for connecting said MOS transistors with said MOS thin film transistor; and transfer MOS transistors of said first conductivity type having sources connected with drains of said MOS transistors, drains connected with bit lines through drawing electrodes, and a common gate connected to a word line, formed on the main surface of said semiconductor substrate, wherein said conductive thin film extends on said transfer MOS transistors and has holes in its contact hole portions for connecting drains of said transfer MOS transistors and said drawing electrodes.