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US5346862A
Expired / Lapsed
US
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Method for the electrical insulation of a circuit function element on a semiconductor component
Assignee: Siemens AG
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Filing: 1993-05-03
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Granted: 1994-09-13
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Expires: 2013-05-03
Abstract
Abstract Method for the electrical insulation of a function element on a semiconductor component, wherein the function element is etched into a mesa (9) using a mask (8). A dielectric (10) is then applied surface-wide at least up to the height of the mesa (9). The more deeply disposed portions of this dielectric layer are covered with photoresist (11), and the photoresist (11) is caused to flow by tempering and, thus, is caused to level the surface. Finally, the photoresist (11) and the dielectric (10) are re-etched with the same etching rate until the mesa is uncovered.
Inventors
- 👤 Lothar Schleicher
- 👤 Hans-Peter Zwicknagl
- 👤 Elke Schoening
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:37
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
99 words
A method for the electrical insulation of a circuit function element on a semiconductor component, comprising the steps of: etching the circuit function element to form a mesa; applying a dielectric that completely covers the mesa surface-wide at least up to a height of the mesa; employing a mask and applying photoresist having flowability with temperature treatment onto the portions of the dielectric present at the side of the mesa; planarizing the surface of the dielectric with the flowing photoresist by heating; and etching the photoresist and the dielectric with the same etching rate until the mesa is uncovered.
Claim 2
Independent Claim
99 words
A method for the electrical insulation of a circuit function element on a semiconductor component, comprising the steps of: etching the circuit function element to form a mesa; applying a dielectric that completely covers the mesa surface-wide at least up to a height of the mesa; employing a mask and applying photoresist having flowability with temperature treatment onto the portions of the dielectric present at the side of the mesa; planarizing the surface of the dielectric with the flowing photoresist by heating; and etching the photoresist and the dielectric with the same etching rate until the mesa is uncovered.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein said function element is a transistor.
Claim 4
Dependent Claim
46 words
A method according to claim 2, wherein said step of etching the function element is further characterized by applying a mesa mask onto a top layer of the function element sized approximating the select top surface area of the mesa to be formed by the etching.
Claim 5
Dependent Claim
22 words
A method according to claim 3, comprising the further step of after the step of etching the photoresist, removing the mesa mask.
Claim 6
Dependent Claim
26 words
A method according to claim 2, wherein the dielectric is selected from the group consisting of Si 3 N 4 , SiON or SiO 2 .
Claim 7
Dependent Claim
18 words
A method according to claim 2, wherein the step of etching the photoresist is a dry etching step.
Claim 8
Dependent Claim
26 words
A method according to claim 1, wherein the dielectric is selected from the group consisting of Si 3 N 4 , SiON or SiO 2 .
Claim 9
Dependent Claim
18 words
A method according to claim 7, wherein the step of etching the photoresist is a dry etching step.
Claim 10
Dependent Claim
18 words
A method according to claim 1, wherein the step of etching the photoresist is a dry etching step.
Claim 11
Dependent Claim
49 words
A method according to claim 1, wherein said step of etching the function element is further characterized by applying a mesa mask onto a top layer of the function element said mesa mask sized approximating the select top surface area of the mesa to be formed by the etching.
Claim 12
Dependent Claim
22 words
A method according to claim 10, comprising the further step of after the step of etching the photoresist, removing the mesa mask.
Claim 13
Dependent Claim
44 words
A method according to claim 1, wherein said step of employing a mask is further characterized in that the photoresist is applied to a level approximately equal to the height of the dielectric above the mesa and not covering the dielectric above the mesa.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-12 | 1998-03-14 | 1998-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-12 | 2002-03-14 | 2002-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-12 | 2006-03-14 | 2006-09-13 | $7700.00 | Window Closed / Lapsed |