Patent US5346859A successfully refreshed from Google Patents.
US5346859A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating a full press-pack type semiconductor device
Assignee: Mitsubishi Electric Corp
•
Filing: 1993-09-24
•
Granted: 1994-09-13
•
Expires: 2013-09-24
Abstract
Abstract Coned disc springs (84, 86) lie between a gate extracting electrode (80G) held in a ringlike recess (63) of an external cathode electrode (60K) and a bottom surface of the ringlike recess (63). A semiconductor body (30) is pressed against an anode distortion buffering plate (50A) by a urging force of the coned disc springs (84, 86) for vertical positional fixation of the semiconductor body (30). This enables the semiconductor body to be prevented from damages and deformation in a full press-pack type semiconductor device.
Inventors
- 👤 Kazuhiko Niwayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:53
CPC Classifications
H; H10; H10W; H10W72/00; H10W76/00; H10W76/10; H10W76/12; H10W76/13; H10W76/138; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49169
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
359 words
A method of fabricating a semiconductor device, comprising the steps of: (a) obtaining a semiconductor body having a semiconductor substrate, a first electrode formed in a central region of a first major surface of said semiconductor substrate, and a second electrode formed on a second major surface of said semiconductor substrate; (b) obtaining a first external electrode having a base portion, a projecting portion formed integrally with said base portion, a ringlike recess formed in a region of said base portion which surrounds said projecting portion, and a contact surface defined by a front end surface of said projecting portion: (c) obtaining a second conductive external electrode; (d) obtaining an insulating casing defining a cylindrical internal space having first and second openings; (e) holding said first external electrode in said internal space of said casing in such a direction that said base portion and said projecting portion are opposed to said first and second openings, respectively, and fixing said base portion to said casing in said first opening; (f) introducing an elastic means into said internal space of said casing from said second opening to hold said elastic means in said ringlike recess; (g) inserting a ring into said internal space of said casing from said second opening to dispose said ring on said elastic means in said ringlike recess; (h) introducing a first conductive distortion buffering plate into said internal space of said casing from said second opening to superimpose said first distortion buffering plate on said contact surface of said first external electrode; (i) introducing said semiconductor body, a second conductive distortion buffering plate and said second external electrode into said internal space of said casing from said second opening, said semiconductor body, in a peripheral region of said first major surface, being superimposed on said ring, a surface of said second distortion buffering plate being superimposed on said second major surface of said semiconductor body, said second external electrode being superimposed on another surface of said second distortion buffering plate; and (j) fixing said second external electrode to said casing in said second opening while said second external electrode is pressed against said first external electrode.
Claim 2
Independent Claim
359 words
A method of fabricating a semiconductor device, comprising the steps of: (a) obtaining a semiconductor body having a semiconductor substrate, a first electrode formed in a central region of a first major surface of said semiconductor substrate, and a second electrode formed on a second major surface of said semiconductor substrate; (b) obtaining a first external electrode having a base portion, a projecting portion formed integrally with said base portion, a ringlike recess formed in a region of said base portion which surrounds said projecting portion, and a contact surface defined by a front end surface of said projecting portion: (c) obtaining a second conductive external electrode; (d) obtaining an insulating casing defining a cylindrical internal space having first and second openings; (e) holding said first external electrode in said internal space of said casing in such a direction that said base portion and said projecting portion are opposed to said first and second openings, respectively, and fixing said base portion to said casing in said first opening; (f) introducing an elastic means into said internal space of said casing from said second opening to hold said elastic means in said ringlike recess; (g) inserting a ring into said internal space of said casing from said second opening to dispose said ring on said elastic means in said ringlike recess; (h) introducing a first conductive distortion buffering plate into said internal space of said casing from said second opening to superimpose said first distortion buffering plate on said contact surface of said first external electrode; (i) introducing said semiconductor body, a second conductive distortion buffering plate and said second external electrode into said internal space of said casing from said second opening, said semiconductor body, in a peripheral region of said first major surface, being superimposed on said ring, a surface of said second distortion buffering plate being superimposed on said second major surface of said semiconductor body, said second external electrode being superimposed on another surface of said second distortion buffering plate; and (j) fixing said second external electrode to said casing in said second opening while said second external electrode is pressed against said first external electrode.
Claim 3
Dependent Claim
58 words
The method of claim 1, wherein said elastic means includes a ringlike elastic member, wherein the diameter of said second distortion buffering plate is not less than a dynamic effective diameter of said ringlike elastic member, and wherein said step (i) includes the step of (i-1) arranging said second distortion buffering plate concentrically with said ringlike elastic member.
Claim 4
Dependent Claim
112 words
The method of claim 2, wherein said semiconductor body further comprises a control electrode in said peripheral region of said first major surface of said semiconductor body; wherein said ring is composed of a conductive member, wherein there is formed a through hole in said casing, and wherein said step (g) includes the steps of: (g-1) providing said ring around said projecting portion of said first external electrode; and (g-2) inserting an insulating member between said projecting portion and said ring, said method further comprising the steps of: (k) electrically connecting one end of a control lead wire to said ring; and (l) inserting said control lead wire into said through hole.
Claim 5
Dependent Claim
32 words
The method of claim 3, wherein said step (f) includes the steps of: (f-1) obtaining a ringlike spring as said ringlike elastic member; and (f-1) holding said spring in said ringlike recess.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-12 | 1998-03-14 | 1998-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-12 | 2002-03-14 | 2002-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-12 | 2006-03-14 | 2006-09-13 | $7700.00 | Window Closed / Lapsed |