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US5352330A
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Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption
Assignee: Texas Instruments Inc
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Filing: 1992-09-30
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Granted: 1994-10-04
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Expires: 2012-09-30
Abstract
Abstract The process of using electron beam induced stimulated desorption chemistry to produce structures of nanometer order size on surfaces. By passivating a reconstructed surface and selectively removing such passivation with an electron beam through the electron stimulated desorption effect, the adsorption of other atoms and/or molecules is controlled at predetermined regions and/or lines on the surface.
Inventors
- 👤 Robert M. Wallace
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:14
CPC Classifications
B; B82; B82Y; B82Y30/00; C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; C23C16/06; C23C16/08; C23C16/16; C23C8/00; C23C8/02; C23C8/80; H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10P; H10P14/00; H10P14/60; H10P14/61; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/65; H10P14/6502; H10P14/6508; H10P34/00; H10P34/40; Y; Y10; Y10S; Y10S117/00; Y10S117/905; Y10S977/00; Y10S977/70; Y10S977/832; Y10S977/835; Y10S977/84; Y10S977/888; Y10S977/902
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
103 words
A method of forming a structure comprising the steps of: (a) providing a surface passivated with a passivating species; (b) providing a controllable, energy tunable electron beam having a voltage of from 100 to 2000 eV and a current of 5 nanoamperes; (c) passing said controllable electron beam over selected portions of said passivated surface in a controlled manner to desorb said passivating species at said selected portions of said passivated surface to provide regions of reactivity at said selected portions of said passivated surface; and (d) reacting a species with said surface at said regions of reactivity to provide said desired structure.
Claim 2
Independent Claim
103 words
A method of forming a structure comprising the steps of: (a) providing a surface passivated with a passivating species; (b) providing a controllable, energy tunable electron beam having a voltage of from 100 to 2000 eV and a current of 5 nanoamperes; (c) passing said controllable electron beam over selected portions of said passivated surface in a controlled manner to desorb said passivating species at said selected portions of said passivated surface to provide regions of reactivity at said selected portions of said passivated surface; and (d) reacting a species with said surface at said regions of reactivity to provide said desired structure.
Claim 3
Dependent Claim
10 words
The method of claim 1 wherein said surface is crystalline.
Claim 4
Dependent Claim
18 words
The method of claim 2 further including the step of atomically cleaning said surface prior to step (a).
Claim 5
Dependent Claim
18 words
The method of claim 2 further including the step of atomically cleaning said surface prior to step (a).
Claim 6
Dependent Claim
27 words
The method of claim 1 wherein said step of passivating comprises the step of adsorbing at reactive sites on said surface one of hydrogen, ammonia and nitrogen.
Claim 7
Dependent Claim
27 words
The method of claim 2 wherein said step of passivating comprises the step of adsorbing at reactive sites on said surface one of hydrogen, ammonia and nitrogen.
Claim 8
Dependent Claim
27 words
The method of claim 3 wherein said step of passivating comprises the step of adsorbing at reactive sites on said surface one of hydrogen, ammonia and nitrogen.
Claim 9
Dependent Claim
27 words
The method of claim 4 wherein said step of passivating comprises the step of adsorbing at reactive sites on said surface one of hydrogen, ammonia and nitrogen.
Claim 10
Dependent Claim
24 words
The method of claim 1 wherein said surface is a semiconductor surface and said species is taken from the class consisting of semiconductor dopants.
Claim 11
Dependent Claim
24 words
The method of claim 2 wherein said surface is a semiconductor surface and said species is taken from the class consisting of semiconductor dopants.
Claim 12
Dependent Claim
24 words
The method of claim 4 wherein said surface is a semiconductor surface and said species is taken from the class consisting of semiconductor dopants.
Claim 13
Dependent Claim
24 words
The method of claim 8 wherein said surface is a semiconductor surface and said species is taken from the class consisting of semiconductor dopants.
Claim 14
Dependent Claim
28 words
The method of claim 1 wherein said surface is a semiconductor surface and said species is taken from the class consisting of metal-carbonyl gas species and tungsten hexafluoride.
Claim 15
Dependent Claim
28 words
The method of claim 2 wherein said surface is a semiconductor surface and said species is taken from the class consisting of metal-carbonyl gas species and tungsten hexafluoride.
Claim 16
Dependent Claim
28 words
The method of claim 4 wherein said surface is a semiconductor surface and said species is taken from the class consisting of metal-carbonyl gas species and tungsten hexafluoride.
Claim 17
Dependent Claim
28 words
The method of claim 8 wherein said surface is a semiconductor surface and said species is taken from the class consisting of metal-carbonyl gas species and tungsten hexafluoride.
Claim 18
Dependent Claim
17 words
The method of claim 1 wherein the width of said electron beam is up to 0.1 nanometer.
Claim 19
Dependent Claim
17 words
The method of claim 2 wherein the width of said electron beam is up to 0.1 nanometer.
Claim 20
Dependent Claim
17 words
The method of claim 9 wherein the width of said electron beam is up to 0.1 nanometer.
Claim 21
Dependent Claim
17 words
The method of claim 10 wherein the width of said electron beam is up to 0.1 nanometer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-10-03 | 1998-04-04 | 1998-10-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-03 | 2002-04-04 | 2002-10-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-03 | 2006-04-04 | 2006-10-04 | $7700.00 | Window Closed / Lapsed |