US4746630A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing recessed field oxide with improved sidewall characteristics
Assignee: HP Inc
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Filing: 1986-09-17
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Granted: 1988-05-24
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Expires: 2006-09-17
Abstract
Abstract A method for producing field oxide in a silicon substrate by forming a thin oxide layer over the surface of the substrate, forming a thin nitride layer over the thin oxide layer, forming a thick oxide over the thin nitride layer, forming a thick nitride layer over the thick oxide layer; patterning all four of the layers to espose the surface of the substrate where the field oxide is to be formed; and growing the field oxide. Preferably, before the field oxide is grown, trenches are formed into the substrate so that the upper surfaces of the field oxide are substantially planar with the upper surfaces of the substrate. The thin oxide layer minimizes bird beak formation, and eases the removal of the oxide/nitride/oxide/nitride layers. The resultant structure is both planar and bird's beak-free, and is therefore well suited to producing VLSI components having dimensions less than 0.5 microns.
Inventors
- 👤 Chi-Hung Hui
- 👤 Paul V. Voorde
- 👤 John L. Moll
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:58
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10P50/00; H10P50/69; H10P50/691; H10P50/692; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S438/00; Y10S438/954
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
176 words
A method for producing field isolation regions for a silicon-based semicondutor substrate comprising: forming four-layer blocking structures over field regions of said substrate by: forming a first insulation layer of a silicon oxide over a surface of said substrate; forming a first inhibiting layer of a silicon nitride over said first insulation layer; forming a second insulation layer of a silicon oxide over said first inhibiting layer, said second insulation layer being thicker than said first insulation layer; forming a second inhibiting layer of a silicon nitride over said second insulation layer, said second inhibiting layer being thicker than said first inhibiting layer; patterning said first insulation layer, said first inhibiting layer, said second insulation layer, and said second inhibiting layer such that portions of said substrate surface where said isolation regions are to be formed become uncovered, and such that remaining portions of said substrate surface are covered by four layer insulation/inhibiting/insulation/inhibiting blocking structures; and forming field isolation regions at portions of said surface of said substrate which are not covered by said blocking structures.
Claim 2
Independent Claim
176 words
A method for producing field isolation regions for a silicon-based semicondutor substrate comprising: forming four-layer blocking structures over field regions of said substrate by: forming a first insulation layer of a silicon oxide over a surface of said substrate; forming a first inhibiting layer of a silicon nitride over said first insulation layer; forming a second insulation layer of a silicon oxide over said first inhibiting layer, said second insulation layer being thicker than said first insulation layer; forming a second inhibiting layer of a silicon nitride over said second insulation layer, said second inhibiting layer being thicker than said first inhibiting layer; patterning said first insulation layer, said first inhibiting layer, said second insulation layer, and said second inhibiting layer such that portions of said substrate surface where said isolation regions are to be formed become uncovered, and such that remaining portions of said substrate surface are covered by four layer insulation/inhibiting/insulation/inhibiting blocking structures; and forming field isolation regions at portions of said surface of said substrate which are not covered by said blocking structures.
Claim 3
Dependent Claim
22 words
A method as recited in claim 1 wherein said first insulation layer and said second insulation layer are formed by vapor deposition.
Claim 4
Dependent Claim
22 words
A method as recited in claim 1 wherein said first inhibiting layer and said second inhibiting layer are formed by vapor deposition.
Claim 5
Dependent Claim
19 words
A method as recited in claim 1 wherein said isolation regions are grown into said surface of said substrate.
Claim 6
Dependent Claim
22 words
A method as recited in claim 1 wherein said isolation regions are grown in an oxidizing environment at higher than ambient temperatures.
Claim 7
Dependent Claim
24 words
A method as recited in claim 1 further comprising implanting a doping substance into said substrate where the isolation regions will be subsequently formed.
Claim 8
Dependent Claim
44 words
A method as recited in claim 6 further comprising forming trenches in said surface of said substrate where said isolation regions are to be subsequently formed, such that the upper surfaces of said isolation regions and said surface of said substrate are substantially planar.
Claim 9
Dependent Claim
41 words
A method as recited in claim 1 further comprising forming trenches in said substrate where said isolation regions are to be subsequently formed, such that the upper surfaces of said isolation regions and said surface of said substrate are substantially planar.
Claim 10
Independent Claim
134 words
A method for producing field oxide for a silicon substrate, said method comprising: forming a first silicon oxide layer over said surface of said substrate; forming a first silicon nitride layer over said first oxide layer; forming a second silicon oxide layer over said first nitride layer, said second oxide layer being thicker than said first oxide layer; forming a second silicon nitride layer over said second oxide layer, said second nitride layer being thicker than said first nitride layer; patterning said first oxide layer, said first nitride layer, said second oxide layer, and said second nitride layer to expose said surface of said substrate where said field oxide is to be formed such that remaining portions of said substrate surface are covered by a four layer oxide/nitride/oxide/nitride structure; and forming said field oxide.
Claim 11
Independent Claim
134 words
A method for producing field oxide for a silicon substrate, said method comprising: forming a first silicon oxide layer over said surface of said substrate; forming a first silicon nitride layer over said first oxide layer; forming a second silicon oxide layer over said first nitride layer, said second oxide layer being thicker than said first oxide layer; forming a second silicon nitride layer over said second oxide layer, said second nitride layer being thicker than said first nitride layer; patterning said first oxide layer, said first nitride layer, said second oxide layer, and said second nitride layer to expose said surface of said substrate where said field oxide is to be formed such that remaining portions of said substrate surface are covered by a four layer oxide/nitride/oxide/nitride structure; and forming said field oxide.
Claim 12
Dependent Claim
26 words
A method as recited in claim 9 further comprising forming trenches into said surface of said substrate where said field oxide is to be subsequently formed.
Claim 13
Dependent Claim
23 words
A method as recited in claim 9 further comprising implanting boron into said substrate where said field oxide is to be subsequently formed.
Claim 14
Dependent Claim
44 words
A method as recited in claim 9 wherein said first oxide layer, said first nitride layer, said second oxide layer, and said second nitride layer are formed by vapor deposition; and wherein said field oxide is grown in an oxidizing enviroment at elevated temperatures.
Claim 15
Dependent Claim
49 words
A method as recited in claim 9 further comprising removing said first oxide layer, said first nitride layer, said second oxide layer, and said second nitride layer after forming said field oxide, whereby the upper surfaces of said field oxide are substantially planar with said surface of said substrate.
References Cited (Backward Citations)
US4472459A
Cited
US4583281A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1991-05-24 | 1991-11-23 | 1992-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-24 | 1995-11-23 | 1996-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-24 | 1999-11-23 | 2000-05-24 | $7700.00 | Window Closed / Lapsed |