Short channel transistors

Claim 2

A short channel field effect transistor comprising a semiconductor substrate having a given surface and a given type dopant, a source electrode disposed within said semiconductor substrate, said source electrode having a dopant of a type opposite to the given type dopant and an edge, said source electrode generating a depletion region penetrating into said semiconductor substrate, a channel disposed in said semiconductor substrate adjacent to said source electrode providing a source electrode-channel interface at the edge of said source electrode, a region disposed below said source electrode within said semiconductor substrate having the same type dopant as that of said semiconductor substrate and an edge, the edge of said region being aligned along a line perpendicular to the given surface of said semiconductor substrate with the source electrode-channel interface, said region having a higher dopant concentration than that of the dopant of said semiconductor substrate sufficient to substantially prevent penetration of the depletion region generated by said source electrode into said semiconductor substrate, and a supply voltage terminal coupled to said source electrode.

Claim 3

A short channel field effect transistor as set forth in claim 1 wherein said source electrode is a diffusion region disposed at the surface of said semiconductor substrate.

Claim 4

A short channel field effect transistor as set forth in claim 2 wherein said source electrode is disposed between said given region and the surface of said semiconductor substrate.

Claim 5

A short channel field effect transistor comprising a semiconductor substrate having a given surface and a given type dopant with a dopant concentration between 10 15 and 10 17 atoms per cubic centimeter, a source electrode including a diffusion region disposed within said semiconductor substrate at the surface thereof, said source electrode having a dopant of a type opposite to the given type dopant with a dopant concentration higher than 10 19 atoms per cubic centimeter and an edge, said source electrode generating a depletion region penetrating into said semiconductor substrate, a channel disposed in said semiconductor substrate adjacent to said source electrode providing a source electrode-channel interface at the edge of said source electrode, a given region disposed below said source electrode within said semiconductor substrate having the same type dopant as that of said semiconductor substrate and an edge, the edge of said given region being aligned along a line perpendicular to the given surface of said semiconductor substrate with the source electrode-channel interface, said given region having sufficient dopant concentration between 10 17 and 10 19 atoms per cubic centimeter to substantially prevent penetration of the depletion region generated by said source electrode into said semiconductor substrate, said source electrode further being disposed between said given region and the surface of said semiconductor electrode, and a supply voltage terminal coupled to said source electrode.

Claim 6

A short channel field effect transistor comprising a semiconductor substrate having a given surface and a given type dopant with a dopant concentration between 10 15 and 10 17 atoms per cubic centimeter, a source electrode including a diffusion region disposed within said semiconductor substrate at the surface thereof, said source electrode having a dopant of a type opposite to the given type dopant with a dopant concentration higher than 10 19 atoms per cubic centimeter and an edge, said source electrode generating a depletion region penetrating into said semiconductor substrate, a channel disposed in said semiconductor substrate adjacent to said source electrode providing a source electrode-channel interface at the edge of said source electrode, a given region disposed below said source electrode within said semiconductor substrate having the same type dopant as that of said semiconductor substrate and an edge, the edge of said given region being aligned along a line perpendicular to the given surface of said semiconductor substrate with the source electrode-channel interface, said given region having sufficient dopant concentration between 10 17 and 10 19 atoms per cubic centimeter to substantially prevent penetration of the depletion region generated by said source electrode into said semiconductor substrate, said source electrode further being disposed between said given region and the surface of said semiconductor electrode, and a supply voltage terminal coupled to said source electrode.

Claim 7

A short channel field effect transistor as set forth in claim 4 wherein said given region has a depth of peak dopant concentration between 0.1 and 0.35 microns from the surface of said semiconductor substrate.

Claim 8

A short channel field effect transistor as set forth in claim 5 wherein the peak dopant concentration of said given region is spaced from said source electrode.

Claim 9

In a field effect transistor having a channel less than 0.5 microns, a semiconductor substrate having a planar surface and a given type dopant, an electrode diffusion having an edge disposed in said semiconductor substrate, said electrode diffusion generating a depletion region penetrating into said semiconductor substrate, a region having an edge and the same type dopant as that of said semiconductor substrate disposed beneath said electrode diffusion in said semiconductor substrate, the edge of said region and the edge of said electrode diffusion being aligned substantially along a line perpendicular to the planar surface of said semiconductor substrate, said region having a higher dopant concentration than that of the dopant of said semiconductor substrate sufficient to prevent penetration of the depletion region generated by said electrode diffusion into said semiconductor substrate, an electrical conductor connected to said electrode diffusion, and means for applying a voltage to said electrical conductor.

Claim 10

In a field effect transistor having a channel less than 0.5 microns, a semiconductor substrate having a planar surface and a given type dopant, an electrode diffusion having an edge disposed in said semiconductor substrate, said electrode diffusion generating a depletion region penetrating into said semiconductor substrate, a region having an edge and the same type dopant as that of said semiconductor substrate disposed beneath said electrode diffusion in said semiconductor substrate, the edge of said region and the edge of said electrode diffusion being aligned substantially along a line perpendicular to the planar surface of said semiconductor substrate, said region having a higher dopant concentration than that of the dopant of said semiconductor substrate sufficient to prevent penetration of the depletion region generated by said electrode diffusion into said semiconductor substrate, an electrical conductor connected to said electrode diffusion, and means for applying a voltage to said electrical conductor.

Claim 11

In a field effect transistor having a channel length less than 0.5 microns as set forth in claim 7 wherein said voltage applying means applies a constant voltage to said electrical conductor.

Claim 12

In a field effect transistor having a channel length less than 0.5 microns as set forth in claim 7 wherein said electrode diffusion and said region are spaced apart.

Claim 13

A short channel field effect transistor comprising a semiconductor substrate having a given type dopant, a conductive gate electrode insulated from a surface of said semiconductor substrate, source and drain electrodes disposed within said semiconductor substrate at the surface thereof, said source electrode having an edge aligned with a first edge of said conductive gate electrode, said source and drain electrodes having a dopant of a type opposite to that of the given type dopant and said source electrode generating an electric field penetrating into said semiconductor substrate, a region disposed in said semiconductor substrate having the same type dopant as that of said semiconductor substrate, said region having an edge aligned along a line perpendicular to the surface of said semiconductor substrate with the first edge of said conductive gate electrode, and said region having a higher dopant concentration than that of the dopant of said semiconductor substrate sufficient to at least significantly limit the extent of the electric field penetration into said semiconductor substrate resulting from a junction located between said source electrode and said semiconductor substrate, and an electrical conductor connected to said source electrode.

Claim 14

A short channel field effect transistor comprising a semiconductor substrate having a given type dopant, a conductive gate electrode insulated from a surface of said semiconductor substrate, source and drain electrodes disposed within said semiconductor substrate at the surface thereof, said source electrode having an edge aligned with a first edge of said conductive gate electrode, said source and drain electrodes having a dopant of a type opposite to that of the given type dopant and said source electrode generating an electric field penetrating into said semiconductor substrate, a region disposed in said semiconductor substrate having the same type dopant as that of said semiconductor substrate, said region having an edge aligned along a line perpendicular to the surface of said semiconductor substrate with the first edge of said conductive gate electrode, and said region having a higher dopant concentration than that of the dopant of said semiconductor substrate sufficient to at least significantly limit the extent of the electric field penetration into said semiconductor substrate resulting from a junction located between said source electrode and said semiconductor substrate, and an electrical conductor connected to said source electrode.

Claim 15

A short channel field effect transistor as set forth in claim 10 further including means for applying a substantially constant voltage to said electrical conductor.

Claim 16

A short channel field effect transistor as set forth in claim 10 further including a channel having a length less than 0.5 microns disposed in said semiconductor substrate between said source and drain electrodes and having one end thereof aligned with the edge of said region.

Claim 17

A short channel field effect transistor comprising a semiconductor substrate having a given type dopant with a dopant concentration between 10 15 and 10 17 atoms per cubic centimeter, a conductive gate electrode insulated from a surface of said semiconductor substrate, source and drain electrodes disposed within said semiconductor substrate at the surface thereof, said source electrode having an edge aligned with a first edge of said conductive gate electrode, said source and drain electrodes having a dopant of a type opposite to that of the given type dopant and said source electrode having a dopant concentration higher than 10 19 atoms per cubic centimeter, said source electrode generating an electric field penetrating into said semiconductor substrate, a region disposed in said semiconductor substrate having the same type dopant as that of said semiconductor substrate, said region having an edge aligned along a line perpendicular to the surface of said semiconductor substrate with the first edge of said conductive gate electrode, and said region having sufficient dopant concentration between 10 17 and 10 19 atoms per cubic centimeter to at least significantly limit the extent of the electric field penetration into said semiconductor substrate resulting from a junction located between said source electrode and said semiconductor substrate, said source electrode being further disposed between said region and the surface of said semiconductor substrate, a channel having a length less than 0.5 microns disposed in said semiconductor substrate between said source and drain electrodes and having one end thereof aligned with the edge of said region, and an electrical conductor connected to said source electrode.

Claim 18

A short channel field effect transistor comprising a semiconductor substrate having a given type dopant with a dopant concentration between 10 15 and 10 17 atoms per cubic centimeter, a conductive gate electrode insulated from a surface of said semiconductor substrate, source and drain electrodes disposed within said semiconductor substrate at the surface thereof, said source electrode having an edge aligned with a first edge of said conductive gate electrode, said source and drain electrodes having a dopant of a type opposite to that of the given type dopant and said source electrode having a dopant concentration higher than 10 19 atoms per cubic centimeter, said source electrode generating an electric field penetrating into said semiconductor substrate, a region disposed in said semiconductor substrate having the same type dopant as that of said semiconductor substrate, said region having an edge aligned along a line perpendicular to the surface of said semiconductor substrate with the first edge of said conductive gate electrode, and said region having sufficient dopant concentration between 10 17 and 10 19 atoms per cubic centimeter to at least significantly limit the extent of the electric field penetration into said semiconductor substrate resulting from a junction located between said source electrode and said semiconductor substrate, said source electrode being further disposed between said region and the surface of said semiconductor substrate, a channel having a length less than 0.5 microns disposed in said semiconductor substrate between said source and drain electrodes and having one end thereof aligned with the edge of said region, and an electrical conductor connected to said source electrode.

Claim 19

A short channel field effect transistor as set forth in claim 13 wherein the peak concentration of the dopant of said region is located between 0.1 and 0.35 microns from the surface of the semiconductor substrate.

Claim 20

A short channel field effect transistor as set forth in claim 14 wherein said source electrode and said region are spaced apart.

Claim 21

A short channel field effect transistor as set forth in claim 14 wherein said channel and said drain electrode provide a drain electrode-channel interface and further including a second region having the same type dopant as that of said semiconductor substrate, an edge of said second region being aligned along a second line perpendicular to the surface of said semiconductor substrate with the drain electrode at the drain electrode-channel interface and with a second edge of said conductive gate electrode, said second region having sufficient dopant to at least significantly limit the extent of the electric field penetration resulting from the junction between said drain electrode and said semiconductor substrate and a second electrical conductor connected to said drain electrode.

Claim 22

A short channel field effect transistor as set forth in claim 16 wherein said drain electrode is spaced from said second region.