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US5347489A
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Method and circuitry for preconditioning shorted rows in a nonvolatile semiconductor memory incorporating row redundancy
Assignee: Intel Corp
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Filing: 1992-04-21
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Granted: 1994-09-13
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Expires: 2012-04-21
Abstract
Abstract A method of preconditioning and verifying the preconditioning of memory cells within shorted rows of a memory array is described. Preconditioning begins by applying a preconditioning pulse to two memory cells that are shorted together. Afterward, one of the two shorted cells is read by applying a nominal gate voltage level to the gates of both of the shorted memory cells. At the same time, a shorted reference cell is read by applying a voltage level to its gate which less than the nominal gate voltage level. While the read voltages are being applied to the array cells and the shorted reference cell, the threshold voltage of one of the two shorted array cells is compared to the threshold voltage of the shorted reference cell. The shorted reference cell has a threshold voltage level that is lower than the level normally required for preconditioning but which is sufficient to prevent the quick overerasure of the shorted memory cells.
Inventors
- 👤 Amit Merchant
- 👤 Mickey L. Fandrich
- 👤 Neal Mielke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:19
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/70; G11C29/78; G11C29/80; G11C29/816; G11C29/82; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C16/3436; G11C16/344; G11C16/3445; G11C16/3468; G11C16/3477
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
145 words
A method of preconditioning a shorted memory cell in a nonvolatile semiconductor memory array including a multiplicity of normal memory cells, each memory cell having a threshold voltage, preconditioning raising the threshold voltage of the shorted memory cell to a level sufficient to prevent its leaking current during erase verification of normal memory cells, the method comprising the steps of: a) applying a precondition pulse to the shorted memory cell; b) comparing the threshold voltage of the shorted memory cell to a shorted cell precondition reference voltage level, the shorted cell precondition reference voltage level being lower than a normal cell precondition reference voltage level above which the threshold voltage of normal memory cells are raised by preconditioning; and c) repeating steps a) through b) until the threshold voltage level of the shorted memory cell is greater than the shorted cell precondition reference voltage level.
Claim 2
Independent Claim
145 words
A method of preconditioning a shorted memory cell in a nonvolatile semiconductor memory array including a multiplicity of normal memory cells, each memory cell having a threshold voltage, preconditioning raising the threshold voltage of the shorted memory cell to a level sufficient to prevent its leaking current during erase verification of normal memory cells, the method comprising the steps of: a) applying a precondition pulse to the shorted memory cell; b) comparing the threshold voltage of the shorted memory cell to a shorted cell precondition reference voltage level, the shorted cell precondition reference voltage level being lower than a normal cell precondition reference voltage level above which the threshold voltage of normal memory cells are raised by preconditioning; and c) repeating steps a) through b) until the threshold voltage level of the shorted memory cell is greater than the shorted cell precondition reference voltage level.
Claim 3
Independent Claim
263 words
A method of preconditioning and verifying the preconditioning of a first memory cell shorted to a second memory cell in a nonvolatile semiconductor memory array including a multiplicity of normal memory cells, each memory cell having a threshold voltage and a gate, preconditioning raising the threshold voltage of the first memory cell and the second memory cell to a level sufficient to prevent their leaking current during erase verification of normal memory cells, the method comprising the steps of: a) applying a first preconditioning pulse to the first memory cell and the second memory cell in parallel; b) reading the first memory cell by applying a first gate voltage level to the gates of the first memory cell and the second memory cell; c) reading a shorted reference cell having a gate and a shorted cell precondition reference voltage level by applying a second gate voltage level to the gate of the shorted reference cell, the second gate voltage level being less than the first gate voltage level, the shorted cell precondition reference voltage being lower than a normal cell precondition reference voltage above which the threshold voltages of normal memory cells are raised by preconditioning; d) comparing the threshold voltage of the first memory cell to the shorted cell precondition reference voltage to determine whether the threshold voltage of the first memory cell is greater than the shorted cell precondition reference voltage; and e) repeating steps a) through d) until the threshold voltages of the first memory cell and the second memory cell are greater than the shorted cell precondition reference voltage.
Claim 4
Independent Claim
263 words
A method of preconditioning and verifying the preconditioning of a first memory cell shorted to a second memory cell in a nonvolatile semiconductor memory array including a multiplicity of normal memory cells, each memory cell having a threshold voltage and a gate, preconditioning raising the threshold voltage of the first memory cell and the second memory cell to a level sufficient to prevent their leaking current during erase verification of normal memory cells, the method comprising the steps of: a) applying a first preconditioning pulse to the first memory cell and the second memory cell in parallel; b) reading the first memory cell by applying a first gate voltage level to the gates of the first memory cell and the second memory cell; c) reading a shorted reference cell having a gate and a shorted cell precondition reference voltage level by applying a second gate voltage level to the gate of the shorted reference cell, the second gate voltage level being less than the first gate voltage level, the shorted cell precondition reference voltage being lower than a normal cell precondition reference voltage above which the threshold voltages of normal memory cells are raised by preconditioning; d) comparing the threshold voltage of the first memory cell to the shorted cell precondition reference voltage to determine whether the threshold voltage of the first memory cell is greater than the shorted cell precondition reference voltage; and e) repeating steps a) through d) until the threshold voltages of the first memory cell and the second memory cell are greater than the shorted cell precondition reference voltage.
Claim 5
Dependent Claim
23 words
The method of claim 2 wherein the second gate voltage level is low enough to prevent gradual programming of the shorted reference cell.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-09-12 | 1998-03-14 | 1998-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-12 | 2002-03-14 | 2002-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-12 | 2006-03-14 | 2006-09-13 | $7700.00 | Window Closed / Lapsed |