US5348619A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal selective polymer removal
Assignee: Texas Instruments Inc
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Filing: 1992-09-03
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Granted: 1994-09-20
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Expires: 2012-09-03
Abstract
Abstract A metal selective polymer removal process is disclosed which prevents metal lift-off for use especially suited for ULSI fabrication.
Inventors
- 👤 Brynne K. Bohannon
- 👤 Daniel J. Syverson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:24
CPC Classifications
H; H10; H10P; H10P95/00; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10P50/71
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
57 words
A process for removal of metal etch byproducts from a semiconductor wafer comprising the following steps: introducing HF into a chamber containing said wafer which includes non-water soluble byproducts thereon, introducing N 2 +xH 2 O, where x is a real number, into said chamber; and removing soluble byproduct from said wafer after performing the above steps.
Claim 2
Dependent Claim
57 words
A process for removal of metal etch byproducts from a semiconductor wafer comprising the following steps: introducing HF into a chamber containing said wafer which includes non-water soluble byproducts thereon, introducing N 2 +xH 2 O, where x is a real number, into said chamber; and removing soluble byproduct from said wafer after performing the above steps.
Claim 3
Dependent Claim
11 words
A process as recited in claim 1 where HF is anhydrous.
Claim 4
Dependent Claim
62 words
A process for removing post etch metal silicate-containing residue from a metal structure comprising the following steps: introducing vapor HF into a chamber containing said metal structure which includes non water soluble residue thereon; passing a gas over water and introducing the result into said chamber; and removing said post etch metal silicate-containing residue from said structure after performing the above steps.
Claim 5
Dependent Claim
62 words
A process for removing post etch metal silicate-containing residue from a metal structure comprising the following steps: introducing vapor HF into a chamber containing said metal structure which includes non water soluble residue thereon; passing a gas over water and introducing the result into said chamber; and removing said post etch metal silicate-containing residue from said structure after performing the above steps.
Claim 6
Dependent Claim
17 words
A process as recited in claim 1 wherein said HF is vapor HF made form aqueous HF.
Claim 7
Dependent Claim
16 words
A process as recited in claim 1 which is performed within a wafer vapos phase cleaner.
Claim 8
Dependent Claim
59 words
A process for removing sidewall polymer from the posts of a deformable mirror device comprising the following steps: introducing HF into a chamber containing said device which includes non-water soluble byproducts thereon, introducing N 2 +xH 2 O, where x is a real number, into said chamber; and removing soluble byproduct from said device after performing the above steps.
Claim 9
Dependent Claim
59 words
A process for removing sidewall polymer from the posts of a deformable mirror device comprising the following steps: introducing HF into a chamber containing said device which includes non-water soluble byproducts thereon, introducing N 2 +xH 2 O, where x is a real number, into said chamber; and removing soluble byproduct from said device after performing the above steps.
Claim 10
Dependent Claim
15 words
A process as recited in claim 6 which is performed within a vapor phase cleaner.
Claim 11
Dependent Claim
51 words
A process for removing post etch residue from a metal structure comprising the following steps: introducing anhydrous HF into a chamber containing said metal structure which includes non water soluble residue thereon; introducing water vapor into said chamber; and removing said post residue from said structure after performing the above steps.
Claim 12
Dependent Claim
51 words
A process for removing post etch residue from a metal structure comprising the following steps: introducing anhydrous HF into a chamber containing said metal structure which includes non water soluble residue thereon; introducing water vapor into said chamber; and removing said post residue from said structure after performing the above steps.
Claim 13
Dependent Claim
21 words
A process as recited in claim 8 wherein the removal of said post etch residue includes rinsing said structure with water.
Claim 14
Dependent Claim
58 words
A process for removing post etch residue from a metal structure comprising the following steps: introducing anhydrous HF into a chamber containing said metal structure which includes non water soluble residue thereon; passing a gas over water and introducing the result into said chamber: and removing said post etch residue from said structure after performing the above steps.
Claim 15
Dependent Claim
58 words
A process for removing post etch residue from a metal structure comprising the following steps: introducing anhydrous HF into a chamber containing said metal structure which includes non water soluble residue thereon; passing a gas over water and introducing the result into said chamber: and removing said post etch residue from said structure after performing the above steps.
Claim 16
Dependent Claim
21 words
A process as recited in claim 10 wherein the removal of said post etch residue includes rinsing said structure with water.
Claim 17
Dependent Claim
12 words
A process as recited in claim 10 wherein said gas is nitrogen.
Claim 18
Dependent Claim
12 words
A process as recited in claim 3 wherein said gas is nitrogen.
Claim 19
Dependent Claim
21 words
A process as recited in claim 3 wherein the removal of said post etch residue includes rinsing said structure with water.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-19 | 1998-03-21 | 1998-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-19 | 2002-03-21 | 2002-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-19 | 2006-03-21 | 2006-09-20 | $7700.00 | Window Closed / Lapsed |