Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
115 words
A method for forming an integrated circuit device, comprising the steps of: forming a gate insulating layer over a conductive layer; forming a gate electrode over the gate insulating layer; forming a source sidewall spacer and a drain sidewall spacer alongside opposite vertical edges of the gate electrode; forming a mask over a drain region in the conductive layer; implanting a relatively fast-diffusing dopant into a source region in the conductive layer; removing the mask; implanting a relatively slow-diffusing dopant into the drain region; and annealing the conductive layer causing the relatively fast-diffusing dopant and the relatively slow-diffusing dopant to diffuse into the conductive layer, producing a drain junction offset in the integrated circuit device.
Claim 2
Independent Claim
115 words
A method for forming an integrated circuit device, comprising the steps of: forming a gate insulating layer over a conductive layer; forming a gate electrode over the gate insulating layer; forming a source sidewall spacer and a drain sidewall spacer alongside opposite vertical edges of the gate electrode; forming a mask over a drain region in the conductive layer; implanting a relatively fast-diffusing dopant into a source region in the conductive layer; removing the mask; implanting a relatively slow-diffusing dopant into the drain region; and annealing the conductive layer causing the relatively fast-diffusing dopant and the relatively slow-diffusing dopant to diffuse into the conductive layer, producing a drain junction offset in the integrated circuit device.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein the conductive layer comprises monocrystalline silicon.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein the conductive layer comprises polycrystalline silicon.
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein the relatively fast-diffusing dopant comprises boron, and wherein the relatively slow-diffusing dopant comprises indium.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein the relatively fast-diffusing dopant comprises phosphorus, and wherein the relatively slow-diffusing dopant comprises arsenic.
Claim 7
Dependent Claim
20 words
The method of claim 1 wherein the relatively fast-diffusing dopant comprises phosphorus, and wherein the relatively slow-diffusing dopant comprises antimony.
Claim 8
Dependent Claim
32 words
The method of claim 1 wherein the relatively fast-diffusing dopant has an associated fast diffusion rate that is at least twice an associated slow diffusion rate associated with the relatively slow-diffusing dopant.
Claim 9
Dependent Claim
33 words
The method of claim 1 wherein the step of implanting a relatively slow-diffusing dopant into the drain region further comprises implanting a relatively slow-diffusing dopant into the drain region and the source region.
Claim 10
Dependent Claim
69 words
The method of claim 1 wherein the step of annealing the conductive layer causes the relatively fast-diffusing dopant to extend beneath the source sidewall spacer to a location approximately beneath the vertical edge of the source side of the gate electrode, and causes the relatively slow-diffusing dopant to extend beneath the drain sidewall spacer a distance that is less than approximately half the width of the drain sidewall spacer.