Solid-state image sensing device and manufacture thereof

Abstract

Abstract PURPOSE:To ensure sufficient breakdown strength characteristic and to obtain stable low smear characteristics by removing by etching a second insulating layer at a slope so that a photosensitive pixel is recessed, and protecting, in this case, a first insulating layer by using an etching stopper layer formed between the first and second insulating layers to eliminate erosion. CONSTITUTION:A silicon nitride film (Si3N4) 15 having high optical transparency through insulating films 12, 13, 14 on a first transfer electrode 8, a second transfer electrode 9 and an N<+> type impurity region 4, and the film 15 performs as an etching stopper when the insulating film above the region 4 is removed by etching. An optical shielding film 11 is formed on an oxide film 10 above the first and second electrodes 8, 9, also formed at the sides of the electrodes 8, 9, and the ends are arrived at the film 15. The film 15 is formed between the electrodes 8, 9 and the film 11. Thus, an incident oblique light to a section except a photoelectric conversion region can be largely reduced, and smear phenomenon due to the oblique incident light can be accordingly decreased.

Inventors

• 👤 Hajime Otake

Bibliographic Details