Patent US5351081A successfully refreshed from Google Patents.
US5351081A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-state imaging device having a light barrier layer
Assignee: Sony Corp
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Filing: 1993-12-23
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Granted: 1994-09-27
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Expires: 2013-12-23
Abstract
Abstract A solid-state imaging device in which a light-barrier layer is formed on transfer electrodes on top of a vertical pixel isolating region by an insulating film. The light-barrier layer is adapted to overlie the lateral sides of the transfer electrodes and the peripheral region of a photosensor region neighboring on the vertical pixel isolating region. By provision of the light-barrier layer, the light incident on the vertical pixel isolating region is stopped to reduce smear charges which might otherwise be intruded into the vertical charge transfer section.
Inventors
- 👤 Hiromichi Matsui
- 👤 Kazuomi Ezoe
- 👤 Toshiro Kurusu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 00:44
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F77/00; H10F77/30; H10F77/306; H10F77/331; H10F77/334; H10F39/153
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
106 words
A CCD comprising: a plurality of pixels arrayed in a plurality of vertical columns, a plurality of vertical transfer sections arrayed parallel to said columns of pixels and completely covered with a light-barrier layer, a plurality of vertical pixel isolating regions adapted for vertically isolating said pixels from one another, by means of a potential barrier formed in a semiconductor substrate and a light-barrier layer, and said vertical pixel isolating regions each having a down slope of potential in the direction of said transfer section and arrayed between rows of said pixels, wherein said light-barrier layer completely covers the whole of said vertical pixel isolating region.
Claim 2
Dependent Claim
106 words
A CCD comprising: a plurality of pixels arrayed in a plurality of vertical columns, a plurality of vertical transfer sections arrayed parallel to said columns of pixels and completely covered with a light-barrier layer, a plurality of vertical pixel isolating regions adapted for vertically isolating said pixels from one another, by means of a potential barrier formed in a semiconductor substrate and a light-barrier layer, and said vertical pixel isolating regions each having a down slope of potential in the direction of said transfer section and arrayed between rows of said pixels, wherein said light-barrier layer completely covers the whole of said vertical pixel isolating region.
Claim 3
Dependent Claim
22 words
The CCD according to claim 1 wherein a vertical transfer electrode of said vertical transfer section is comprised of two polysilicon electrodes.
Claim 4
Dependent Claim
16 words
The CCD according to claim 1 wherein said light-barrier layer is comprised of an aluminum layer.
Claim 5
Dependent Claim
48 words
The CCD according to claim 1 wherein impurity concentration of said vertical pixel isolating region is adjusted to prevent a channel from being formed in said vertical pixel isolating region when a driving current is supplied to a transfer electrode on top of the vertical pixel isolating region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-26 | 1998-03-28 | 1998-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-26 | 2002-03-28 | 2002-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-26 | 2006-03-28 | 2006-09-27 | $7700.00 | Window Closed / Lapsed |