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US5349494A
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Semiconductor device with capacitor insulating film and method for fabricating the same
Assignee: Renesas Electronics Corp
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Filing: 1992-07-28
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Granted: 1994-09-20
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Expires: 2012-07-28
Abstract
Abstract A semiconductor device has a capacitor insulating film composed of a first and a second silicon nitride film. The surface of a lower electrode of impurity-doped polysilicon is transformed into the first silicon nitride film by thermal nitriding, and thereafter the second silicon nitride film is formed by chemical vapor deposition. An upper electrode is formed on the second silicon nitride film. A silicon oxide film may be formed on the second silicon nitride film by thermal oxidation. The capacitor insulating film which has a thickness of 5 nm or less in equivalent thickness of an oxide film reduces a leakage current and improves a long-term product reliability.
Inventors
- 👤 Koichi Ando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:20
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10D; H10D1/00; H10D1/60; H10D1/68; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10P14/63; H10P14/6302; H10P14/6316; H10P14/6322; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6522; H10P14/66; H10P14/662; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
91 words
A semiconductor device comprising: a lower electrode of impurity-doped polysilicon formed on an electrical insulating film on a semiconductor substrate; a capacitor insulating film covering said lower electrode, said capacitor insulating film including a first silicon nitride film formed by thermal nitriding and a second silicon nitride film formed by chemical vapor deposition, said first silicon nitride film being disposed on essentially only said lower electrode and said second silicon nitride film being disposed on an entire surface of said semiconductor device; and an upper electrode covering said capacitor insulating film.
Claim 2
Dependent Claim
91 words
A semiconductor device comprising: a lower electrode of impurity-doped polysilicon formed on an electrical insulating film on a semiconductor substrate; a capacitor insulating film covering said lower electrode, said capacitor insulating film including a first silicon nitride film formed by thermal nitriding and a second silicon nitride film formed by chemical vapor deposition, said first silicon nitride film being disposed on essentially only said lower electrode and said second silicon nitride film being disposed on an entire surface of said semiconductor device; and an upper electrode covering said capacitor insulating film.
Claim 3
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein said second silicon nitride film has a thickness of approximately 4 nanometers.
Claim 4
Dependent Claim
38 words
A semiconductor device according to claim 1, wherein said first silicon nitride film has a greater thickness than that of said second silicon nitride film as measured by capacitance of an equivalent thickness of a silicon oxide film.
Claim 5
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein said capacitor insulating film further includes a silicon oxide film formed on said second silicon nitride film by thermal oxidation.
Claim 6
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said upper electrode is made of polycrystalline silicon.
Claim 7
Independent Claim
135 words
A method for fabricating a semiconductor device having a lower electrode of impurity-doped polysilicon formed on an electrical insulating film on a semiconductor substrate, a capacitor insulating film covering said lower electrode, and an upper electrode covering said capacitor insulating film, comprising the steps of: forming a first silicon nitride film essentially only on a surface of said lower electrode by thermal nitriding of said lower electrode after forming said lower electrode at a predetermined position on a surface of said electrical insulating film, said electrical insulating film being formed on said semiconductor substrate; forming a second silicon nitride film by chemical vapor deposition to cover an entire resultant surface after a formation of said first silicon nitride film in the previous step; and forming said upper electrode to cover said second silicon nitride film.
Claim 8
Independent Claim
135 words
A method for fabricating a semiconductor device having a lower electrode of impurity-doped polysilicon formed on an electrical insulating film on a semiconductor substrate, a capacitor insulating film covering said lower electrode, and an upper electrode covering said capacitor insulating film, comprising the steps of: forming a first silicon nitride film essentially only on a surface of said lower electrode by thermal nitriding of said lower electrode after forming said lower electrode at a predetermined position on a surface of said electrical insulating film, said electrical insulating film being formed on said semiconductor substrate; forming a second silicon nitride film by chemical vapor deposition to cover an entire resultant surface after a formation of said first silicon nitride film in the previous step; and forming said upper electrode to cover said second silicon nitride film.
Claim 9
Dependent Claim
40 words
A method for fabricating a semiconductor device according to claim 6, further comprising, after the step of forming the second silicon nitride film, tile step of forming a silicon oxide film on said second silicon nitride film by thermal oxidation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-09-19 | 1998-03-21 | 1998-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-19 | 2002-03-21 | 2002-09-20 | $3760.00 | Window Closed / Lapsed |
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