US5344526A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for etching diamond
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1993-09-16
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Granted: 1994-09-06
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Expires: 2013-09-16
Abstract
Abstract A diamond surface is selectively etched by forming a mask on a surface of diamond, and etching the diamond surface with a mixture of oxygen-containing gas and an inert gas, in which a concentration of oxygen in terms of O2 is from 0.01 to 20% based on the whole volume of the mixture.
Inventors
- 👤 Yoshiki Nishibayashi
- 👤 Shinichi Shikata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:25
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; B; B81; B81C; B81C1/00; B81C1/00436; B81C1/00523; B81C1/00531; C; C04; C04B; C04B41/00; C04B41/53; C04B41/5338; C04B41/5346; C04B41/80; C04B41/91; B81B; B81B2201/00; B81B2201/03; B81B2201/035; B81C2201/00; B81C2201/01; B81C2201/0101; B81C2201/0128; B81C2201/013; B81C2201/0132
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
56 words
A method for etching a diamond surface comprising steps of forming a mask on a surface of diamond, and etching the diamond surface with a mixture of oxygen-containing gas and an inert gas, wherein a concentration of oxygen in terms of O 2 is from 0.01 to 20% based on the whole volume of the mixture.
Claim 2
Independent Claim
56 words
A method for etching a diamond surface comprising steps of forming a mask on a surface of diamond, and etching the diamond surface with a mixture of oxygen-containing gas and an inert gas, wherein a concentration of oxygen in terms of O 2 is from 0.01 to 20% based on the whole volume of the mixture.
Claim 3
Dependent Claim
17 words
The method for etching a diamond surface according to claim 1, wherein said inert gas is argon.
Claim 4
Dependent Claim
36 words
The method for etching a diamond surface according to claim 1, wherein said mask is formed from aluminum, and said concentration of oxygen is from 0.1 to 20% based on the whole volume of the mixture.
Claim 5
Dependent Claim
21 words
The method for etching a diamond surface according to claim 3, wherein said concentration of oxygen is from 0.3 to 20%.
Claim 6
Dependent Claim
38 words
The method for etching a diamond surface according to claim 1, wherein said mask is formed from SiO 2 , and said concentration of oxygen is from 0.06 to 20% based on the whole volume of the mixture.
Claim 7
Dependent Claim
21 words
The method for etching a diamond surface according to claim 5, wherein said concentration of oxygen is from 0.2 to 20%.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-05 | 1998-03-07 | 1998-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-05 | 2002-03-07 | 2002-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-05 | 2006-03-07 | 2006-09-06 | $7700.00 | Window Closed / Lapsed |