Patent US5346851A successfully refreshed from Google Patents.
US5346851A
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Method of fabricating Shannon Cell circuits
Assignee: Texas Instruments Inc
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Filing: 1992-11-20
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Granted: 1994-09-13
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Expires: 2012-11-20
Abstract
Abstract A quantum effect device implementation of the Shannon Decomposition Function in the form of a Shannon Cell is provided in which a first quantum dot logic unit (50) is coupled between the X input and the output of the Shannon Cell. A second quantum dot logic unit (52) is coupled between the Y input and the output of the Shannon Cell. The control input to the Shannon Cell is coupled to both the first and second quantum dot logic units (50 and 52) such that current flows through the appropriate quantum dot logic unit (50 or 52) depending upon the logic state of the control input.
Inventors
- 👤 John N. Randall
- 👤 Gary A. Frazier
- 👤 Rajni J. Aggarwal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:56
CPC Classifications
B; B82; B82Y; B82Y10/00; H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/05; H10W; H10W10/00; H10W10/01; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/051; Y10S148/169; Y10S438/00; Y10S438/962; Y10S977/00; Y10S977/70; Y10S977/773; Y10S977/774; Y10S977/902; Y10S977/932; Y10S977/94
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
322 words
A method of fabricating a quantum-effect implementation of Shannon Cell, comprising the steps of: providing a semiconductor substrate; forming a first barrier layer overlying the substrate; forming a quantum layer overlying the first barrier layer; forming a second barrier layer overlying the quantum layer; etching through said first and second barrier layers and said quantum layer to separate a first quantum dot logic unit area from a second quantum dot logic unit area; etching three trenches in the first quantum dot logic unit area to define a first filter quantum dot and a first control quantum dot; etching three trenches in the second quantum dot logic unit area to define a second filter quantum dot and a second control quantum dot; regrowing heterojunction tunnel barriers in the trenches; forming an X-input contact conductively coupled to the quantum well in the first quantum dot logic unit area; forming a first control contact insulatively adjacent the first control quantum dot, such that potentials placed on the first control contact align or misalign electron energy states within the first control quantum dot with electron energy states of the first filter quantum dot; forming a first output contact conductively coupled to the quantum well opposite the first filter quantum dot and the first control quantum dot from the X-input contact; forming a Y-input contact conductively coupled to the quantum well in the second quantum dot logic unit area; forming a second control contact insulatively adjacent the second control quantum dot and coupled to the first control contact, such that potentials placed on the second control contact align or misalign electron energy states within the second control quantum dot with electron energy states of the second filter quantum dot; and forming a second output contact conductively coupled to the quantum well opposite the second filter quantum dot and the second control quantum dot from the Y-input contact, the second output contact coupled to said first output contact.
Claim 2
Independent Claim
322 words
A method of fabricating a quantum-effect implementation of Shannon Cell, comprising the steps of: providing a semiconductor substrate; forming a first barrier layer overlying the substrate; forming a quantum layer overlying the first barrier layer; forming a second barrier layer overlying the quantum layer; etching through said first and second barrier layers and said quantum layer to separate a first quantum dot logic unit area from a second quantum dot logic unit area; etching three trenches in the first quantum dot logic unit area to define a first filter quantum dot and a first control quantum dot; etching three trenches in the second quantum dot logic unit area to define a second filter quantum dot and a second control quantum dot; regrowing heterojunction tunnel barriers in the trenches; forming an X-input contact conductively coupled to the quantum well in the first quantum dot logic unit area; forming a first control contact insulatively adjacent the first control quantum dot, such that potentials placed on the first control contact align or misalign electron energy states within the first control quantum dot with electron energy states of the first filter quantum dot; forming a first output contact conductively coupled to the quantum well opposite the first filter quantum dot and the first control quantum dot from the X-input contact; forming a Y-input contact conductively coupled to the quantum well in the second quantum dot logic unit area; forming a second control contact insulatively adjacent the second control quantum dot and coupled to the first control contact, such that potentials placed on the second control contact align or misalign electron energy states within the second control quantum dot with electron energy states of the second filter quantum dot; and forming a second output contact conductively coupled to the quantum well opposite the second filter quantum dot and the second control quantum dot from the Y-input contact, the second output contact coupled to said first output contact.
Claim 3
Dependent Claim
301 words
The method of claim 1, and further comprising the steps of: etching through said first and second barrier layers and said quantum layer to define a third quantum dot logic unit area and fourth quantum dot logic unit area; etching three trenches in the third quantum dot logic unit area to define a third filter quantum dot and a third control quantum dot; etching three trenches in the fourth quantum dot logic unit area to define a fourth filter quantum dot and a fourth control quantum dot; regrowing heterojunction tunnel barriers in the trenches; forming a source contact conductively coupled to the quantum well in the third quantum dot logic unit area; forming a third control contact insulatively adjacent the third control quantum dot and coupled to the first and second output contacts, such that potentials placed on the first control contact align or misalign electron energy states within the third control quantum dot with electron energy states of the third filter quantum dot; forming a first buffer output contact conductively coupled to the quantum well opposite the third filter quantum dot and the third control quantum dot from the source contact; forming a sink contact conductively coupled to the quantum well in the fourth quantum dot logic unit area; forming a fourth control contact insulatively adjacent the fourth control quantum dot and coupled to the third control contact, such that potentials placed on the fourth control contact align or misalign electron energy states within the fourth control quantum dot with electron energy states of the fourth filter quantum dot; and forming a second buffer output contact conductively coupled to the quantum well opposite the fourth filter quantum dot and the fourth control quantum dot from the sink contact, the second buffer output contact coupled to the first buffer output contact.
Claim 4
Independent Claim
225 words
A method of fabricating a quantum-effect implementation of Shannon Cell, comprising the steps of: providing a semiconductor substrate; forming a first barrier layer overlying the substrate; forming a first quantum layer overlying the first barrier layer; forming a second barrier layer overlying the first quantum layer; forming a second quantum layer overlying the second barrier layer; etching a contact opening through the first and second barrier layers and the first and second quantum layers to the semiconductor substrate; etching the second quantum layer to define an X-well and a Y-well, the X-well and Y-well having different thicknesses and spaced apart by etching through to the second barrier layer between the X-well and Y-well; forming an insulating layer overlying the X-well, the Y-well, the contact opening, and the space between the X-well and Y-well; forming a control contact conductively coupled to the semiconductor substrate at the contact opening; forming an X-input contact insulatively adjacent to the X-well; forming a Y-input contact insulatively adjacent to the Y-well; and forming an output contact conductively coupled to the first quantum layer, such that potentials placed on the control contact affect electron energy states within the first quantum layer, thereby causing alignment or misalignment with the energy states within the X-well and Y-well, such that current flows either from the X-input contact or the Y-input contact to the output contact.
Claim 5
Independent Claim
225 words
A method of fabricating a quantum-effect implementation of Shannon Cell, comprising the steps of: providing a semiconductor substrate; forming a first barrier layer overlying the substrate; forming a first quantum layer overlying the first barrier layer; forming a second barrier layer overlying the first quantum layer; forming a second quantum layer overlying the second barrier layer; etching a contact opening through the first and second barrier layers and the first and second quantum layers to the semiconductor substrate; etching the second quantum layer to define an X-well and a Y-well, the X-well and Y-well having different thicknesses and spaced apart by etching through to the second barrier layer between the X-well and Y-well; forming an insulating layer overlying the X-well, the Y-well, the contact opening, and the space between the X-well and Y-well; forming a control contact conductively coupled to the semiconductor substrate at the contact opening; forming an X-input contact insulatively adjacent to the X-well; forming a Y-input contact insulatively adjacent to the Y-well; and forming an output contact conductively coupled to the first quantum layer, such that potentials placed on the control contact affect electron energy states within the first quantum layer, thereby causing alignment or misalignment with the energy states within the X-well and Y-well, such that current flows either from the X-input contact or the Y-input contact to the output contact.
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| 3.5 Years (Year 4) | 1997-09-12 | 1998-03-14 | 1998-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-12 | 2002-03-14 | 2002-09-13 | $3760.00 | Window Closed / Lapsed |
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