US5352487A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the formation of SiO2 films
Assignee: Osram Sylvania Inc
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Filing: 1992-08-31
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Granted: 1994-10-04
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Expires: 2012-08-31
Abstract
Abstract An apparatus and method for the low temperature deposition of SiO 2 in a low pressure chemical vapor deposition system is disclosed. The apparatus makes use of a prereactor to form an activated form of diacetoxyditertiarybutoxysilane (DADBS) from which SiO 2 is deposited. The prereactor may be positioned upstream of an SiO 2 deposition reactor or may be incorporated into the front end thereof.
Inventors
- 👤 Keith A. Klinedinst
- 👤 Joseph E. Lester
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:17
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/44; C23C16/448; C23C16/452
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
140 words
A method for the deposition of SiO 2 onto a substrate which comprises the steps of: a) providing a feed stream comprising gas-phase DADBS to a first reactor; b) heating the feed stream in said first reactor to a first temperature between about 450° C. and 550° C. to allow the formation of activated DADBS and for a time sufficient to form a mixture of activated DADBS and unactivated DADBS; and c) contacting the mixture with a substrate in a second reactor while maintaining the substrate and the mixture in said second reactor at a second temperature between about 400° C. to 450° C., said second temperature 50° C. lower than said first temperature, for a time sufficient to allow SiO 2 to deposit from the mixture onto the substrate, said first and said second reactors being separate and interconnected.
Claim 2
Independent Claim
140 words
A method for the deposition of SiO 2 onto a substrate which comprises the steps of: a) providing a feed stream comprising gas-phase DADBS to a first reactor; b) heating the feed stream in said first reactor to a first temperature between about 450° C. and 550° C. to allow the formation of activated DADBS and for a time sufficient to form a mixture of activated DADBS and unactivated DADBS; and c) contacting the mixture with a substrate in a second reactor while maintaining the substrate and the mixture in said second reactor at a second temperature between about 400° C. to 450° C., said second temperature 50° C. lower than said first temperature, for a time sufficient to allow SiO 2 to deposit from the mixture onto the substrate, said first and said second reactors being separate and interconnected.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-03 | 1998-04-04 | 1998-10-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-03 | 2002-04-04 | 2002-10-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-03 | 2006-04-04 | 2006-10-04 | $7700.00 | Window Closed / Lapsed |